Characterization of a bent Laue double-crystal beam-expanding monochromator

A bent Laue double-crystal monochromator system has been designed for vertically expanding the X-ray beam at the Canadian Light Source's BioMedical Imaging and Therapy beamlines. Expansion by a factor of 12 has been achieved without deteriorating the transverse coherence of the beam, allowing phase-based imaging techniques to be performed with high flux and a large field of view. However, preliminary studies revealed a lack of uniformity in the beam, presumed to be caused by imperfect bending of the silicon crystal wafers used in the system. Results from finite-element analysis of the system predicted that the second crystal would be most severely affected and has been shown experimentally. It has been determined that the majority of the distortion occurs in the second crystal and is likely caused by an imperfection in the surface of the bending frame. Measurements were then taken to characterize the bending of the crystal using both mechanical and diffraction techniques. In particular, two techniques commonly used to map dislocations in crystal structures have been adapted to map local curvature of the bent crystals. One of these, a variation of Berg–Berrett topography, has been used to quantify the diffraction effects caused by the distortion of the crystal wafer. This technique produces a global mapping of the deviation of the diffraction angle relative to a perfect cylinder. This information is critical for improving bending and measuring tolerances of imperfections by correlating this mapping to areas of missing intensity in the beam.

Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization

In this work, aggregate epitaxial carrot distributions are observed at the crystal, wafer and dislocation defect levels, instead of individual extended carrot defect level. From combining large volumes of data, carrots are observed when both threading screw dislocations (TSD) and basal plane dislocations (BPD) densities are locally high as seen in full wafer maps. Dislocation density distributions in areas of carrot formation are shown, and suggest TSD limit the formation of carrots in regions containing BPD. These data also add support for mechanisms requiring the need for both dissociated BPD and TSD for carrot formation.

Experiment on Chemical Magnetorheological Finishing of SiC Single Crystal Wafer

Experiment was performed to examine the plane polishing of SiC single crystal wafer by using the chemical magnetorheological finishing (CMRF) technique. The influence of some process parameters such as the concentration of diamond abrasive particles, the concentration of carbonyl iron powder and the machining gap in CMRF were studied comparing with the magnetorheological finishing (MRF) method. The results show that the surface roughness of polished SiC single crystal by the CMRF is slightly lower than that by the MRF. Polishing liquid with different components and processing parameters affects the coupling effect of mechanical removal and chemical removal in CMRF, and a better coupling effect can produce a better surface quality in CMRP. In the MRF, the surface roughness of SiC single crystal is lower for a higher concentration of carbonyl iron powder (CIP). However, in the CMRF, the CIP’s concentration may change the contact state between the catalyst and SiC, and the CIP’s concentration of about 20% can produce a better surface roughness of SiC. The machining gap between the polishing disk and the workpiece surface determines the processing effect, and the machining gap of 1.0 mm is suitable for the polishing of SiC in the MRF and CMRF.