Anomalous conductance quantization observed in a quantum point contact with an asymmetric confinement potential

2012 ◽  
Vol 60 (11) ◽  
pp. 1907-1910 ◽  
Author(s):  
M. Seo ◽  
Y. Chung
Keyword(s):  
Point Contact ◽  
Quantum Point Contact ◽  
Conductance Quantization ◽  
Confinement Potential ◽  
Quantum Point

Confinement Potential in an Asymmetrically Biased Quantum Point Contact

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1329-1332 ◽  
Author(s):  
Fujio Wakaya ◽  
Junichi Takahara ◽  
Sadao Takaoka ◽  
Kazuo Murase ◽  
Kenji Gamo
Keyword(s):  
Point Contact ◽  
Quantum Point Contact ◽  
Confinement Potential ◽  
Quantum Point

scholarly journals 0.7 structure of conductance quantization in quantum point contact

2013 ◽  
Vol 62 (1) ◽  
pp. 017301
Author(s):  
Jiao Hui-Cong ◽  
An Xing-Tao ◽  
Liu Jian-Jun
Keyword(s):  
Point Contact ◽  
Quantum Point Contact ◽  
Conductance Quantization ◽  
Quantum Point ◽  
0.7 Structure

scholarly journals Conductance quantization and shot noise of a double-layer quantum point contact

2020 ◽  
Vol 101 (11) ◽  
Author(s):  
D. Terasawa ◽  
S. Norimoto ◽  
T. Arakawa ◽  
M. Ferrier ◽  
A. Fukuda ◽  
...  
Keyword(s):  
Double Layer ◽  
Shot Noise ◽  
Point Contact ◽  
Quantum Point Contact ◽  
Conductance Quantization ◽  
Quantum Point

Confinement Potential in an Asymmetrically Biased Quantum Point Contact

1995 ◽  
Author(s):  
F. Wakaya ◽  
J. Takahara ◽  
S. Takaoka ◽  
K. Murase ◽  
K. Gamo
Keyword(s):  
Point Contact ◽  
Quantum Point Contact ◽  
Confinement Potential ◽  
Quantum Point

SHOT NOISE SUPPRESSION IN QUANTUM POINT CONTACT STRUCTURES

1995 ◽  
Vol 09 (10) ◽  
pp. 573-583 ◽  
Author(s):  
L. Y. CHEN ◽  
S. C. YING
Keyword(s):  
Shot Noise ◽  
Noise Suppression ◽  
Point Contact ◽  
Channel Length ◽  
Quantum Point Contact ◽  
Recent Experimental Data ◽  
Noise Power ◽  
Conductance Quantization ◽  
Electron Wave Packet ◽  
Quantum Point

The shot noise power spectrum of a quantum point contact structure is investigated based upon a time-dependent Landauer approach. The system is modeled by an open conducting channel coupled with two infinite reservoirs. When the channel length L ≫ ξ (the coherence length of an electron wave packet), all the channel states moving from source to drain are fully occupied while all the opposite ones are empty. Consequently, shot noise is suppressed to zero along with conductance quantization. For L ~ ξ, however, while the conductance is still well quantized, the shot noise is only partially suppressed to a nonzero fraction of its full level, in agreement with recent experimental data.

Valley polarized conductance quantization in bilayer graphene narrow quantum point contact

2021 ◽  
Vol 118 (26) ◽  
pp. 263102
Author(s):  
Kohei Sakanashi ◽  
Naoto Wada ◽  
Kentaro Murase ◽  
Kenichi Oto ◽  
Gil-Ho Kim ◽  
...  
Keyword(s):  
Point Contact ◽  
Bilayer Graphene ◽  
Quantum Point Contact ◽  
Conductance Quantization ◽  
Quantum Point

scholarly journals Двухканальный электронный транспорт в подвешенных квантовых точечных контактах с боковыми затворами

2020 ◽  
Vol 54 (12) ◽  
pp. 1344
Author(s):  
Д.А. Похабов ◽  
А.Г. Погосов ◽  
Е.Ю. Жданов ◽  
А.К. Бакаров ◽  
А.А. Шкляев
Keyword(s):  
Electron Gas ◽  
Point Contact ◽  
Channel Structure ◽  
Quantum Point Contact ◽  
Dimensional Electron ◽  
Conductance Quantization ◽  
Quantum Point ◽  
Dimensional Electron Gas ◽  
Electrostatic Mechanism ◽  
Double Channel

The conductance of a suspended quantum point contact fabricated from GaAs/AlGaAs heterostructures with a two-dimensional electron gas, equipped with the in-plane side gates separated from the constriction using lithographical trenches, is studied. The conductance as a function of the gate voltages demonstrates unusual double-channel regime with independent channel’s conductance quantization: two side gates can drive the conductance of the separate channels independently. A possible electrostatic mechanism of the double-channel structure formation inside a single constriction is connected with the lateral redistribution of the low-mobility X-valley electrons contained in superlattice layers, resulting in the emergence of the potential barrier in the middle of quantum point contact, separating the conducting electrons into two channels, symmetrically shifted towards the lithographical trenches, defining the nanostructure geometry.

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