Design for Amorphous Silicon Solar Cells

2013 ◽  
Vol 750-752 ◽  
pp. 961-964
Author(s):  
Chun Rong Xue ◽  
Xia Yun Sun

This document explains and demonstrates how to design efficient amorphous silicon solar cells. Some of the fundamental physical concepts required to interpret the scientific literature about amorphous silicon are introduced. The principal methods such as plasma deposition that are used to make amorphous siliconbased solar cells are investigated. On the basis, high-efficiency solar cells based on amorphous silicon technology are designed. Multi-junction amorphous silicon solar cells are discussed, how these are made and how their performance can be understood and optimized. To conclude this document, some of the directions that are important for future progress in the field are presented.

2013 ◽  
Vol 750-752 ◽  
pp. 970-973
Author(s):  
Chun Rong Xue ◽  
Xia Yun Sun

High-efficiency solar cells based on amorphous silicon technology are designed. Multi-junction amorphous silicon solar cells are discussed, how these are made and how their performance can be understood and optimized. Although significant amount of work has been carried out in the last twenty-five years, the Staebler-Wronski effect has limited the development of a-Si:H solar cells. As an alternative material, nc-Si:H has attracted remarkable attention. Taking advantage of a lower degradation in nc-Si:H than a-Si:H and a-SiGe:H alloys, the light induced degradation in triple junction structures has been minimized by designing a bottom-cell-limited current mismatching, and obtained a stable active-area cell efficiency. All this has been investigated in this paper.


1991 ◽  
Vol 30 (Part 1, No. 8) ◽  
pp. 1635-1640 ◽  
Author(s):  
Katsuhiko Higuchi ◽  
Katsuya Tabuchi ◽  
Koeng Su Lim ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi

2019 ◽  
Vol 27 (12) ◽  
pp. 1104-1114 ◽  
Author(s):  
HyunJung Park ◽  
Youngseok Lee ◽  
Se Jin Park ◽  
Soohyun Bae ◽  
Sangho Kim ◽  
...  

1991 ◽  
Vol 23 (2-4) ◽  
pp. 227-238 ◽  
Author(s):  
Hisaki Tarui ◽  
Yasuo Kishi ◽  
Noboru Nakamura ◽  
Masato Nishikuni ◽  
Makoto Tanaka ◽  
...  

2012 ◽  
Vol 98 ◽  
pp. 277-282 ◽  
Author(s):  
Jung Y. Huang ◽  
Chien Y. Lin ◽  
Chang-Hong Shen ◽  
Jia-Min Shieh ◽  
Bau-Tong Dai

2018 ◽  
Vol 69 ◽  
pp. 01008 ◽  
Author(s):  
Gagik Ayvazyan ◽  
Razmik Barseghyan ◽  
Sergey Minasyan

A study on the formation of black silicon (b-Si) antireflection layers on crystalline Si wafers using SF6/O2gas mixture in a reactive ion etching method is presented. The process is low-temperature, fast and does not depend on the crystallographic orientation of the Si wafer. The b-Si layers have demonstrated average reflectance values of 4% and 5% for monoand polycrystalline Si wafers respectively, feature that is suitable for the fabrication of high efficiency solar cells. Passivation of b-Si antireflection layers by suitable different thin films can significantly reduce needle-like surface recombination losses.


Nano Letters ◽  
2011 ◽  
Vol 12 (1) ◽  
pp. 440-445 ◽  
Author(s):  
Yang Wang ◽  
Tianyi Sun ◽  
Trilochan Paudel ◽  
Yi Zhang ◽  
Zhifeng Ren ◽  
...  

1999 ◽  
Vol 38 (Part 1, No. 9A) ◽  
pp. 4983-4988 ◽  
Author(s):  
Baosheng Sang ◽  
Koji Dairiki ◽  
Akira Yamada ◽  
Makoto Konagai

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