Bridge Action of Double-Deck Films Interface Electrons

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.217-219.1038 ◽

2012 ◽

Vol 217-219 ◽

pp. 1038-1042

Author(s):

Zhi Guo Zhang

Keyword(s):

Short Circuit ◽

Sno2 Film ◽

Boundary Scattering ◽

Film Resistance ◽

Crystal Boundary ◽

Ito Film

When both SnO2 film and a-Si film with infinite square resistance are deposited on an ITO film, the square resistance of the ITO film notably decreases. This phenomenon is more remarkable, when an ITO film has large square resistance. We believe that the films are composed of spaced crystalline grains. The film resistance is due to crystal boundary scattering carriers. Smaller crystalline grain and greater distance to the crystal boundary lead to fiercer scattering. The crystalline grains of the SnO2 film and a-Si film short-circuit the spaced ITO grains to form bridges so interface electrons can flow trough.

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Studies on Nanostructure ITO Thin Films on Silicon Solar Cells

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.678.365 ◽

2013 ◽

Vol 678 ◽

pp. 365-368

Author(s):

Rangasamy Balasundraprabhu ◽

E.V. Monakhov ◽

N. Muthukumarasamy ◽

B.G. Svensson

Keyword(s):

Thin Films ◽

Solar Cells ◽

Solar Cell ◽

Short Circuit ◽

Silicon Solar Cells ◽

Shunt Resistance ◽

Cell Parameters ◽

Ito Film ◽

Ito Thin Films ◽

Ito Films

Nanostructure ITO thin films have been deposited on well cleaned glass and silicon substrates using dc magnetron sputtering technique. The ITO films are post annealed in air using a normal heater setup in the temperature range 100 - 400 °C. The ITO film annealed at 300°C exhibited optimum transparency and resistivity values for device applications. The thickness of the ITO thin films is determined using DEKTAK stylus profilometer. The sheet resistance and resistivity of the ITO films were determined using four probe technique. Finally, the optimized nanostructure ITO layers are incorporated on silicon solar cells and the efficiency of the solar cell are found to be in the range 12-14%. Other solar cell parameters such as fill factor(FF), open circuit voltage(Voc),Short circuit current(Isc), series resistance(Rs) and shunt resistance(Rsh) have been determined. The effect of ITO film thickness on silicon solar cells is also observed.

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Structural Imperfections in thin Oxide Films Formed on Some Fe- and Ni-Base Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069545 ◽

1970 ◽

Vol 28 ◽

pp. 510-511

Author(s):

L. P. Lemaire ◽

D. E. Fornwalt ◽

F. S. Pettit ◽

B. H. Kear

Keyword(s):

Oxide Scale ◽

Oxidation Process ◽

Short Circuit ◽

Protective Oxide ◽

Protective Oxide Scale ◽

Thin Oxide Films ◽

Diffusion Paths ◽

Oxidation Resistant ◽

Structural Imperfections ◽

Short Circuit Diffusion

Oxidation resistant alloys depend on the formation of a continuous layer of protective oxide scale during the oxidation process. The initial stages of oxidation of multi-component alloys can be quite complex, since numerous metal oxides can be formed. For oxidation resistance, the composition is adjusted so that selective oxidation occurs of that element whose oxide affords the most protection. Ideally, the protective oxide scale should be i) structurally perfect, so as to avoid short-circuit diffusion paths, and ii) strongly adherent to the alloy substrate, which minimizes spalling in response to thermal cycling. Small concentrations (∼ 0.1%) of certain reactive elements, such as yttrium, markedly improve the adherence of oxide scales in many alloy systems.

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