2009 10th International Conference on Ultimate Integration of Silicon
Latest Publications

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(FIVE YEARS 0)

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(FIVE YEARS 0)

Published By IEEE

9781424437047

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

A surface field based model for ultra thin body undoped symmetric DG MOSFETs

2009 10th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2009.4897609 ◽

2009 ◽

Author(s):

Saeed Mohammadi ◽

Ali Afzali-Kusha

Keyword(s):

Thin Body ◽

Surface Field

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Electrical characteristics of atomic layer deposited aluminium oxide and lanthanum-zirconium oxide high-k Dielectric stacks

2009 10th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2009.4897573 ◽

2009 ◽

Author(s):

S. Abermann ◽

C. Henkel ◽

O. Bethge ◽

E. Bertagnolli

Keyword(s):

Zirconium Oxide ◽

Aluminium Oxide ◽

Atomic Layer ◽

Electrical Characteristics ◽

High K ◽

High K Dielectric ◽

Lanthanum Zirconium Oxide

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Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs

2009 10th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2009.4897541 ◽

2009 ◽

Cited By ~ 6

Author(s):

H. Ghoneim ◽

J. Knoch ◽

H. Riel ◽

D. Webb ◽

M.T. Bjork ◽

...

Keyword(s):

Schottky Barrier ◽

Interface Engineering ◽

Ambipolar Behavior

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Quantum compact model for ultra-narrow body FinFET

2009 10th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2009.4897593 ◽

2009 ◽

Cited By ~ 1

Author(s):

Mingchun Tang ◽

Fabien Pregaldiny ◽

Christophe Lallement ◽

Jean-Michel Sallese

Keyword(s):

Compact Model

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Sample variability and time stability in scaled silicon nanowires

2009 10th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2009.4897583 ◽

2009 ◽

Cited By ~ 1

Author(s):

M. Pierre ◽

X. Jehl ◽

R. Wacquez ◽

M. Vinet ◽

M. Sanquer ◽

...

Keyword(s):

Silicon Nanowires ◽

Time Stability

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Using low-k oxide for reduction of leakage current in Double Gate Tunnel FET

2009 10th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2009.4897595 ◽

2009 ◽

Cited By ~ 2

Author(s):

Mahdi Vadizadeh ◽

Morteza Fathipour

Keyword(s):

Leakage Current ◽

Double Gate ◽

Tunnel Fet ◽

Low K

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Characterisation of CMOS compatible vertical MOSFETs with new architectures through EKV parameter extraction and RF measurement

2009 10th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2009.4897563 ◽

2009 ◽

Author(s):

L. Tan ◽

M. M. A. Hakim ◽

S. Connor ◽

A. Bousquet ◽

W. Redman-White ◽

...

Keyword(s):

Parameter Extraction ◽

Rf Measurement ◽

Cmos Compatible ◽

Vertical Mosfets

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Study of new novel FinFET device with its bodies been connected

2009 10th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2009.4897603 ◽

2009 ◽

Author(s):

Jyi-Tsong Lin ◽

Po-Hsieh Lin ◽

Yi-Chuen Eng

Keyword(s):

New Novel

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Interface oxide trap characterisation in germanium-on-insulator 0.12 μm PMOS transistors by drain current noise measurements

2009 10th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2009.4897545 ◽

2009 ◽

Author(s):

J. Gyani ◽

S. Soliveres ◽

F. Martinez ◽

M. Valenza ◽

C. Le Royer ◽

...

Keyword(s):

Drain Current ◽

Current Noise ◽

Noise Measurements ◽

Oxide Trap

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Stable, low power and high performance SRAM based on CNFET

2009 10th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2009.4897599 ◽

2009 ◽

Cited By ~ 8

Author(s):

Mahdi Moradinasab ◽

Morteza Fathipour

Keyword(s):

Low Power ◽

High Performance

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2009 10th International Conference on Ultimate Integration of SiliconLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A surface field based model for ultra thin body undoped symmetric DG MOSFETs

Electrical characteristics of atomic layer deposited aluminium oxide and lanthanum-zirconium oxide high-k Dielectric stacks

Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs

Quantum compact model for ultra-narrow body FinFET

Sample variability and time stability in scaled silicon nanowires

Using low-k oxide for reduction of leakage current in Double Gate Tunnel FET

Characterisation of CMOS compatible vertical MOSFETs with new architectures through EKV parameter extraction and RF measurement

Study of new novel FinFET device with its bodies been connected

Interface oxide trap characterisation in germanium-on-insulator 0.12 μm PMOS transistors by drain current noise measurements

Stable, low power and high performance SRAM based on CNFET

2009 10th International Conference on Ultimate Integration of Silicon
Latest Publications