Study the I-V and C-V Characterization of n-ZnO/p-Si Heterojunction

2013 ◽  
Vol 690-693 ◽  
pp. 607-610
Author(s):  
Xiong Chao ◽  
Li Hua Ding ◽  
Xiao Jin ◽  
Chen Lei ◽  
Hong Chun Yuan ◽  
...  
Keyword(s):  
Transport Mechanism ◽  
Carrier Transport ◽  
Interface States ◽  
Band Offset ◽  
Current Transport ◽  
Valence Band Offset ◽  
Forward Voltage ◽  
Photoelectric Detection ◽  
Photoelectric Properties

A type n conductance of ZnO thin film was deposited on the p-Si filim by magnetron sputtering Al doped ZnO ceramic target, and the ZnO/p-Si heterojunction was preparated. The photoelectric properties, charge carrier transport mechanism were studied by testing the I-V, C-V characteristics with illumination and without illumination. The results shows that there exists a good rectifying properties and photoelectric response for ZnO/p-Si heterojunctions, and can be widely used in photoelectric detection and fields of solar cells. As the conduction band and valence band offset in the ZnO/p-Si heterojunction is too big, the current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at the forward voltage exceeds 1 V. The results suggest the existence of a large number of interface states in ZnO/p-Si heterojunction, and the interface states can be reduced and the photoelectric properties can be further improved.

The carrier transport mechanism and band offset at the interface of ZnO/n-Si(111) heterojunction

2017 ◽  
Vol 217 ◽  
pp. 1-5 ◽  
Author(s):  
Yapeng Li ◽  
Yingfeng Li ◽  
Jianyuan Wang ◽  
Zhirong He ◽  
Yonghong Zhang ◽  
...  
Keyword(s):  
Transport Mechanism ◽  
Carrier Transport ◽  
Band Offset ◽  
Carrier Transport Mechanism

Transport Properties of Narrow Gap II-VI Superlattices

1989 ◽  
Vol 161 ◽  
Author(s):  
C. A. Hoffman ◽  
J. R. Meyer ◽  
F. J. Bartoli
Keyword(s):  
Transport Properties ◽  
Valence Band ◽  
Carrier Transport ◽  
Experimental Results ◽  
Band Offset ◽  
Narrow Gap ◽  
Valence Band Offset ◽  
Band Structures ◽  
Present Understanding ◽  
Carrier Transport Properties

ABSTRACTThe present understanding of the carrier transport properties in Hg-based super-lattices such as the HgTe-CdTe system is reviewed. Novel features in the calculated superlattice band structures and their implications for macroscopic transport properties are discussed. Nearly all of the main experimental results are qualitatively consistent with a large valence band offset, but are difficult to explain if the offset is small. The valence band offset controversy thus appears to have been largely resolved.

Characterization of the valence band offset in p-Si/Si1−xGex/Si by space charge spectroscopy

1994 ◽  
Vol 37 (4-6) ◽  
pp. 945-948 ◽  
Author(s):  
K. Schmalz ◽  
H. Rücker ◽  
I.N. Yassievich ◽  
H.G. Grimmeiss ◽  
B. Dietrich ◽  
...  
Keyword(s):  
Space Charge ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset

scholarly journals A Current Transport Mechanism on the Surface of Pd-SiO2Mixture for Metal-Semiconductor-Metal GaAs Diodes

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
Shih-Wei Tan ◽  
Shih-Wen Lai
Keyword(s):  
Transport Mechanism ◽  
Carrier Transport ◽  
Schottky Contact ◽  
Thermionic Emission ◽  
Image Force ◽  
Current Transport ◽  
Current Transport Mechanism ◽  
Carrier Recombination ◽  
Metal Semiconductor Metal ◽  
A Current

This paper presents a current transport mechanism of Pd metal-semiconductor-metal (MSM) GaAs diodes with a Schottky contact material formed by intentionally mixing SiO2into a Pd metal. The Schottky emission process, where the thermionic emission both over the metal-semiconductor barrier and over the insulator-semiconductor barrier is considered on the carrier transport of a mixed contact of Pd and SiO2(MMO) MSM diodes, is analyzed. The image-force lowering is accounted for. In addition, with the applied voltage increased, the carrier recombination is thus considered. The simulation data are presented to explain the experimental results clearly.

Current Transport Mechanism of n-Type Nanocrystalline FeSi2/Intrinsic Si/p-Type Si Heterojunctions Fabricated by Facing-Targets Direct-Current Sputtering

2013 ◽  
Vol 802 ◽  
pp. 199-203 ◽  
Author(s):  
Nathaporn Promros ◽  
Suguru Funasaki ◽  
Ryūhei Iwasaki ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Ideality Factor ◽  
Low Temperatures ◽  
Transport Mechanism ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Current Transport ◽  
Current Transport Mechanism ◽  
Current Voltage ◽  
P Type ◽  
Direct Current Sputtering

n-Type nanocrystalline FeSi2/intrinsic Si/p-type Si heterojunctions were successfully fabricated by FTDCS and their forward current-voltage characteristics at low temperatures were analyzed on the basis of thermionic emission theory. The analysis of J-V characteristics exhibits an increase in the ideality factor and a decrease in the barrier height at low temperatures. The values of ideality factor were estimated to be 2.26 at 300 K and 9.29 at 77 K. The temperature dependent ideality factortogether with the constant value of parameter A indicated that a trap assisted multi-step tunneling process is the dominant carrier transport mechanism in this heterojunction. At high voltages, the current transport mechanism is dominated by SCLC process.

Strain Modification of Alloy Fluctuations in CdTe/(Cd,MnTe) Superlattice Systems

1986 ◽  
Vol 89 ◽  
Author(s):  
S. A. Jackson ◽  
C. R. McIntyre
Keyword(s):  
Valence Band ◽  
Interface States ◽  
Band Offset ◽  
Valence Band Offset

AbstractWe have calculated the effect of strains on the valence band offset and bandgap in the CdTe/(Cd,Mn)Te superlattice system for various growth directions and alloy compositions. We find that strain can modify the effect of alloy fluctuations on band offset and bandgap. The consequences of this for the formation of interface states will be discussed.

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