Enhancement of Resistivity of CdZnTe Crystal by Laser Radiation
Keyword(s):
The enhancement of CdZnTe crystal resistivity by λ=1064nm Nd:YAG laser radiation was shown. This effect is explained by compensation of cadmium vacancy (VCd) by indium atoms due to a laser-induced temperature gradient around Te inclusions. The temperature gradient is caused by the selective absorption of the laser radiation by the Te inclusions.
Keyword(s):
2013 ◽
Vol 41
(2)
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pp. 149
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Keyword(s):
1990 ◽
Vol 8
(6)
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pp. 35-38
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Keyword(s):
1993 ◽
Vol 13
(5)
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pp. 528-536
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