Experimental Study on Cryogenic Polishing Single Silicon Wafer with Nano-Sized Cerium Dioxide Powders

Cryogenic polishing single silicon wafer with nano-sized CeO2 abrasives can be known as cryogenic fixed abrasives CMP (CFA-CMP). The abrasive slurry was made of nano-sized CeO2 particles dispersed in de-ionized water with a surfactant and the polishing slurry froze to form cryogenic polishing pad. Then the polishing tests of the blanket silicon wafers in the presence of the cryogenic polishing pad containing the nano-particulates were carried out. The morphologies and surfaces roughness of the polished silicon wafers were observed and examined on an atomic force microscope (AFM). The results show that a super smooth surface with roughness of 0. 293 nm is obtained within 5000 nm× 5000 nm and the removal of material is dominated by plastic flowage.

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Experimental study on scan imaging of silicon wafer by laser-induced photocarrier radiometry

Acta Physica Sinica ◽

10.7498/aps.64.087804 ◽

2015 ◽

Vol 64 (8) ◽

pp. 087804

Author(s):

Liu Jun-Yan ◽

Song Peng ◽

Qin Lei ◽

Wang Fei ◽

Wang Yang

Keyword(s):

Experimental Study ◽

Silicon Wafer ◽

Photocarrier Radiometry

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Ultrasonic Welding of Aluminum and Silicon Wafer

Materials Science Forum ◽

10.4028/www.scientific.net/msf.505-507.841 ◽

2006 ◽

Vol 505-507 ◽

pp. 841-846

Author(s):

Kuen Ming Shu ◽

Hung Rung Shih

Keyword(s):

Experimental Study ◽

Silicon Wafer ◽

Ultrasonic Welding ◽

Vacuum Deposition ◽

Aluminum Wire ◽

Welding Condition ◽

Microstructure Observation ◽

Deposit Surface ◽

Welding Processes ◽

Welding Force

There are several types of welding method to join metal and ceramic. This paper gives a description of an experimental study of the ultrasonic welding of aluminum wire and silicon wafer under the conditions of the frequency of ultrasonic vibration f = 38000Hz, the applied duration T=0.2-1.5 sec, and the welding force Ps =40-140 gf. In this study, vacuum deposition was first applied to deposit surface modification aluminum on silicon wafer, then ultrasonic welding processes were investigated to join aluminum wire and modified silicon wafer. Based on the results of the microstructure observation and tensile test, it is believed that the joining ability can be improved under optimum welding condition.

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Numerical-experimental study on polishing of silicon wafer using magnetic abrasive finishing process

Wear ◽

10.1016/j.wear.2019.02.007 ◽

2019 ◽

Vol 424-425 ◽

pp. 143-150 ◽

Cited By ~ 7

Author(s):

Mohammad Mosavat ◽

Abdolreza Rahimi

Keyword(s):

Experimental Study ◽

Silicon Wafer ◽

Magnetic Abrasive Finishing ◽

Finishing Process ◽

Abrasive Finishing

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Experimental Study on Temperature during Wire Saw Slicing

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.481.153 ◽

2013 ◽

Vol 481 ◽

pp. 153-157

Author(s):

Chun Yan Yao ◽

Zong Hua Xu ◽

Wei Zhang ◽

Qiao Fang Zhang ◽

Wei Peng

Keyword(s):

Experimental Study ◽

Silicon Wafer ◽

Silicon Wafers ◽

Silicon Ingot ◽

Maximum Value ◽

Wire Saw ◽

The Wire ◽

Fixed Abrasive Wire Saw ◽

Fixed Abrasive

Heat generated during wire saw slicing can cause silicon temperature raise and make silicon wafer warpage, especially for larger silicon wafers. In order to study the wire saw effect on silicon temperature during slicing process, three kinds of wire saw, mainly semi-fixed abrasive wire saw and traditional wire saw, are applied for slicing silicon ingot. In this paper, the thermocouple is used to measure the temperature of the silicon during wire saw slicing. The experiment results show that the temperature of the silicon increases along with the wire saw working direction and reaches maximum value near the outlet position of silicon. The temperature of the silicon sliced by semi-fixed abrasive wire saw is lower than that sliced by traditional wire saw.

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