Application of Schottky Bulk-Layer Design on Double-Heterojunction Pseudomorphic AlGaAs/InGaAs/AlGaAs High Electron Mobility Transistors (DH-HEMTs)

2008 ◽  
Vol 47-50 ◽  
pp. 419-422
Author(s):  
Meng Kai Hsu ◽  
Jung Hui Tsai ◽  
Shao Yen Chiu ◽  
Chung Hsien Wu ◽  
Kum Chieh Liang ◽  
...  
Keyword(s):  
Microwave Power ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Class Ab ◽  
Power Added Efficiency ◽  
Bulk Layer ◽  
Electron Mobility Transistors ◽  
Field Peak ◽  
Double Heterojunction ◽  
Saturated Output Power

In this work, an application of wide-gap updoed-Al0.22Ga0.78As bulk to perform the field-plate gate (FP-gate) on Al0.22Ga0.78As/In16Ga84As/Al0.22Ga0.78As DH-HEMTs was investigated. The simulated FPG-devices with a bulk thickness of 1200 Å, exhibit an excellent dispersing property to the electric field peak under gate electrode near to drain side, hence, the breakdown characteristics were effectively improved. Measured gate-diode performance of FPG-device presents a higher breakdown voltage (VBR) of -25.5 V than devices with single recess (SRG-device). Enhancement of device breakdown is contributive to microwave power performances. At 2.4 GHz load-pull measurement of studied devices which were biased at class AB operation, the saturated output power (POUT), power gain (GP) and power-added efficiency (PAE) were 13.06 dBm (202 mW/mm), 12.8 db and 47.3% for FPG-device. These measured results of SRG-device were 10.3 dBm(107 mW/mm), 13.2 db and 38.5%, According to the simulated results, FPG-devices structuring with a bulk layer exhibit excellent performance for high breakdown and microwave power operation.

scholarly journals Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

2011 ◽  
Vol 3 (3) ◽  
pp. 301-309 ◽  
Author(s):  
Olivier Jardel ◽  
Guillaume Callet ◽  
Jérémy Dufraisse ◽  
Michele Piazza ◽  
Nicolas Sarazin ◽  
...  
Keyword(s):  
High Frequency ◽  
Continuous Wave ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Power Added Efficiency ◽  
Electron Mobility Transistors ◽  
X Band ◽  
Gan Hemts ◽  
Load Pull ◽  
Interesting Alternative

A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show excellent power performances and constitute a particularly interesting alternative to AlGaN/GaN HEMTs, especially for high-frequency applications beyond the X band. The measured transistors with 250 nm gate lengths from different wafers delivered in continuous wave (cw): 10.8 W/mm with 60% associated power added efficiency (PAE) at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10.24 GHz, and 4.2 W/mm with 43% associated PAE at 18 GHz.

Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs

2016 ◽  
Vol 8 (4-5) ◽  
pp. 663-672 ◽  
Author(s):  
Agostino Benvegnù ◽  
Davide Bisi ◽  
Sylvain Laurent ◽  
Matteo Meneghini ◽  
Gaudenzio Meneghesso ◽  
...  
Keyword(s):  
Deep Level ◽  
Low Frequency ◽  
Frequency Dispersion ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Current Transient ◽  
High Electron ◽  
Large Signal ◽  
Class Ab ◽  
Electron Mobility Transistors

This paper presents a detailed trap investigation based on combined pulsed I/V measurements, drain current transient (DCT) measurements and low-frequency dispersion measurements of transconductance (LF Y21) and output conductance (LF Y22). DCT characterization is carried out over a 7-decade time scale. LF Y21and Y22measurements are carried out over the frequency range from 100 Hz to 1 GHz. These combined measurements were performed at several temperatures for AlGaN/GaN high electron mobility transistors under class AB bias condition and allowed the extraction of the activation energy (Ea) and the capture cross section (σc) of the identified traps. Extensive measurements of these characteristics as a function of device bias are reported in this work to understand the dynamic trap behavior. This paper demonstrated a correlation between LF small-signal (LF Y21and Y22) and large-signal voltage steps (DCT) results. These measurements allow identifying the same 0.64 eV deep level, attributed to a native defect of GaN, possibly located in the buffer layer.

Sign in / Sign up

Export Citation Format

Share Document