Simulation of Dirac Electron Tunneling Current in Armchair Graphene Nanoribbon Tunnel Field-Effect Transistors Using a Transfer Matrix Method
2015 ◽
Vol 1112
◽
pp. 128-132
Keyword(s):
We simulate quantum mechanical tunneling current in armchair graphene nanoribbon tunnel field-effect transistors (AGNR-TFETs). The relativistic Dirac equation is used to determine electron wave functions in the AGNRs, while the potential profile is solved by the Poisson equation. We use a transfer matrix method (TMM) to calculate the electron transmittance and the Dirac electron tunneling current in the AGNR-TFETs. The results show that the Dirac electron tunneling current increases with increasing the drain and gate voltages. Moreover, the AGNR width and the thickness of insulator affect the characteristics of the Dirac electron tunneling currents.
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(3)
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pp. 03036-1-03036-5
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Vol 539
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pp. 012020
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Vol 896
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Vol 974
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2017 ◽
Vol 180
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pp. 012011
2015 ◽
Vol 1112
◽
pp. 102-105
2014 ◽
Vol 4
(4)
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pp. 259-262