Research on the Adsorption Effects of Biomass by Microstructural Characterization and Intelligent Numerical Computation Method

In this paper, sodium sulfide solution as a simulation of sulfur-containing wastewater, using orange peel as adsorbent, through the change of the absorbance of simulated wastewater to analyze the orange peel adsorbent on the treatment effect of simulated wastewater, to explore its optimal experimental conditions. The experimental results show that the adsorbent has a certain adsorption effect on the sulfur compounds in the sulfur-containing wastewater. With the change of the pH value of the adsorption environment, the adsorption rate has changed. The addition of different chemical modifiers in the water will affect the adsorption and effect of orange peel.

Модификация электронных свойств поверхности n-InP(100) сульфидными растворами

Photoluminescence and Raman spectroscopy are used to study the electronic properties of n-InP(100) surfaces passivated with different sulfide solutions. Such a passivation results in the increase in photoluminescence intensity of the semiconductor evidencing for the reduction in the surface recombination velocity. The increase in the photoluminescence intensity is accompanied by the narrowing of the surface depletion layer, as well as by the increase of the electron density in the probed volume of InP. The efficiency of electronic passivation of the n-InP(100) surface depends on the composition of the sulfide solution.

Development of Technology of Arsenic Removal from Acidic Waste Solutions in the Form of Arsenic Trisulfide

During the laboratory tests the conditions of arsenic removal from acidic waste solutions of metallurgical enterprise in the form of arsenic trisulfide were determined. The technology based on the reduction of pentavalent arsenic to trivalent state with sodium pyrosulfite solution and following arsenic trisulfide precipitation from acidic solution after treatment with sodium sulfide solution was proposed. The arsenic removal proceeds with mechanical stirring, dosing the calculated amounts of reagents and collecting emissions of hydrogen sulfide. With such treatment, about 95% of arsenic, which was in the initial solution, passes into the precipitate. An enlarged laboratory experiment was carried out and the precipitate with 42.6% of arsenic and 46.9% of sulfur was obtained. The precipitate yield was ∼25.7 kg (dry weight) out of 1 m3 of the initial arsenic containing solution. Keywords: arsenic, arsenic trisulfide, acidic waste solutions, sodium sulfide, sodium pyrosulfite

Atomic Sulfur Passivation Improves the Photoelectrochemical Performance of ZnSe Nanorods

We introduced atomic sulfur passivation to tune the surface sites of heavy metal-free ZnSe nanorods, with a Zn2+-rich termination surface, which are initially capped with organic ligands and under-coordinated with Se. The S2− ions from a sodium sulfide solution were used to partially substitute a 3-mercaptopropionic acid ligand, and to combine with under-coordinated Zn termination atoms to form a ZnS monolayer on the ZnSe surface. This treatment removed the surface traps from the ZnSe nanorods, and passivated defects formed during the previous ligand exchange process, without sacrificing the efficient hole transfer. As a result, without using any co-catalysts, the atomic sulfur passivation increased the photocurrent density of TiO2/ZnSe photoanodes from 273 to 325 μA/cm2. Notably, without using any sacrificial agents, the photocurrent density for sulfur-passivated TiO2/ZnSe nanorod-based photoanodes remained at almost 100% of its initial value after 300 s of continuous operation, while for the post-deposited ZnS passivation layer, or those based on ZnSe/ZnS core–shell nanorods, it declined by 28% and 25%, respectively. This work highlights the advantages of the proper passivation of II-VI semiconductor nanocrystals as an efficient approach to tackle the efficient charge transfer and stability of photoelectrochemical cells based thereon.

Modification of the p-GaP(001) work function by surface dipole bonds formed in sulfide solution

Sulfur treatment of p-GaP(001) surfaces increases the ionization energy and near-surface electric field due to a dipole layer consisting of gallium sulfates.