scholarly journals 28 GHz Off-the-Shelf Low Noise Amplifier for 5G Baseband Wireless System

2020 ◽  
Vol 9 (3) ◽  
pp. 3051-3058
Keyword(s):  
Return Loss ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Common Source ◽  
Power Gain ◽  
Wireless System ◽  
Simulation Process ◽  
Input And Output ◽  
Receiver System ◽  
Noise Amplifier

This paper presents the simulation and measured results of a Low Noise Amplifier (LNA) working at 28 GHz for the 5G wireless system. LNA is used to amplify the weak receiving signals in the RF receiver system. The 28 GHz (Ka-band) LNA is designed to work for 5G technology wireless system. Here a Fujitsu FHR02X transistor is used in the simulation process, where the one-stage LNA is adopting a common-source with source inductive degenerative topology.In the fabrication process, GaAs pHEMT MMIC HMC519LC4 LNA is mounted on the Rogers 4003C board (εr = 3.38 and δ = 0.0027)and tested using (PNA-X N5246A) Microwave Network Analyzer. The final LNA design in the simulation process achieves a power gain of 9.185 dB, input and output return losses of – 13.124 dB and – 15.455 dB respectively, and noise figure of 9.185 dB. Furthermore, the fabricated LNA achieves a power gain of 10.91 dB, input and output return losses of - 7.75 dB and - 22.13 dB respectively. Although the return loss (S11) value is higher than -10 dB, but the LNA still able to obtain gain more than 10 dB.Thesimulation and fabricated LNA have input return loss quite closed to the given value in the datasheet. Thus, the LNA transmission line has a good output matching design.

Design of a 2-Stage Broadband Low Noise Amplifier Based on the Agilent ADS

2015 ◽  
Vol 719-720 ◽  
pp. 862-868
Author(s):  
Yan Fen Chen ◽  
Fu Hong Zhang
Keyword(s):  
Standing Wave ◽  
High Performance ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Small Signal ◽  
Power Gain ◽  
Input And Output ◽  
Signal Simulation ◽  
Simulation Results ◽  
Noise Amplifier

The noise coefficient and the power gain of a low noise amplifier affect the whole performance of the receiver. This paper presents the design and simulation of 2-stage low noise amplifier using the MGA633P8 and TQP3M9028’s S parameters to set S2P files. Not only analyze how to insert elements to match a broadband circuit, but also make some optimization by using the Agilent ADS in the case of small signal. Simulation results show that the proposed work implements a high performance of 2-stage low noise amplifier which works at 824 MHZ to 1980 MHZ, the gain is greater than 25 db, the noise coefficient is less than 0.6, input and output standing wave ratio (SWR) are both less than 1.3.

scholarly journals Design And Analysis Of CMOS Low Noise Amplifier Circuit For 5-GHz Cascode and Folded Cascode In 180nm Technology

2018 ◽  
Vol 7 (3) ◽  
pp. 143
Author(s):  
T. Kanthi ◽  
D. Sharath Babu Rao
Keyword(s):  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Common Source ◽  
Power Gain ◽  
Amplifier Circuit ◽  
Folded Cascode ◽  
Noise Amplifier ◽  
5 Ghz

This paper is about Low noise amplifier topologies based on 0.18µm CMOS technology. A common source stage with inductive degeneration, cascode stage and folded cascode stage is designed, simulated and the performance has been analyzed. The LNA’s are designed in 5GHz. The LNA of cascode stage of noise figure (NF) 2.044dB and power gain 4.347 is achieved. The simulations are done in cadence virtuoso spectre RF.

scholarly journals Design And Analysis Of CMOS Low Noise Amplifier Circuit For 5-GHz Cascode and Folded Cascode In 180nm Technology

2018 ◽  
Vol 7 (3) ◽  
pp. 149
Author(s):  
T. Kanthi ◽  
D. Sharath Babu Rao
Keyword(s):  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Common Source ◽  
Power Gain ◽  
Amplifier Circuit ◽  
Folded Cascode ◽  
Noise Amplifier ◽  
5 Ghz

This paper is about Low noise amplifier topologies based on 0.18µm CMOS technology. A common source stage with inductive degeneration, cascode stage and folded cascode stage is designed, simulated and the performance has been analyzed. The LNA’s are designed in 5GHz. The LNA of cascode stage of noise figure (NF) 2.044dB and power gain 4.347 is achieved. The simulations are done in cadence virtuoso spectre RF.

scholarly journals A Low-Noise Amplifier Utilizing Current-Reuse Technique and Active Shunt Feedback for MedRadio Band Applications

2020 ◽  
pp. 306-316
Author(s):  
Mutanizam Abdul Mubin ◽  
◽  
Arjuna Marzuki
Keyword(s):  
Low Power ◽  
Return Loss ◽  
Noise Figure ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Common Source ◽  
Cmos Process ◽  
Current Reuse ◽  
Noise Amplifier

In this work, a low-power 0.18-μm CMOS low-noise amplifier (LNA) for MedRadio applications has been designed and verified. Cadence IC5 software with Silterra’s C18G CMOS Process Design Kit were used for all design and simulation work. This LNA utilizes complementary common-source current-reuse topology and subthreshold biasing to achieve low-power operation with simultaneous high gain and low noise figure. An active shunt feedback circuit is used as input matching network to provide a suitable input return loss. For test and measurement purpose, an output buffer was designed and integrated with this LNA. Inductorless design approach of this LNA, together with the use of MOSCAPs as capacitors, help to minimize the die size. On post-layout simulations with LNA die area of 0.06 mm2 and simulated total DC power consumption of 0.5 mW, all targeted specifications are met. The simulated gain, input return loss and noise figure of this LNA are 16.3 dB, 10.1 dB and 4.9 dB respectively throughout the MedRadio frequency range. For linearity, the simulated input-referred P1dB of this LNA is -26.7 dBm while its simulated IIP3 is -18.6 dBm. Overall, the post-layout simulated performance of this proposed LNA is fairly comparable to some current state-of-the-art LNAs for MedRadio applications. The small die area of this proposed LNA is a significant improvement in comparison to those of the previously reported MedRadio LNAs.

An Ultra-Wideband 0.1–6.1 GHz Low Noise Amplifier in 180 nm CMOS Technology

2020 ◽  
pp. 2150104
Author(s):  
Farshad Shirani Bidabadi ◽  
Sayed Vahid Mir-moghtadaei
Keyword(s):  
Power Consumption ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Common Source ◽  
Power Gain ◽  
Noise Cancelling ◽  
Resistive Feedback ◽  
Noise Amplifier

In this paper, an Ultra-Wideband (UWB) low noise amplifier (LNA) with low power consumption and high-power gain in 180[Formula: see text]nm CMOS technology is presented. An innovative combination of conventional methods to design UWB-LNA, i.e., resistive-feedback, inductive-series peaking, noise cancelling and inductive degeneration techniques is described here. The proposed LNA consists of two common source amplifiers with resistive feedback in which the noise and power consumption have been reduced by using the noise cancelling and current reuse techniques, respectively. Also, resistive feedback in the first stage reduces input resistance, hereby improving input impedance matching. In the second stage, which is used to increase the power gain, a common source structure with inductive-series peaking and noise cancellation techniques is used. The analytical results agree well with the post layout simulation results. The post-layout simulation shows a gain of [Formula: see text][Formula: see text]dB and noise figure (NF) of 2.3[Formula: see text]dB in the whole [Formula: see text][Formula: see text]dB bandwidth of 0.1[Formula: see text]GHz to 6.1[Formula: see text]GHz, while the S11 and S22 are less than [Formula: see text][Formula: see text]dB. The proposed circuit has a figure of merit of 9.9 which is significantly improved compared to the previous works. The total power dissipation is only 7.3[Formula: see text]mW, and the active area is less than 0.7[Formula: see text]mm2.

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