short circuit diffusion
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2020 ◽  
Vol 508 ◽  
pp. 145254 ◽  
Author(s):  
Aleksandr V. Druzhinin ◽  
Bastian Rheingans ◽  
Sebastian Siol ◽  
Boris B. Straumal ◽  
Jolanta Janczak-Rusch ◽  
...  

Metals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1345 ◽  
Author(s):  
M.E. Kassner ◽  
R. Ermagan

New analysis provides insight into the basis of power-law breakdown (PLB) in the steady-state creep of metals and alloys. A variety of theories has been presented in the past but this new examination suggests that there is evidence that a dramatic supersaturation of vacancies leading to very high diffusion rates and enhanced dislocation climb is associated with the rate-controlling process for creep in PLB. The effect of vacancy supersaturation may be enhanced by dislocation short circuit diffusion paths at lower temperatures due to the dramatic increase in dislocation density.


2019 ◽  
Vol 99 (20) ◽  
Author(s):  
A. Tiwari ◽  
M. K. Tiwari ◽  
M. Gupta ◽  
H.-C. Wille ◽  
A. Gupta

CORROSION ◽  
10.5006/2802 ◽  
2018 ◽  
Vol 74 (9) ◽  
pp. 984-1000 ◽  
Author(s):  
Esmaeil Sadeghi ◽  
Nicolaie Markocsan ◽  
Tanvir Hussain ◽  
Matti Huhtakangas ◽  
Shrikant Joshi

NiCrMo coatings with and without dispersed SiO2 were deposited using high-velocity air-fuel technique. Thermogravimetric experiments were conducted in 5% O2 + 500 vppm HCl + N2 with and without a KCl deposit at 600°C for up to 168 h. The SiO2-containing coating showed lower weight change as a result of formation of a protective and adherent Cr-rich oxide scale. SiO2 decelerated short-circuit diffusion of Cr3+ through scale’s defects, e.g., vacancies, and promoted the selective oxidation of Cr to form the protective Cr-rich oxide scale. Furthermore, the presence of SiO2 led to less subsurface depletion of Cr in the coating, and accordingly less corrosion of the substrate. The formed corrosion product on the SiO2-free coating was highly porous, non-adherent, and thick.


2016 ◽  
Author(s):  
M. Kizilyalli ◽  
J. Corish ◽  
R. Metselaar

2015 ◽  
Vol 82 ◽  
pp. 145-154 ◽  
Author(s):  
S. Baylan ◽  
G. Richter ◽  
M. Beregovsky ◽  
D. Amram ◽  
E. Rabkin

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