Optimization of surface reflectance for silicon solar cells
Keyword(s):
A study on the formation of black silicon (b-Si) antireflection layers on crystalline Si wafers using SF6/O2gas mixture in a reactive ion etching method is presented. The process is low-temperature, fast and does not depend on the crystallographic orientation of the Si wafer. The b-Si layers have demonstrated average reflectance values of 4% and 5% for monoand polycrystalline Si wafers respectively, feature that is suitable for the fabrication of high efficiency solar cells. Passivation of b-Si antireflection layers by suitable different thin films can significantly reduce needle-like surface recombination losses.
2013 ◽
Vol 750-752
◽
pp. 970-973
2013 ◽
Vol 205-206
◽
pp. 346-351
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1993 ◽
Vol 1
(2)
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pp. 133-143
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2013 ◽
Vol 750-752
◽
pp. 961-964
Keyword(s):
Keyword(s):
2021 ◽
Vol 24
(3)
◽
pp. 319-327