Electrical Properties of Bi(In,Ga,Sc)O3-PbTiO3 Piezoelectric Ceramics
The gallium and indium double-modified bismuth scandate-lead titanate (1-x)Bi (In0.20Ga0.05Sc0.75)O3-xPbTiO3((1-x)BIGS-xPT,x=0.55-0.70) ceramics were prepared by using conventional ceramic technique. (1-x)BIGS-xPT ceramics for nearx=0.60 exhibits an evident enhancement in room temperature dielectric and piezoelectric properties, with dielectric constantε, piezoelectric constantd33, planar electromechanical coupling coefficientkpand Curie temperatureTCof 1100, 295 pC/N, 0.43 and 435 °C, respectively. TheTCof (1-x)BIGS-xPT is in the range of 425-530 °C for the compositions investigated. The combination of highTCand excellent piezoelectric activity suggest that the (1-x)BIGS-xPT ceramics are usable candidate materials for high temperature piezoelectric devices applications.