PZT Thin Films from Bulk PZT for Vibration Power Harvester Applications

The objective of this work was the development of a technology for the fabrication of piezoelectric PZT thin films from bulk PZT on silicon wafer for micro power harvester applications. With the lapping technique, the thickness of bulk PZT was reduced from 300µm to 10µm at the top data. KOH etching for silicon was used to thin the thickness of silicon cantilever from 300µm to 15µm at the top data. The piezoelectric coefficient d31 was measured to be -12pC/N. Resonance frequency measurements on a 4mmX1mmX0.06mm cantilever resulted in a value of 430Hz, and the voltage output was around 0.68V at 1g acceleration. The result shows that the fabrication process is quite feasible.

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A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method

Materials Science Forum ◽

10.4028/www.scientific.net/msf.663-665.650 ◽

2010 ◽

Vol 663-665 ◽

pp. 650-653

Author(s):

Jin Moo Byun ◽

Jeong Sun Han ◽

Jae Hyoung Park ◽

Seong Eui Lee ◽

Hee Chul Lee

Keyword(s):

Thin Films ◽

Piezoelectric Coefficient ◽

Energy Harvester ◽

Sol Gel ◽

Pure Perovskite Structure ◽

Pzt Thin Films ◽

Gel Method ◽

Sol Gel Method ◽

Si Substrates ◽

Pzt Thin Film

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

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Dynamic and long-time tests of the transverse piezoelectric coefficient in PZT thin films

2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices & Workshop on Piezoresponse Force Microscopy ◽

10.1109/isaf.2014.6922998 ◽

2014 ◽

Cited By ~ 3

Author(s):

A. Mazzalai ◽

D. Balma ◽

N. Chidambaram ◽

P. Muralt ◽

L. Colombo

Keyword(s):

Thin Films ◽

Piezoelectric Coefficient ◽

Pzt Thin Films ◽

Long Time

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The wafer flexure technique for the determination of the transverse piezoelectric coefficient (d31) of PZT thin films

Sensors and Actuators A Physical ◽

10.1016/s0924-4247(98)00161-7 ◽

1998 ◽

Vol 71 (1-2) ◽

pp. 133-138 ◽

Cited By ~ 156

Author(s):

J.F. Shepard ◽

P.J. Moses ◽

S. Trolier-McKinstry

Keyword(s):

Thin Films ◽

Piezoelectric Coefficient ◽

Pzt Thin Films

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A silicon cantilever beam structure for the evaluation of d31, d33 and e31 piezoelectric coefficients of PZT thin films

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics ◽

10.1109/isaf.2007.4393383 ◽

2007 ◽

Cited By ~ 1

Author(s):

Romain Herdier ◽

David Jenkins ◽

Denis Remiens ◽

M. Dupont ◽

D. Osmont

Keyword(s):

Thin Films ◽

Cantilever Beam ◽

Beam Structure ◽

Pzt Thin Films ◽

Silicon Cantilever

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Dynamic and long-time tests of the transverse piezoelectric coefficient in PZT thin films

2014 15th International Conference on Electronic Packaging Technology ◽

10.1109/icept.2014.6918749 ◽

2014 ◽

Author(s):

A. Mazzalai ◽

D. Balma ◽

N. Chidambaram ◽

P. Muralt ◽

L. Colombo

Keyword(s):

Thin Films ◽

Piezoelectric Coefficient ◽

Pzt Thin Films ◽

Long Time

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Excimer laser ablation of PZT thin films on silicon cantilever beams

Sensors and Actuators A Physical ◽

10.1016/0924-4247(94)00871-e ◽

1995 ◽

Vol 46 (1-3) ◽

pp. 104-109 ◽

Cited By ~ 15

Author(s):

Jyrki Lappalainen ◽

Johannes Frantti ◽

Hannu Moilanen ◽

Seppo Leppävuori

Keyword(s):

Thin Films ◽

Laser Ablation ◽

Excimer Laser ◽

Cantilever Beams ◽

Pzt Thin Films ◽

Excimer Laser Ablation ◽

Silicon Cantilever

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Compositional Dependence of the Young’s Modulus and Piezoelectric Coefficient of (110)-Oriented Pulsed Laser Deposited PZT Thin Films

Journal of Microelectromechanical Systems ◽

10.1109/jmems.2014.2323476 ◽

2015 ◽

Vol 24 (1) ◽

pp. 166-173 ◽

Cited By ~ 10

Author(s):

Hammad Nazeer ◽

Minh D. Nguyen ◽

Ozlem Sardan Sukas ◽

Guus Rijnders ◽

Leon Abelmann ◽

...

Keyword(s):

Thin Films ◽

Young’S Modulus ◽

Piezoelectric Coefficient ◽

Young's Modulus ◽

Pulsed Laser ◽

Compositional Dependence ◽

Pzt Thin Films

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Cost-Effective Measurements of Piezoelectric Coefficient d33 of Thin-Film PZT Using a Mini Force Hammer

Volume 7: 5th International Conference on Micro- and Nanosystems; 8th International Conference on Design and Design Education; 21st Reliability, Stress Analysis, and Failure Prevention Conference ◽

10.1115/detc2011-47512 ◽

2011 ◽

Author(s):

Qing Guo ◽

G. Z. Cao ◽

I. Y. Shen

Keyword(s):

Thin Film ◽

Thin Films ◽

Piezoelectric Coefficient ◽

New Method ◽

Specimen Thickness ◽

Film Material ◽

Impulsive Force ◽

Pzt Thin Films ◽

Aspect Ratios ◽

Pzt Thin Film

Lead Zirconate Titanate (PbZrxTi1−xO3 or PZT) is a piezoelectric material widely used as sensors and actuators. For microactuators, PZT often appears in the form of thin films to maintain proper aspect ratios. One major challenge encountered is accurate measurement of piezoelectric coefficients of PZT thin films. In this paper, we present a simple, low-cost, and effective method to measure piezoelectric coefficient d33 of PZT thin films through use of basic principles in mechanics of vibration. We use a small impact hammer with a tiny tip to generate an impulsive force acting perpendicularly to the surface of a PZT film. In the meantime, we measure the impulsive force via a load cell and the responding charge of the PZT thin film via a charge amplifier. Then the piezoelectric coefficient d33 is obtained from the measured force and charge based on piezoelectricity and a finite element modeling. We also conduct a thorough parametric study to understand the sensitivity of this method on various parameters, such as substrate material, boundary conditions, specimen size, specimen thickness, thickness ratio, and PZT thin-film material. To demonstrate the feasibility, we calibrate the new method via a PZT thick film disk resonator with a known d33. Experimental results show that d33 measured via this method is as accurate as those from the manufacturer’s specifications within its tolerance. We then apply the new method to PZT thin films deposited on silicon substrate, and successfully measure the corresponding piezoelectric coefficient d33.

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