Simulation and Analysis of Light Extraction Efficiency of GaN-Based Flip Chip with Sidewall Roughness

2021 ◽  
Vol 58 (7) ◽  
pp. 0723001
Author(s):  
王雪 Wang Xue ◽  
崔志勇 Cui Zhiyong ◽  
王兵 Wang Bing ◽  
郭凯 Guo Kai ◽  
段瑞飞 Duan Ruifei ◽  
...  
Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 767 ◽  
Author(s):  
Hong Wang ◽  
Ming Zhong ◽  
Lijun Tan ◽  
Wei Shi ◽  
Quanbin Zhou

In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm2. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm2 and up to 285 MHz at current densities of 2000 A/cm2. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication.


Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 319 ◽  
Author(s):  
Bin Tang ◽  
Jia Miao ◽  
Yingce Liu ◽  
Hui Wan ◽  
Ning Li ◽  
...  

Current solutions for improving the light extraction efficiency of flip-chip light-emitting diodes (LEDs) mainly focus on relieving the total internal reflection at sapphire/air interface, but such methods hardly affect the epilayer mode photons. We demonstrated that the prism-structured sidewall based on tetramethylammonium hydroxide (TMAH) etching is a cost-effective solution for promoting light extraction efficiency of flip-chip mini-LEDs. The anisotropic TMAH etching created hierarchical prism structure on sidewall of mini-LEDs for coupling out photons into air without deteriorating the electrical property. Prism-structured sidewall effectively improved light output power of mini-LEDs by 10.3%, owing to the scattering out of waveguided light trapped in the gallium nitride (GaN) epilayer.


2010 ◽  
Vol 41 (1) ◽  
pp. 1490 ◽  
Author(s):  
Shiyuki Kanisawa ◽  
Hidetsugu Namiki ◽  
Hideaki Umakoshi ◽  
Hirofumi Kondo

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