Electrical Properties of Organic Light-Emitting Diodes Fabricated on HfOX-Treated Indium-Tin-Oxide Surfaces by Using an Impedance Spectroscopy Analysis

2008 ◽  
Vol 53 (6) ◽  
pp. 3296-3301
Author(s):  
Jaehyun Cho ◽  
Hyungjun Park ◽  
Hyunmin Kim ◽  
Kyungsoo Jang ◽  
Hyukjoo Sohn ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Impedance Spectroscopy ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Spectroscopy Analysis ◽  
Light Emitting ◽  
Organic Light ◽  
Impedance Spectroscopy Analysis

Fabrication and Measurement of Electroluminescence and Electrical Properties of Organic Light-Emitting Diodes Containing Mott Insulator Nanocrystals

2016 ◽  
Vol 16 (4) ◽  
pp. 3398-3401
Author(s):  
Soichiro Nozoe ◽  
Nobuaki Kinoshita ◽  
Masaki Matsuda
Keyword(s):  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Mott Insulator ◽  
Organic Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Organic Light ◽  
Short Time

By using the short-time electrocrystallization technique, phthalocyanine (Pc)-based Mott insulator Co(Pc)(CN)2·2CHCl3 nanocrystals were fabricated and applied to organic light-emiting diodes (OLEDs). The fabricated device having the configuration ITO/Co(Pc)(CN)2·2CHCl3/Alq3/Al, in which ITO is indium-tin oxide and Alq3 is tris(8-hydroxyquinolinato)aluminum, showed clear emission from Alq3, suggesting the Mott insulator Co(Pc)(CN)2·2CHCl3 can work as useful hole-injection and transport material in OLEDs.

Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes

2005 ◽  
Vol 86 (18) ◽  
pp. 183503 ◽  
Author(s):  
Han-Ki Kim ◽  
D.-G. Kim ◽  
K.-S. Lee ◽  
M.-S. Huh ◽  
S. H. Jeong ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Plasma Damage ◽  
Light Emitting ◽  
Organic Light ◽  
Oxide Cathode
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