Detrital and Diagenetic Illite Identified from Crystallite Thickness Measurements - A Tool for Paleo-temperature Estimate

Author(s):  
L. Aldega ◽  
S. Corrado
Author(s):  
C. W. Price ◽  
E. F. Lindsey

Thickness measurements of thin films are performed by both energy-dispersive x-ray spectroscopy (EDS) and x-ray fluorescence (XRF). XRF can measure thicker films than EDS, and XRF measurements also have somewhat greater precision than EDS measurements. However, small components with curved or irregular shapes that are used for various applications in the the Inertial Confinement Fusion program at LLNL present geometrical problems that are not conducive to XRF analyses but may have only a minimal effect on EDS analyses. This work describes the development of an EDS technique to measure the thickness of electroless nickel deposits on gold substrates. Although elaborate correction techniques have been developed for thin-film measurements by x-ray analysis, the thickness of electroless nickel films can be dependent on the plating bath used. Therefore, standard calibration curves were established by correlating EDS data with thickness measurements that were obtained by contact profilometry.


1984 ◽  
Vol 45 (C2) ◽  
pp. C2-33-C2-36 ◽  
Author(s):  
D. A. Sewell ◽  
I. D. Hall ◽  
G. Love ◽  
J. P. Partridge ◽  
V. D. Scott

2011 ◽  
pp. 107-114
Author(s):  
B. Lacroix ◽  
T. Martella ◽  
M. Pras ◽  
M. Masson-Fauchier ◽  
L. Fayette

Author(s):  
R.K. Jain ◽  
T. Malik ◽  
T.R. Lundquist ◽  
C.-C. Tsao ◽  
W.J. Walecki

Abstract Novel Fabry Perot [1] fringe analysis techniques for monitoring the etching process with a coaxial photon-ion column [2] in the Credence OptiFIB are reported. Presently the primary application of these techniques in circuit edit is in trenching either from the front side or from the backside of a device. Optical fringes are observed in reflection geometry through the imaging system when the trench floor is thin and semi-transparent. The observed fringes result from optical interference in the etalon formed between the trench floor (Si in the case of backside trenching) and the circuitry layer beyond the trench floor. In-situ real-time thickness measurements and slope correction techniques are proposed that improve endpoint detection and control planarity of the trench floor. For successful through silicon edits, reliable endpoint detection and co-planarity of a local trench is important. Reliable endpoint detection prevents milling through bulk silicon and damaging active circuitry. Uneven trench floor thickness results in premature endpoint detection with sufficient thickness remaining in only part of the trench area. Good co-planarity of the trench floor also minimizes variability in the aspect ratios of the edit holes, hence increasing success rates in circuit edit.


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