High Internal Quantum Efficiency Blue Light-emitting Diodes with Triangular Shaped InGaN/GaN Multiple Quantum Wells

2013 ◽  
Vol 34 (1) ◽  
pp. 66-72
Author(s):  
赵芳 ZHAO Fang ◽  
张运炎 ZHANG Yun-yan ◽  
宋晶晶 SONG Jing-jing ◽  
丁彬彬 DING Bin-bin ◽  
范广涵 FAN Guang-han
Keyword(s):  
Quantum Wells ◽  
Blue Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting

High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes

2019 ◽  
Vol 7 (22) ◽  
pp. 6534-6538 ◽  
Author(s):  
Shanshan Chen ◽  
Chenxiao Xu ◽  
Xinhua Pan ◽  
Haiping He ◽  
Jingyun Huang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Threading Dislocations ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Dramatically reduced edge threading dislocations and a record IQE of 61% are obtained for ZnO/Zn0.9Mg0.1O MQWs by using GaN/Al2O3 as substrates.

Study on Injection Efficiency in InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes

2008 ◽  
Vol 1 ◽  
pp. 021101 ◽  
Author(s):  
Lai Wang ◽  
Jiaxing Wang ◽  
Hongtao Li ◽  
Guangyi Xi ◽  
Yang Jiang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Injection Efficiency ◽  
Light Emitting

The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells

1998 ◽  
Vol 3 ◽  
Author(s):  
A. E. Yunovich ◽  
V. E. Kudryashov ◽  
A. N. Turkin ◽  
A. Kovalev ◽  
F. Manyakhin
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Luminescence Spectra ◽  
Multiple Quantum ◽  
Tunnel Current ◽  
High Quantum Efficiency ◽  
Light Emitting ◽  
Low Probability

Luminescence spectra of Light Emitting Diodes (LEDs) with Multiple Quantum Wells (MQWs) were studied at currents J = 0.15 μA - 150 mA. A high quantum efficiency at low J is caused by a low probability of the tunnel current J (which is maximum at Jm ≈ 0.5-1.0 mA). J(V) curves were measured in the range J= 10−12-10−1 A; at J > 10−3A they may be approximated by a sum of four parts: V= φk+ mkT·[ln(J/J0)+(J/J1)0.5] + J·Rs. The part V ~ (J/J1)0.5is the evidence of a double-injection into i-layers near MQWs. Their presence is confirmed by capacitance measurements. An overflow of carriers through the MQW causes a lower quantum efficiency at high J. A model of a 2D-density of states with exponential tails fits the spectra. The value of T in the active layer was estimated. A new band was detected at high J; it can be caused by non-uniformity of In content in MQWs.

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