Dislocation Generated by Electron Irradiation

2011 ◽  
Vol 418-420 ◽  
pp. 744-747
Author(s):  
Suryanto

Dislocation loop was generated by electron irradiation in nickel aluminum alloy. It is important to know dislocation characteristics obtained from a high energetic electron irradiation. If b is the Burger vector of a dislocation loop and g is the diffraction vector, dislocation loop will appear larger, smaller or disappear for g.b>0, g.b<0 or g.b=0, respectively. Dislocation loop was determined as follows – first, the appearance of dislocation loops is arranged in observation table. Second, based on type of dislocation loop, Burger vector and diffraction vector, appearance of dislocation loop is arranged in calculation table. Third, based on observation and calculation table, Burger vector and type of dislocation loop is determined. The results show that dislocation loops consist of perfect dislocation loops and Frank dislocation loops. The perfect dislocation loops have Burger vectors of ½[0 ] and ½[ 0] while Frank dislocation loops have Burger vectors of ⅓[1 1], ⅓[11 ], ⅓[ 11], ⅓[111], ⅓[1 1], ⅓[11 ] and ⅓[ 11]. All dislocation loops are interstitial types.

Author(s):  
J.A. Lambert ◽  
P.S. Dobson

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.


2014 ◽  
Vol 455 (1-3) ◽  
pp. 253-257 ◽  
Author(s):  
Farong Wan ◽  
Qian Zhan ◽  
Yi Long ◽  
Shanwu Yang ◽  
Gaowei Zhang ◽  
...  

Heterocycles ◽  
2002 ◽  
Vol 57 (9) ◽  
pp. 1683 ◽  
Author(s):  
Shuntaro Mataka ◽  
Kichinosuke Kamata ◽  
Yoh-ichi Tominaga ◽  
Akiyoshi Tori-i ◽  
Thies Thiemann ◽  
...  

1986 ◽  
Vol 51 (4) ◽  
pp. 513-517 ◽  
Author(s):  
George Lunn ◽  
Eric B. Sansone

1996 ◽  
Vol 442 ◽  
Author(s):  
X. Duan ◽  
J. Palm ◽  
B. Zheng ◽  
M. Morse ◽  
J. Michel ◽  
...  

AbstractA systematic study of defects in the Er/O implanted silicon was conducted using TEM, HRTEM and SIMS. Defect-free material was obtained after the annealing of 400 keV Er+ implanted (100)Si. In sharp contrast, several forms of secondary defects consisting of dislocations, dislocation loops and precipitates were induced upon annealing at different temperatures in the 4.5 MeV implanted (100)Si sample. The isothermal evolution of the defects and reactions between dopants and defects were studied. Oxygen tends to segregate into the dislocation loop zones, where platelet precipitates with habit planes of {111} were found. Following dissociation of oxygen and erbium, plate-like Er precipitates were generated, which are most likely ErSi2 with a habit plane of {111}


2019 ◽  
Vol 10 ◽  
pp. 1434-1442 ◽  
Author(s):  
Hong-long Shi ◽  
Bin Zou ◽  
Zi-an Li ◽  
Min-ting Luo ◽  
Wen-zhong Wang

The prominent role of oxygen vacancies in the photocatalytic performance of bismuth tungsten oxides is well recognized, while the underlying formation mechanisms remain poorly understood. Here, we use the transmission electron microscopy to investigate the formation of oxygen vacancies and the structural evolution of Bi2WO6 under in situ electron irradiation. Our experimental results reveal that under 200 keV electron irradiation, the breaking of relatively weak Bi–O bonds leads to the formation of oxygen vacancies in Bi2WO6. With prolonged electron irradiation, the reduced Bi cations tend to form Bi clusters on the nanoflake surfaces, and the oxygen atoms are released from the nanoflakes, while the W–O networks reconstruct to form WO3. A possible mechanism that accounts for the observed processes of Bi cluster formation and oxygen release under energetic electron irradiation is also discussed.


1997 ◽  
Vol 490 ◽  
Author(s):  
Jing-Hong Li ◽  
Kevin S. Jones

ABSTRACTThe annealing kinetics of implant damage in Si+ implanted Si has been investigated using in-situ and ex-situ annealing of transmission electron microscopy (TEM) samples prepared prior to annealing. The defect evolution at 800°C was studied for a Si wafer implanted with Si+ at 100keV to a dose of 2×1014 cm-2. This implant was above the sub-threshold loop formation threshold allowing one to study simultaneously the {311} defect dissolution and dislocation loop nucleation and growth. In order to study the effect on the defect evolution of using a thin sample for an in-situ annealing experiment, a pair of samples, one thick and one thinned into a TEM sample, were annealed in a furnace simultaneously. It was found that the presence of a second surface 2000Å below the implant damage did not affect the extended defect evolution. For the in-situ annealing study it was found that the {311} dissolution process and sub-threshold dislocation loop formation process was not affected by the TEM electron beam at 160kV as long as an 800°C furnace pre-anneal was done prior to in-situ annealing. The dissolution rate of the {311} defects was used to confirm the TEM holder furnace temperature. The results of both the in-situ the {311} defects is released during the 311 dissolution process and 30% comes to reside in dislocation loops. Thus, the loops appear to contain a significant fraction of the total interstitial concentration introduced by the implant.


1997 ◽  
Vol 34 (11) ◽  
pp. 1079-1086 ◽  
Author(s):  
Haruo NAKAMICHI ◽  
Chiken KINOSHITA ◽  
Kazuhiro YASUDA ◽  
Shinya FUKADA

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