Researching Influence of IBAD PLD Parameters on Properties of Nanocrystalline ZnO Thin Films

Nanocrystalline ZnO thin films were manufactured by Ion Beam Assisted Pulsed Laser Deposition (IBAD PLD). The influence of technological parameters and parameters of ion assisted deposition on structural, morphological and electrical parameters of ZnO thin films were researched in the experiments. As a result it was determined that changes in the basic technological parameters of IBAD PLD (target-substrate distance, substrate temperature, energy density of the laser pulses, annealing temperature, Ar flow) are able to change properties of the thin films significant, including surface roughness in the range from 0.75±0.20 nm to 7.8±2.2 nm, resistivity in the range from 10-3 Ohm cm to 104 Ohm cm. The possibility of controlling the morphological and physical properties of ZnO nanocrystalline films obtained in the experiments has been shown.

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A Study on the Process of ZnO Thin Films Prepared by Ion Beam Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.233-235.2399 ◽

2011 ◽

Vol 233-235 ◽

pp. 2399-2402 ◽

Cited By ~ 2

Author(s):

Shen Jiang Wu ◽

Wei Shi ◽

Jun Hong Su ◽

Wen Qi Wang

Keyword(s):

Thin Films ◽

Orthogonal Experiment ◽

Ion Beam ◽

Experimental Result ◽

Zno Thin Films ◽

Ion Beam Sputtering ◽

Technological Parameters ◽

Sputtering Deposition ◽

Beam Sputtering ◽

Deposition Technology

Based on the ion beam sputtering deposition technology, we adopted the reactive sputtering deposition method to accomplish the coating on the glass substrata with ZnO thin films. We used the four-factor and three-level L9(34) orthogonal experiment to obtain the best technological parameters of deposited ZnO thin films: discharge voltage 3.5KV, oxygen current capacity 8SCCM, the coil current 8A, the distance between target and substrata 140mm. The purity of the deposited ZnO thin film is 85.77%, and it has the good crystallization in orientation. The experimental results show that research and development of the ion beam sputtering source is advanced and has a good application value, and the ion beam sputtering deposition technology can be used to deposit the preferred orientation thin films with good performance. The findings have provided the experimental result and the beneficial reference for the ion beam sputtering deposition research.

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A STUDY ON STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF ZnO FILM PREPARED BY PULSED LASER DEPOSITION ON Si(111) SUBSTRATES

International Journal of Modern Physics B ◽

10.1142/s0217979207037016 ◽

2007 ◽

Vol 21 (10) ◽

pp. 1775-1785 ◽

Cited By ~ 3

Author(s):

XIAN-QI WEI ◽

BAO-YUAN MAN ◽

YU-TAI WANG ◽

HUI-ZHAO ZHUANG

Keyword(s):

Thin Films ◽

Ir Spectra ◽

Pulsed Laser Deposition ◽

Annealing Temperature ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Zno Film ◽

Post Annealing ◽

Structural And Optoelectronic Properties

Zinc oxide (ZnO) thin films grown on Si (111) substrates by pulsed laser deposition at O 2 ambient pressure of 1.3 Pa at different deposition temperatures have been studied. ZnO thin films underwent annealing treatment after deposition. The structural and optoelectronic properties of deposited and annealed thin films have been characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), infrared absorption (IR) spectra, four-probe measurements and photoluminescence (PL) spectra. The XRD observation shows that the best crystalline quality of ZnO thin films with hexagonal structure are those grown at a temperature of 400°C and annealed at a temperature of 600°C, respectively. AFM results show that the surface roughness of the ZnO films can be decreased with increasing annealing temperature up to 600°C and then increased by further increasing the annealing temperature. The intense absorption peak sited at 417.54 cm-1 has been observed by IR spectra for ZnO film grown at 400°C and annealed at 600°C, and the property of absorption is improved by post-annealing. ZnO film grown at 400°C with a resistivity of 12.3 Ω· cm shows the best n-type semiconductor property. The PL spectra show the dominant increase in UV emission by annealing. It is concluded that the best post-annealing temperature is about 600°C.

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INFLUENCE OF POST ANNEALING ON SOL–GEL DEPOSITED ZnO THIN FILMS

Surface Review and Letters ◽

10.1142/s0218625x14500462 ◽

2014 ◽

Vol 21 (04) ◽

pp. 1450046 ◽

Cited By ~ 1

Author(s):

HEMALATA BHADANE ◽

EDMUND SAMUEL ◽

DINESH KUMAR GAUTAM

Keyword(s):

Thin Films ◽

Annealing Temperature ◽

Sol Gel ◽

Visible Region ◽

Average Crystallite Size ◽

Zno Thin Films ◽

Nanocrystalline Films ◽

Post Annealing ◽

Deposited Films ◽

Lower Resistivity

The effect of annealing temperature on sol–gel deposited ZnO thin films have been studied. The average crystallite size determined from XRD shows that the deposited films are nanocrystalline. FTIR confirms deposition of ZnO thin films. The transmittance of annealed ZnO thin films is greater than 80% in visible region with bandgap ranging from 3.25–3.19 eV. The films annealed at 450°C temperature shows lower resistivity value of 527.241 Ωm. The deposited nanocrystalline films are suitable for biosensing applications due to its higher surface area.

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Effect of different annealing temperature on Sb-doped ZnO thin films prepared by pulsed laser deposition on sapphire substrates

Applied Surface Science ◽

10.1016/j.apsusc.2011.01.037 ◽

2011 ◽

Vol 257 (11) ◽

pp. 5121-5124 ◽

Cited By ~ 9

Author(s):

Ziwen Zhao ◽

Lizhong Hu ◽

Heqiu Zhang ◽

Jingchang Sun ◽

Jiming Bian ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Annealing Temperature ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Sapphire Substrates ◽

Doped Zno

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Influence of annealing temperature on ZnO thin films grown by dual ion beam sputtering

Bulletin of Materials Science ◽

10.1007/s12034-014-0035-0 ◽

2014 ◽

Vol 37 (5) ◽

pp. 983-989 ◽

Cited By ~ 15

Author(s):

Sushil Kumar Pandey ◽

Saurabh Kumar Pandey ◽

Vishnu Awasthi ◽

Ashish Kumar ◽

Uday P. Deshpande ◽

...

Keyword(s):

Thin Films ◽

Annealing Temperature ◽

Ion Beam ◽

Zno Thin Films ◽

Ion Beam Sputtering ◽

Beam Sputtering ◽

Dual Ion Beam Sputtering

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Research of Influence Thickness of Nanocrystalline VOx Films on their Electrical Properties

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.475-476.1266 ◽

2013 ◽

Vol 475-476 ◽

pp. 1266-1269

Author(s):

Oleg Alekseevich Ageev ◽

Evgeny Yurievich Gusev ◽

Evgeny Gennad’evich Zamburg ◽

Alexsander Valer’evich Michailichenko ◽

Vladislav Anatolyevich Gamaleev ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Physical Properties ◽

Pulsed Laser Deposition ◽

Deposition Time ◽

Pulsed Laser ◽

Laser Deposition ◽

Nanocrystalline Films ◽

Electrical Parameters ◽

Time Lead

Nanocrystalline VOx thin films were manufactured by using pulsed laser deposition. The influence of deposition time on electrical parameters of VOx thin films were researched. It was determined that changes in deposition time lead to significant changes in properties of thin films, including resistivity in the range from 5 Ohm·cm to 70 Ohm·cm. The possibility of controlling physical properties of VOx nanocrystalline films obtained in the experiments has been shown.

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