A Study of Thermal-Chemical Polishing for CVD Diamond Thin Films

Chemical vapor deposition (CVD) diamond thin films are widely used in modern industries. However, due to the nature of polycrystalline, thin films are required to be polished in the final process to increase its surface quality. Thermal-chemical polishing is known for its less processing time and low cost. In this paper, the experiments are carried out to observe the effect of processing conditions such as temperature, rotational speed, polishing pressure, and substrate material on the surface roughness and on the material removal rate of the chemical vapor deposition diamond (CVDD). At the same time, the processing mechanism for this thermal-chemical polishing is investigated, and a polishing model is built for comparison with the experiment results. The results show that the material removal rate is affected mainly by the diffusing rate in the Fe-C polishing system. By using the model, the approximate value of material removal rate can be calculated according to the polishing temperature.

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Formation of Nitrogen-Vacancy Centers in Homoepitaxial Diamond Thin Films Grown via Microwave Plasma-Assisted Chemical Vapor Deposition

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2016.2528678 ◽

2016 ◽

Vol 15 (4) ◽

pp. 614-618 ◽

Cited By ~ 3

Author(s):

Hideyuki Watanabe ◽

Hitoshi Umezawa ◽

Toyofumi Ishikawa ◽

Kazuki Kaneko ◽

Shinichi Shikata ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Plasma ◽

Chemical Vapor ◽

Nitrogen Vacancy ◽

Nitrogen Vacancy Centers ◽

Diamond Thin Films

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Synthesis of diamond thin films by atmospheric-pressure thermal chemical vapor deposition and their characterization.

Shinku ◽

10.3131/jvsj.30.60 ◽

1987 ◽

Vol 30 (2) ◽

pp. 60-68

Author(s):

Yoichi HIROSE ◽

Yuki TERASAWA ◽

Kazuya IWASAKI ◽

Katumi TAKAHASHI ◽

Kazuo TEZUKA

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Thermal Chemical Vapor Deposition ◽

Diamond Thin Films

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Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-423-655 ◽

1996 ◽

Vol 423 ◽

Author(s):

S. Mirzakuchaki ◽

H. Golestanian ◽

E. J. Charlson ◽

T. Stacy

Keyword(s):

Thin Films ◽

Activation Energy ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Polycrystalline Diamond ◽

Silicon Substrates ◽

Boron Doped Diamond ◽

Diamond Thin Films ◽

Hot Filament

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

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