Effect of Borax Content on Composition and Microstructure of Boride Layer by Electrodeposition

2011 ◽  
Vol 179-180 ◽  
pp. 508-512 ◽  
Author(s):  
Hai Li Yang ◽  
Ning He ◽  
Guo Zhang Tang ◽  
Yun Gang Li ◽  
Yu Zhu Zhang

Boronizing of silicon steel is performed by electrodeposition in KCl-NaCl-NaF-Na2B4O710H2O molten salts with different amounts of borax. The effect of borax content on composition and microstructure of boride layer is studied. The compositional depth profile of boride layer is measured using the glow discharge spectrometry (GDS) and the depth from the surface to the substrate is taken as the layer thickness. The surface morphology is studied by atomic force microscopy (AFM). It is found that the thickness of the boride layer reached maximum values when the borax content is 0.05mol. The roughness decreases with raising borax content from 0.01 to 0.05mol while the further increase of borax content from 0.05 to 0.1mol results in increase of roughness. The boride layer formed at borax content 0.05 mol shows smallest values of surface roughness.

1996 ◽  
Vol 452 ◽  
Author(s):  
W. H. Thompson ◽  
Z. Yamani ◽  
H. M. Nayfeh ◽  
M.-A. Hasan ◽  
J. E. Greene ◽  
...  

AbstractThe surface morphology of Ge grown on Si (001) and porous Si(001) by molecular beam epitaxy at 380 °C is examined using atomic force microscopy (AFM). For layer thicknesses of 30 nm, the surface shows islanding while still maintaining some of the underlying roughness of the surface of porous Si. For thicknesses in the 100 nm range, the surface roughness is not visible, but the islanding persists. Unlike the case of silicon where islands tend to merge and nearly disappear as the thickness of the deposited layer rises, we observe on the porous layer the persistence of the islands with no merging even for macroscopic thicknesses as large as 0.73 microns.


2016 ◽  
Vol 858 ◽  
pp. 233-236 ◽  
Author(s):  
Nadeemullah A. Mahadik ◽  
Robert E. Stahlbush ◽  
Eugene A. Imhoff ◽  
M.J. Tadjer ◽  
G.E. Ruland ◽  
...  

Basal Plane Dislocations (BPD) intersecting the SiC substrate surface were converted to threading edge dislocations (TED) by high temperature annealing of the substrates in the temperature range of 1750 °C – 1950 °C. Successively, epitaxial growth on annealed as well as non-annealed samples was performed, concurrently, to investigate the effect of the substrate annealing on BPD mitigation in the epilayers. For the 1950 °C/10min anneal, a 3x reduction in BPD density was observed. Additionally, surface roughness measured using atomic force microscopy revealed no degradation in surface morphology of the grown epilayers after annealing.


2005 ◽  
Vol 11 (2) ◽  
pp. 124-132 ◽  
Author(s):  
Giorgio S. Senesi ◽  
Mariangela A. Nitti ◽  
Antonio Valentini

Evaporation rate and subsequent exposure to humid air affect the surface morphology and composition of cesium iodide (CsI) films and, in turn, their photoemissive efficiency when used as photocathodes. The surface morphology and elemental composition of 300-nm-thick CsI films grown at two different rates (1 nm/s and 0.04 nm/s), both freshly evaporated and after 24-h exposure to humid air were investigated by means of atomic force microscopy and scanning electron microscopy/electron diffraction spectroscopy. The CsI film freshly evaporated at a slow rate exhibited a granular surface presenting circular holes or craters where the CsI material was moved from the center to the boundaries. After 24-h exposure to humid air, this film coalesced in large grain showing a marked increase of surface roughness. Conversely, the CsI film grown at a fast rate mostly retained its original surface uniformity and homogeneity with no presence of holes and craters after 24-h exposure to humid air. Further, surface roughness and average peak height decreased, but the surface coalesced in large grains spaced by small fractures where the CsI coverage was almost lost. In conclusion, the films grown at a fast evaporation rate were affected by 24-h exposure to humid air less than those grown at a slow rate, and are thus expected to possess a greater long-term stability.


2003 ◽  
Vol 02 (04n05) ◽  
pp. 343-348 ◽  
Author(s):  
CHIH-HAO LEE ◽  
WEN-YEN PEN ◽  
MING-ZHE LIN ◽  
KUAN-LI YU ◽  
JEN-CHUNG HSUEH

Atomic force microscopy and X-ray reflectivity methods are used to characterize a surface morphology which includes the information of rms roughness, roughness exponent, and the height–height correlation length. Two major reasons to interpret the discrepancy of rms roughness data measured by AFM and X-ray reflectivity are (1) the bandpass of power spectra density is different and (2) the X-ray reflectivity probes the high density buried layer.


2020 ◽  
Author(s):  
Benjamin P. A. Gabriele ◽  
Craig J. Williams ◽  
Douglas Stauffer ◽  
Brian Derby ◽  
Aurora J. Cruz-Cabeza

<div> <div> <div> <p>Single crystals of aspirin form I were cleaved and indented on their dominant face. Upon inspection, it was possible to observe strongly anisotropic shallow lateral cracks due to the extreme low surface roughness after cleavage. Atomic Force Microscopy (AFM) imaging showed spalling fractures nucleating from the indent corners, forming terraces with a height of one or two interplanar spacings d100. The formation of such spalling fractures in aspirin was rationalised using basic calculations of attachment energies, showing how (100) layers are poorly bonded when compared to their relatively higher intralayer bonding. An attempt at explaining the preferential propagation of these fractures along the [010] direction is discussed. </p> </div> </div> </div>


2020 ◽  
Author(s):  
Benjamin P. A. Gabriele ◽  
Craig J. Williams ◽  
Douglas Stauffer ◽  
Brian Derby ◽  
Aurora J. Cruz-Cabeza

<div> <div> <div> <p>Single crystals of aspirin form I were cleaved and indented on their dominant face. Upon inspection, it was possible to observe strongly anisotropic shallow lateral cracks due to the extreme low surface roughness after cleavage. Atomic Force Microscopy (AFM) imaging showed spalling fractures nucleating from the indent corners, forming terraces with a height of one or two interplanar spacings d100. The formation of such spalling fractures in aspirin was rationalised using basic calculations of attachment energies, showing how (100) layers are poorly bonded when compared to their relatively higher intralayer bonding. An attempt at explaining the preferential propagation of these fractures along the [010] direction is discussed. </p> </div> </div> </div>


2021 ◽  
Vol 21 (1) ◽  
Author(s):  
Juan Gros-Otero ◽  
Samira Ketabi ◽  
Rafael Cañones-Zafra ◽  
Montserrat Garcia-Gonzalez ◽  
Cesar Villa-Collar ◽  
...  

Abstract Background To compare the anterior surface roughness of two commercially available posterior chamber phakic intraocular lenses (IOLs) using atomic force microscopy (AFM). Methods Four phakic IOLs were used for this prospective, experimental study: two Visian ICL EVO+ V5 lenses and two iPCL 2.0 lenses. All of them were brand new, were not previously implanted in humans, were monofocal and had a dioptric power of − 12 diopters (D). The anterior surface roughness was assessed using a JPK NanoWizard II® atomic force microscope in contact mode immersed in liquid. Olympus OMCL-RC800PSA commercial silicon nitride cantilever tips were used. Anterior surface roughness measurements were made in 7 areas of 10 × 10 μm at 512 × 512 point resolution. The roughness was measured using the root-mean-square (RMS) value within the given regions. Results The mean of all anterior surface roughness measurements was 6.09 ± 1.33 nm (nm) in the Visian ICL EVO+ V5 and 3.49 ± 0.41 nm in the iPCL 2.0 (p = 0.001). Conclusion In the current study, we found a statistically significant smoother anterior surface in the iPCL 2.0 phakic intraocular lenses compared with the VISIAN ICL EVO+ V5 lenses when studied with atomic force microscopy.


1992 ◽  
Author(s):  
Mark R. Kozlowski ◽  
Michael C. Staggs ◽  
Mehdi Balooch ◽  
Robert J. Tench ◽  
Wigbert J. Siekhaus

1999 ◽  
Vol 200 (3-4) ◽  
pp. 348-352 ◽  
Author(s):  
R.S Qhalid Fareed ◽  
S Tottori ◽  
K Nishino ◽  
S Sakai

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