scholarly journals Proximity effect in a two-dimensional electron gas coupled to a thin superconducting layer

2018 ◽  
Vol 9 ◽  
pp. 1263-1271 ◽  
Author(s):  
Christopher Reeg ◽  
Daniel Loss ◽  
Jelena Klinovaja

There have recently been several experiments studying induced superconductivity in semiconducting two-dimensional electron gases that are strongly coupled to thin superconducting layers, as well as probing possible topological phases supporting Majorana bound states in such setups. We show that a large band shift is induced in the semiconductor by the superconductor in this geometry, thus making it challenging to realize a topological phase. Additionally, we show that while increasing the thickness of the superconducting layer reduces the magnitude of the band shift, it also leads to a more significant renormalization of the semiconducting material parameters and does not reduce the challenge of tuning into a topological phase.

1999 ◽  
Vol 595 ◽  
Author(s):  
B. Shen ◽  
T. Someya ◽  
O. Moriwaki ◽  
Y. Arakawa

AbstractPhotoluminescence (PL) of modulation-doped Al0.22Ga0.78N/GaN heterostructures was investigated. The PL peak related to recombination between the two-dimensional electron gases (2DEG) and photoexcited holes is located at 3.448 eV at 40 K, which is 45 meV below the free excitons (FE) emission in GaN. The peak can be observed at temperatures as high as 80 K. The intensity of the 2DEG PL peak is enhanced significantly by incorporating a thin Al0.12Ga0.88N layer into the GaN layer near the heterointerface to suppress the diffusion of photoexcited holes. The energy separation of the 2DEG peak and the GaN FE emission decreases with increasing temperature. Meanwhile, the 2DEG peak energy increases with increasing excitation intensity. These results are attributed to the screening effect of electrons on the bending of the conduction band at the heterointerface, which becomes stronger when temperature or excitation intensity is increased.


2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Likun Shi ◽  
Wenkai Lou ◽  
F. Cheng ◽  
Y. L. Zou ◽  
Wen Yang ◽  
...  

Abstract Based on the Born-Oppemheimer approximation, we divide the total electron Hamiltonian in a spin-orbit coupled system into the slow orbital motion and the fast interband transition processes. We find that the fast motion induces a gauge field on the slow orbital motion, perpendicular to the electron momentum, inducing a topological phase. From this general designing principle, we present a theory for generating artificial gauge field and topological phase in a conventional two-dimensional electron gas embedded in parabolically graded GaAs/In x Ga1−x As/GaAs quantum wells with antidot lattices. By tuning the etching depth and period of the antidot lattices, the band folding caused by the antidot potential leads to the formation of minibands and band inversions between neighboring subbands. The intersubband spin-orbit interaction opens considerably large nontrivial minigaps and leads to many pairs of helical edge states in these gaps.


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