Electrical Contact of Au with CNTs Deposited at Different Deposition Temperatures on Silicon Substrate

2013 ◽  
Vol 667 ◽  
pp. 80-85
Author(s):  
F.S. Husairi ◽  
S.A.M Zobir ◽  
Mohamad Rusop Mahmood ◽  
Saifollah Abdullah
Keyword(s):  
Carbon Nanotubes ◽  
Raman Spectroscopy ◽  
Silicon Substrate ◽  
Electrical Contact ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Micro Raman Spectroscopy ◽  
Vapor Deposition Technique ◽  
Different Temperatures ◽  
P Type

In this work, the electrical properties of carbon nanotubes were deposited on silicon substrate at different temperatures studied. CNTs were deposited on silicon at temperature 700 to 850 0C by using double-furnace thermal chemical vapor deposition technique. Carbon nanotubes with diameters of 20 to 30 nm were successfully synthesized on a silicon substrate. In this system, carbon nanotubes were grown directly on the p-type silicon. The samples were characterized using field emission scanning electron microscopy and micro-Raman spectroscopy. Based on micro-Raman spectroscopy result, the peak carbon nanotube (around 1 300 to 1 600 nm) was detected. Good electrical contact produced when Au sputter on CNTs characterized by I-V probe. Samples CNTs produced at 850 OC possess good conducting compare to other.

The Structural Properties of Carbon Nanotubes Grown on Porous Silicon-Based Materials by Thermal Chemical Vapor Deposition Method

2013 ◽  
Vol 686 ◽  
pp. 28-32 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
S.A.M. Zobir ◽  
Mohamad Rusop ◽  
Saifolah Abdullah
Keyword(s):  
Carbon Nanotubes ◽  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Micro Raman Spectroscopy ◽  
Porous Silicon Substrate ◽  
Align Carbon Nanotubes

In this paper, carbon nanotubes on porous silicon substrate were developed in order to get high quality nanotubes for various kind of application. CNTs were deposited on porous silicon nanostructures (PSiN) at 750 0C on porous silicon by using double-furnace thermal chemical vapor deposition technique. Align carbon nanotubes with diameters of 15 to 30 nm were successfully synthesized on a porous silicon substrate. In this system, carbon nanotubes were grown directly on the p-type porous silicon surface at 750 0C for a total time of 30 minutes. The samples were characterized using field emission scanning electron microscopy and micro-Raman spectroscopy. Align carbon nanotubes (ACNTs) bundle with uniform diameter (~20 nm) were found grown on porous silicon at certain area. Based on micro-Raman spectroscopy result, the peak of silicon at ~520 nm and peak of carbon nanotube (around 1 300 to 1 600 nm) was detected.

The Structural Properties of Carbon Nanotubes Grown on Porous Silicon-Based Materials by Thermal Chemical Vapor Deposition Method

2013 ◽  
Vol 667 ◽  
pp. 477-481
Author(s):  
F.S. Husairi ◽  
S.A.M. Zobir ◽  
Mohamad Rusop Mahmood ◽  
Saifollah Abdullah
Keyword(s):  
Carbon Nanotubes ◽  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Micro Raman Spectroscopy ◽  
Porous Silicon Substrate ◽  
Align Carbon Nanotubes

In this paper, carbon nanotubes on porous silicon substrate were developed in order to get high quality nanotubes for various kind of application. CNTs were deposited on porous silicon nanostructures (PSiN) at 750 0C on porous silicon by using double-furnace thermal chemical vapor deposition technique. Align carbon nanotubes with diameters of 15 to 30 nm were successfully synthesized on a porous silicon substrate. In this system, carbon nanotubes were grown directly on the p-type porous silicon surface at 750 0C for a total time of 30 minutes. The samples were characterized using field emission scanning electron microscopy and micro-Raman spectroscopy. Align carbon nanotubes (ACNTs) bundle with uniform diameter (~20 nm) were found grown on porous silicon at certain area. Based on micro-Raman spectroscopy result, the peak of silicon at ~520 nm and peak of carbon nanotube (around 1 300 to 1 600 nm) was detected.

Curvature-induced Symmetry Lowering and Anomalous Dispersion of Phonons in Single-Walled Carbon Nanotubes

2011 ◽  
Vol 1284 ◽  
Author(s):  
Jason Reppert ◽  
Ramakrishna Podila ◽  
Nan Li ◽  
Codruta Z. Loebick ◽  
Steven J. Stuart ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Intermediate Frequency ◽  
Single Wall Carbon Nanotubes ◽  
Dynamic Simulations ◽  
Strong Electron ◽  
Band Frequency ◽  
Vapor Deposition Technique ◽  
Different Temperatures

ABSTRACTHere we report rich and new resonant Raman spectral features for several sub-nanometer diameter single wall carbon nanotubes (sub-nm SWNTs) samples grown using chemical vapor deposition technique operating at different temperatures. We find that the high curvature in sub-nm SWNTs leads to (i) an unusual S-like dispersion of the G‑band frequency due to perturbations caused by the strong electron-phonon coupling, and (ii) an activation of diameter-selective intermediate frequency modes that are as intense as the radial breathing modes (RBMs). Furthermore, an analytical approach which includes the effects of curvature into the overlap integral and the energy gap between the van Hove singularities is discussed. Lastly, we show that the phonon spectra for sub-nm SWNTs obtained from the molecular dynamic simulations which employs a curvature-dependent force field concur with our experimental observations.

Micromachined Silicon Grids for Direct TEM Characterization of Carbon Nanotubes Grown by CVD

2006 ◽  
Vol 963 ◽  
Author(s):  
Yongho Choi ◽  
Jason Johnson ◽  
Ryan Moreau ◽  
Eric Perozziello ◽  
Ant Ural
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Raman Spectroscopy ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Back Side ◽  
Post Processing ◽  
Tem Analysis ◽  
Micro Raman Spectroscopy

ABSTRACTTransmission electron microscopy (TEM) is a key technique in the structural characterization of carbon nanotubes. For device applications, carbon nanotubes are typically grown by chemical vapor deposition (CVD) on silicon substrates. However, TEM requires very thin samples, which are electron transparent. Therefore, for TEM analysis, CVD grown nanotubes are typically deposited on commercial TEM grids by post-processing. This procedure has two problems: It can damage the nanotubes, and it does not work reliably if the nanotube density is too low. The ability to do TEM directly on as-grown nanotubes lying on the silicon substrate would solve these two problems. In this work, for this purpose, we have fabricated micromachined TEM grids from silicon substrates. In particular, we have wet-etched large membranes from the back side of silicon wafers with a thin layer of thermal oxide on them. We have then etched a large array of long and narrow open slits on these membranes from the top side using a deep silicon etcher. Subsequently, we have grown nanotubes on these micromachined TEM grids by CVD, and characterized the nanotubes by high resolution TEM (HRTEM), micro-Raman spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM). Since the nanotubes grown on the micromachined substrates are completely suspended over the width of the open slits, these substrates form a natural TEM grid for direct imaging of CVD-grown nanotubes. Furthermore, the signal from the substrate is significantly reduced during micro-Raman spectroscopy, resulting in a better signal-to-noise ratio. In addition, the silicon membranes are strong enough to support AFM and SEM characterization. As a result, these substrates provide a low cost, mass producible, efficient, and reliable platform for direct TEM, Raman, AFM, and SEM analysis of as-grown nanotubes or other nanomaterials on the same substrate, eliminating the need for any post-processing after CVD growth.

Raman Spectroscopy Study of Carbon Nanotubes Prepared at Different Deposition Temperature Using Camphor Oil as a Precursor

2013 ◽  
Vol 832 ◽  
pp. 628-632 ◽  
Author(s):  
M.J. Salifairus ◽  
M.S. Shamsudin ◽  
M. Maryam ◽  
Mohamad Rusop
Keyword(s):  
Carbon Nanotubes ◽  
Raman Spectroscopy ◽  
Electron Microscope ◽  
Plane Waves ◽  
Annealing Treatment ◽  
Chemical Vapor ◽  
Low Frequencies ◽  
Micro Raman Spectroscopy ◽  
Alumina Boat ◽  
Camphor Oil

The aim of this study is to engage a basic understanding of the information micro-Raman spectroscopy may yield when this characterization tool is applied to carbon nanotubes. All collective vibrations that occur in crystals can be viewed as the superposition of plane waves, called phonons, that virtually propagate to infinity. The two dominant Raman features are the radial breathing mode at low frequencies, the tangential G band and the D band multi-feature at higher frequencies. Carbon nanotubes (CNT) were formed by double furnace chemical vapor deposition. This method was based on the pyrolysis of liquid aerosols containing hydrocarbons as carbon source (camphor oil), ferrocene as the catalyst source and nitrogen as the carrier gas. The samples were prepared by placing the carbon precursor on the alumina boat into the first furnace which contains the catalyst source at different alumina boat heated at 200 °C and passed through the deposition furnace. The deposition furnace was heated at 500-900°C for 1 hour depositing CNT without annealing treatment. Then, the samples were characterized using micro-Raman spectrometer obtaining the carbon G and D peaks around 1580 cm1 and 1350 cm1 respectively and the image of the CNT produced were obtained from field emission scanning electron microscope and high resolution transmission electron microscope. Keywords: micro-Raman spectroscopy, Carbon nanotubes, Camphor oil

Growth of Carbon Nanotubes Using MgO Supported Mo-Co Catalysts by Thermal Chemical Vapor Deposition Technique

2013 ◽  
Vol 24 ◽  
pp. 46-57 ◽  
Author(s):  
C. Santhosh ◽  
M. Saranya ◽  
S. Felix ◽  
R. Ramachandran ◽  
N. Pradeep ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Properties ◽  
Chemical Vapor ◽  
Simple Method ◽  
Thermal Chemical Vapor Deposition ◽  
Co Catalysts ◽  
Vapor Deposition Technique ◽  
Synthesis Of Carbon Nanotubes

A simple method is developed for the synthesis of carbon nanotubes (CNTs) using Mo-Co/MgO catalyst by a thermal chemical vapor deposition (CVD) technique. Acetylene was used as the source of carbon and nitrogen as carrier gas. A series of MgO supported Mo-Co catalysts were prepared by the combustion route using urea as the fuel at different stoichiometric ratios. It was found that a higher yield of carbon nanotubes was obtained by the developed catalysts. Also, the addition of molybdenum to Co/MgO catalysts could remarkably increase the yield and also improve the quality of CNTs from thermal CVD with acetylene as precursor gas. The morphology of the catalysts and CNTs obtained was studied by field emission scanning electron microscope (FE-SEM). Other techniques like Raman spectroscopy and XRD were also employed to know the physico-chemical properties of the samples.

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