Study on Characteristic of Abrasives in Chemical Mechanical Polishing of Silicon Wafer

2010 ◽  
Vol 102-104 ◽  
pp. 658-662 ◽  
Author(s):  
Jian Xiu Su ◽  
Xi Qu Chen ◽  
Jia Xi Du ◽  
Xiu Ying Wan ◽  
Xin Ning
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Action ◽  
Mechanical Polishing ◽  
Test Results ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Chemical Action ◽  
Polishing Pad ◽  
Reliable Basis

In order to understand the material removal mechanism in the process of chemical mechanical polishing (CMP), the states of abrasives in the slurry and on the polishing pad in CMP process have been studied by testing. It was concluded that although the abrasive in the slurry is in the form of agglomeration, but the abrasive on the polishing pad are in approximately uniform layer distribution. The different CMP slurries had been designed for CMP test of MRR. According to analyzing the test results, it was concluded that the mechanical action produced by the abrasive is the main mechanical action in wafer CMP process and the MRR mainly results from the interaction between the mechanical action of the abrasives and the chemical action of slurry. These results will provide a reliable basis for the building of abrasive trajectory model and a theoretical guide to further understanding the material removal mechanism in wafer CMP.

An Analyzing on Material Removal Mechanism in Chemical Mechanical Polishing of Cu

2009 ◽  
Vol 416 ◽  
pp. 354-359
Author(s):  
Jian Xiu Su ◽  
Yin Xia Zhang ◽  
Xi Qu Chen ◽  
Bin Feng Yang ◽  
Dong Ming Guo
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Corrosive Wear ◽  
Mechanical Action ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Chemical Action ◽  
Optimum Velocity

The components of material removal in wafer Chemical mechanical polishing (CMP) was described qualitatively based on theory of corrosive wear. The value of each component was obtained by a series of wafer CMP experiments. According to analyzing the experiment results, some conclusions are obtained as follows. There is an optimum polish velocity in wafer CMP at a certain parameter. Under the optimum velocity, the balance of interaction between the mechanical action and the chemical action is reached and the material removal rate approaches maximum. The wafer CMP is a changeful and dynamic process. It cannot be obtained ideal effect of material removal by increasing the mechanical action or chemical action only. The MRR in wafer CMP mainly depends on the interaction result between the mechanical action and the chemical action and the interaction made by abrasives is a decisive part. These results provide a theoretical guide to further understanding the material removal mechanism in wafer CMP.

Study on Chemical Mechanical Polishing Mechanism of LiTaO3 Wafer

2006 ◽  
Vol 304-305 ◽  
pp. 310-314
Author(s):  
Xin Wei ◽  
Hui Yuan ◽  
H.W. Du ◽  
Wei Xiong ◽  
Rui Wei Huang
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Acoustic Signals ◽  
Mechanical Action ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Mechanical Loads ◽  
Crystal Wafer

In this paper, the scratching processes by a diamond indentor under the loads linearly increased from zero were studied to assess the mechanical behavior of LiTaO3 crystal wafer. Material removal mechanism of LiTaO3 crystal by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of LiTaO3 wafers. The chemical mechanical polishing (CMP) processes of LiTaO3 wafers were analyzed in detail according to the observation and measurement of the polished surfaces of LiTaO3 wafers with SEM and XRD. The research results show that there exist four regimes along the scratched groove with the increasing of down force in a scratching process of LiTaO3 crystal wafer, and the critical load for each regime is affected by the loading speed and final load, etc. When H2O2 and KOH are added into the polishing slurry, the material of LiTaO3 wafer is removed by chemical reaction and mechanical action sequentially in the CMP processes, and the material removal rate increases while the surface roughness is improved.

Analysis on Contact Forms of Interface in Wafer CMP Based on Lubricating Behavior

2011 ◽  
Vol 704-705 ◽  
pp. 313-317
Author(s):  
Sheng Fang Zhang ◽  
Jian Xiu Su ◽  
Jia Xi Du ◽  
Ren Ke Kang
Keyword(s):  
Boundary Lubrication ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Test Results ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Lubricating Film ◽  
Stribeck Curves

Chemical mechanical polishing (CMP) has become the most widely used planarization technology in the semiconductor manufacturing process. In this paper, the distinguish method of lubricating behavior in wafer CMP had been analyzed in theory firstly. Then, the tests of wafer CMP with silicon wafer and deposited copper wafer at different polishing pressure had been done. By the test results, the Stribeck curves obtained showed obvious smooth. But in normal wafer CMP conditions, the friction coefficient of polishing area was above 0.1. By analyzing the experimental results, it was concluded that the lubrication state in CMP interface is belong to the boundary lubrication and the material removal is the process of bringing and removed of the chemical reaction boundary lubricating film on wafer surface constantly. The contact form between the Wafer and the polishing pad is the solid-solid contact. These results will provide theoretical guide to further understand the material removal mechanism of in wafer CMP. Keywords: Chemical mechanical polishing, material removal mechanism, lubrication form, boundary lubrication.

Study on Contact Mechanism of Interface in Wafer CMP Based on Abrasion Behavior

2007 ◽  
Vol 359-360 ◽  
pp. 254-258
Author(s):  
Jian Xiu Su ◽  
Xue Liang Zhang ◽  
Xi Qu Chen ◽  
Jia Xi Du ◽  
Dong Ming Guo
Keyword(s):  
Material Removal ◽  
Removal Rate ◽  
Mechanical Action ◽  
Test Results ◽  
Removal Mechanism ◽  
Contact Form ◽  
Material Removal Mechanism ◽  
Solid Contact ◽  
Chemical Action ◽  
Contact Mechanism

Right getting hold of the contact form between the wafer and the pad is the precondition of fully understanding the material removal mechanism in wafer chemical mechanical polishing (CMP) process. In this paper, according to friction and abrasion theory, the differentiating method of contact form between the wafer and the pad has been obtained firstly. Then, the material removal rate (MRR) produced by mechanical action, chemical action and their interaction has been achieved by test results of MRR. According to analysis on test results of MRR, it is concluded that the mechanical action produced by abrasives is the main mechanical action, the MRR produced by the interaction between the mechanical action of abrasives and chemical action of slurry is the main MRR and the contact form between the wafer and the pad is solid-solid contact in wafer CMP. These results will provide theoretical guide to further understand the material removal mechanism of in wafer CMP.

Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Removal Mechanism ◽  
Particle Movement ◽  
Material Removal Mechanism ◽  
The Relationship ◽  
Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

CHEMICAL MECHANICAL POLISHING AND ITS MECHANISM ON YTTERBIUM-DOPED MIXED SESQUIOXIDES (Yb:LuScO3)

2020 ◽  
pp. 2050036
Author(s):  
YUANYUAN FANG ◽  
HONGBO HE ◽  
LUNZHE WU ◽  
ZHE WANG ◽  
AIHUAN DUN ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Scanning Probe ◽  
Basic Material ◽  
Atomic Step ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Material Removal Model ◽  
Removal Model

In this paper, Yb:LuScO3 crystal was processed by chemical mechanical polishing (CMP), and the surface roughness of 0.18[Formula: see text]nm was obtained. The atomic step structures of these sesquioxide crystals are successfully characterized by AFM scanning probe technology. Through several CMP experiments, the basic material removal mechanism of a ytterbium-doped LuScO3 crystal during CMP is studied. Based on the findings, a material removal model is established. The results of this study provide ideas for the study of CMP, crystal growth and epitaxy.

Study on Chemical Mechanical Polishing Removal Mechanism of Monocrystalline Silicon

2014 ◽  
Vol 538 ◽  
pp. 40-43
Author(s):  
Hong Wei Du ◽  
Yan Ni Chen
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Polishing Pressure

In this paper, material removal mechanism of monocrystalline silicon by chemical etching with different solutions were studied to find effective oxidant and stabilizer. Material removal mechanism by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of silicon wafers. The chemical mechanical polishing (CMP) processes of monocrystalline silicon wafers were analyzed in detail according to the observation and measurement of the polished surfaces with XRD. The results show that H2O2 is effective oxidant and KOH stabilizer. In a certain range, the higher concentration of oxidant, the higher material removal rate; the higher the polishing liquid PH value, the higher material removal rate. The polishing pressure is an important factor to obtain ultra-smooth surface without damage. Experimental results obtained silicon polishing pressure shall not exceed 42.5kPa.

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