Analysis of Temperature Characteristics of an AlGaAs/GaAs/Ge Triple-Junction Solar Cell by IS

2013 ◽  
Vol 756-759 ◽  
pp. 101-104
Author(s):  
Yi Qing Zhang ◽  
Wen Jun Cao ◽  
Ai Min Liu
Keyword(s):  
Solar Cell ◽  
High Temperature ◽  
Impedance Spectroscopy ◽  
Low Temperature ◽  
Equivalent Circuit ◽  
Triple Junction ◽  
Temperature Characteristics ◽  
High Temperature Range ◽  
Temperature Range ◽  
Junction Solar Cell

Composition of an AlGaAs/GaAs/Ge triple-junction solar cell were analyzed using an equivalent circuit. The currentvoltage (IV) characteristics and impedance spectroscopy (IS) of it were measured in the temperature range from 20°C to 180°C. In the high-temperature range (from 140°C to 200°C) the VOCchanges faster than those in the low-temperature range (from 20°C to 80°C).This is because contribution of the VOCfrom the Ge subcell becomes nearly zero in the high temperature. R and C of the bottom subcell keep almost the same in the high temperature.

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

scholarly journals A Study of Isothermal Curing of PMI Using DMA

2015 ◽  
Vol 2015 ◽  
pp. 1-12
Author(s):  
Jing Zhang ◽  
Rui Ye ◽  
Jun Zou ◽  
Jijun Tang ◽  
Hongliang Wang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Nonequilibrium Thermodynamic ◽  
Fluctuation Theory ◽  
Avrami Equation ◽  
High Temperature Range ◽  
Dynamic Mechanical ◽  
Temperature Range ◽  
Thermodynamic Fluctuation ◽  
Relative Conversion

The isothermal curing of polymethacrylimide (PMI) is studied through the use of dynamic mechanical analysis (DMA). Based on the growth rate of measured dynamic mechanical property, the relative conversion is defined to investigate the evolution of storage modulusE′at different curing temperatures. Hsich’s nonequilibrium thermodynamic fluctuation theory, Avrami equation, and isoconversional methods are used to analyze isothermal cure kinetics of PMI. The results show that there are different increase modes ofE′at low temperature range and high temperature range, respectively. In low temperature range, the relative conversion curves include a transitional stage which is found to be strongly frequency-dependent, but this stage is not observed in the relative conversion curve in high temperature range. During the isothermal curing process, the relative evolution ofE′can be described by Hsich’s nonequilibrium thermodynamic fluctuation theory and Avrami equation. Moreover, the values and evolutions of activation energy are different in two temperature ranges, which suggest that the curing mechanism probably has changed.

Linear red/green ratiometric thermometry of Ho3+/Cr3+ co-doped red up-conversion tungstate materials

2021 ◽  
Author(s):  
Yan Zhao ◽  
Xusheng Wang ◽  
Rui Hu ◽  
Yanxia Li
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
High Sensitivity ◽  
Temperature Sensing ◽  
High Temperature Range ◽  
Temperature Range ◽  
Co Doped ◽  
Sensing Performance

Existing optical thermometers are faced with the challenges of high sensitivity limited to a very narrow high temperature range, while also lacking low temperature sensing performance. A new linear up-conversion...

Detailed Analysis of Temperature Characteristics of an InGaP/InGaAs/Ge Triple-Junction Solar Cell

2010 ◽  
Vol 39 (6) ◽  
pp. 704-708 ◽  
Author(s):  
Kensuke Nishioka ◽  
Tsuyoshi Sueto ◽  
Masaki Uchida ◽  
Yasuyuki Ota
Keyword(s):  
Solar Cell ◽  
Detailed Analysis ◽  
Triple Junction ◽  
Temperature Characteristics ◽  
Junction Solar Cell

Activation Energy for Recrystallization in Fe-3wt.%Si Alloys with Different S Contents

2013 ◽  
Vol 753 ◽  
pp. 181-184 ◽  
Author(s):  
Wei Min Mao ◽  
Mao Hua Zhang ◽  
Ping Yang ◽  
Kai Ping Wang
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
Low Temperature ◽  
Boundary Migration ◽  
Mechanical Calculation ◽  
High Temperature Range ◽  
Temperature Range ◽  
Cottrell Atmosphere

The recrystallization behaviors of 60% rolled Fe-wt.3%Si and Fe- wt.3%Si-Mn-S alloys containing coarsen MnS particles were observed in temperature range 600°C~1000°C. The activation energy for recrystallization was determined according to an Arrhenius type of relationship. It was found that the activation energy in the temperature range 600°C~750°C was much higher than that in the temperature range 850°C~1000°C. Thermo-mechanical calculation indicates that there are hardly precipitation behaviors of MnS particles in 600°C~1000°C. Fe3C will precipitate below 650°C and Cottrell atmosphere will form just above 650°C, which induces dragging effect against the boundary migration during recrystallization and increase the activation energy. The activation energy determined was about 99kJ/mol or 217kJ/mol in Fe-3%Si alloy and 91kJ/mol or 220kJ/mol in Fe-3%Si-Mn-S alloy for the recrystallization in high temperature range of 850°C~1000°C or low temperature range of 600°C~750°C respectively.

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