A 10Gbps Limiting Amplifier for STM-64 Application Driver in 0.18μm CMOS Technology

2013 ◽  
Vol 760-762 ◽  
pp. 120-124
Author(s):  
Wen Yuan Li ◽  
Yu Bi

An inductorless circuit for limiting amplifiers is present. With the third-order interleaving active feedback, the bandwidth of this circuit could be enhanced while keeping a suppressed gain. The amplifier is simulation in a 0.18μm CMOS technology. The results show that the circuit consuming a DC power of 90mW with a 1.8V supply voltage, its voltage gain is about 42.6dB, the 3dB bandwidth of the circuit is 10.96GHz.The limiting amplifier circuit can be used in the STM-64 optical fiber communication system.

2012 ◽  
Vol 236-237 ◽  
pp. 958-963
Author(s):  
Ying Mei Chen ◽  
Tao Wang ◽  
Jin Fei Wang ◽  
Jian Wei Gong ◽  
Lei Zhu

This paper describes the design of a 40 Gb/s transimpedance amplifier (TIA) for high-density optical fiber communication system. This TIA incorporates modified regulated cascode (RGC), three order intersecting active feedback and passive feedback. Consuming a DC power of 14.5 mW, the single-ended circuit provides a transimpedance gain of 49.5 dB and a -3dB bandwidth up to 40 GHz in IBM 90-nm CMOS technology with a 1.2 V supply. Simulation results show the equivalent input noise current integrated from 1 MHz to 30 GHz is about 6.6 Arms


2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Gim Heng Tan ◽  
Roslina Mohd Sidek ◽  
Harikrishnan Ramiah ◽  
Wei Keat Chong ◽  
De Xing Lioe

This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm2.


2019 ◽  
Vol 364 ◽  
pp. 239-244 ◽  
Author(s):  
Tian-You Cheng ◽  
Da-Ya Chou ◽  
Ching-Chuan Liu ◽  
Ya-Ju Chang ◽  
Chii-Chang Chen

2007 ◽  
Vol 42 (5) ◽  
pp. 1111-1120 ◽  
Author(s):  
Huei-Yan Huang ◽  
Jun-Chau Chien ◽  
Liang-Hung Lu

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