intercept point
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2021 ◽  
Author(s):  
Utkarsh Upadhyay ◽  
Ashish Raman ◽  
RAVI RANJAN ◽  
Naveen Kumar

Abstract In this paper, the proposed design of H-shaped TFET has been discussed. This design is providing a high Ion/Ioff ratio with better Ion. HfO2 is used for better tunneling current. With this device, Different parameters such as unit parameter, analogue parameter, and linearity parameter have been studied and investigated the output of the H-TFET. As unit parameters, the electric field, electric potential, energy band diagram, and non-local band-to-band tunneling rate (BTBT) have all been observed. Second and third-order harmonics distortion (HD2, HD3), third-order current intercept point (IIP3), third-order intermodulation distortions (IMD3), and second and third-order voltage intercept point (VIP2, VIP3) are evaluated as linearity parameters that characterize the device's distortions and linearity. We obtained Ion\({\text{=1.6×}10}^{-4}\) A/µm, Ioff=2.1\({\text{×}10}^{-19}\) A/µm, Ion /Ioff=7.6\({\text{×}10}^{14}\),threshold voltage Vt=0.3449 V. © 2017 Elsevier Inc. All rights reserved.


2021 ◽  
Vol 13 (1) ◽  
pp. 44-50
Author(s):  
Vasilios N. Katsikis ◽  
Spyridon D. Mourtas

The tangency portfolio, also known as the market portfolio, is the most efficient portfolio and arises from the intercept point of the Capital Market Line (CML) and the efficient frontier. In this paper, a binary optimal tangency portfolio under cardinality constraint (BOTPCC) problem is defined and studied as a nonlinear programming (NLP) problem. Because such NLP problems are widely approached by heuristic, a binary beetle antennae search algorithm is employed to provide a solution to the BTPSCC problem. Our method proved to be a magnificent substitute to other evolutionary algorithms in real-world datasets, based on numerical applications and computer simulations.


Author(s):  
Jun-Yong Lee ◽  
Hyeong-Guen Kim ◽  
H Jin Kim

This article proposes an impact-time-control guidance law that can keep a non-maneuvering moving target in the seeker’s field of view (FOV). For a moving target, the missile calculates a predicted intercept point (PIP), designates the PIP as a new virtual stationary target, and flies to the PIP at the desired impact time. The main contribution of the article is that the guidance law is designed to always lock onto the moving target by adjusting the guidance gain. The guidance law for the purpose is based on the backstepping control technique and designed to regulate the defined impact time error. In this procedure, the desired look angle, which is a virtual control, is designed not to violate the FOV limit, and the actual look angle of the missile is kept within the FOV by tracking the desired look angle. To validate the performance of the guidance law, numerical simulation is conducted with different impact times. The result shows that the proposed guidance law intercepts the moving target at the desired impact time maintaining the target lock-on condition.


Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2711
Author(s):  
Shilpa Mehta ◽  
Xue-Jun Li ◽  
Massimo Donelli

A reconfigurable gm-boosted, image-rejected downconversion mixer is presented in this paper using the SiGe 8 HP technology. The proposed mixer operates within 0.9–13.5 GHz that is suitable for software-defined radio applications. The conversion mixer comprises of resistive biased radio frequency (RF) section, double balanced Gilbert cell mixer core sections divided as per I and Q stages for image-rejection purpose, inductively peaked gm-boosting section and tunable filter section, respectively. In comparison to previous works in the scientific literature, the design shows enhanced conversion gain (CG), noise figure (NF), and image-rejection ratio (IRR). For the entire band of operation, the mixer attains a good return loss |S11| of <−10 dB. Additionally, the design accomplishes an excellent CG of 22 dB, NF of 2.5 dB, and an image-rejection ratio of 30.2 dB at maximum frequency. Finally, a third-order intercept point (IP3) of −3.28 dBm and 1 dB compression point (CP1) of −13 dBm, respectively, shows moderate linearity performance.


2021 ◽  
Author(s):  
Neha Gupta ◽  
Aditya Jain ◽  
Ajay Kumar

Abstract This work investigates the suppressed distortion performance metrics of gate all around (GAA) Gallium Nitride (GaN)/Al2O3 Nanowire (NW) n-channel MOSFET (GaNNW/Al2O3 MOSFET) based on quantum numerical simulations at room temperature (300 K). The simulation results show high switching ratio (≈109) with low subthreshold swing (67mV/decade), high QF value (4.1mS-decade/mV) of GaNNW/Al2O3-MOSFET in comparison to GaNNW/SiO2 and SiNW MOSFET for Vds=0.4V due to the lower permittivity of GaN and more effective mass of the electron. Furthermore, linearity and distortion performance is also examined by numerically calculating transconductance and its higher derivatives (gm2 and gm3); voltage and current intercept point (VIP2, VIP3 and IIP3); 1-dB compression point; Harmonics distortions (HD2 and HD3) and IMD3. All these parameters show high linearity and low distortion at zero crossover point (where gm3=0) in GaNNW/Al2O3 MOSFET. Thus, GaNNW MOSFET can be considered as a promising candidate for low power high-performance applications. In addition, effect of ambient temperature (250K-450K) on the performance of GaNNW/Al2O3 is studied and discussed in terms of the above mentioned metrics. It is very well exhibited that SS, Ion, Vth, and QF improved when the temperature is lowered which makes it suitable for low-temperature environments. But, linearity degrades as the temperature lowers down.


Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 546
Author(s):  
Cheng Cao ◽  
Xiuping Li ◽  
Yubing Li ◽  
Hongjie Zeng ◽  
Zhe Wang ◽  
...  

This work proposes a novel linearized low noise amplifier (LNA) for X-band applications with flat power gain, low noise performance and enhanced linearity. In this study, a triple-cascode topology with dual-resonant network is utilized and a modified post-distortion network is introduced to improve the linearity. The LNA utilizes a subthreshold auxiliary NMOS transistor to reduce the nonlinearity with low power consumption. In addition, a methodology is proposed to predict the characteristic of the linearity performance of the proposed LNA with modified post-distortion network. With a small increase of 1 mW in power consumption due to the inclusion of the post-distortion network, the input intercept point IIP3 is improved and lies in the range of −3 to +8 dBm over the frequency range from 8 to 12 GHz. Implemented in Global Foundries 130 nm CMOS process, the LNA achieves a peak gain of 18 dB, and a 1.3 dB minimum NF over 8 to 12 GHz. The proposed LNA requires an area of 1.2 mm2 and a power of 18 mW.


Author(s):  
Abishek Umashankar ◽  
Lakshmanabharathi R ◽  
C Pachaiappan ◽  
Prashanth Prabhu

Background and Aim: The threshold of octave masking test has been used to assess the growth rate of aural harmonics, the intercept point helped differentiate between normal-hearing individuals and sensorineural hearing loss due to noise exposure. With fewer literatures that have been documented, there is a need to explore this test procedure, and hence the purpose of this research is to evaluate the utility of the threshold of octave masking (TOM) procedure in understanding the frequency selectivity and non-linear function of cochlea. Methods: A total of 10 adults (20 ears) were considered for the test. The TOM test procedure was performed on the subjects where the subjects had to identify the presence of a maskee tone (1 kHz) in the presence of a masker tone (500 Hz) across 5 dB increment of masker tone until the subjects uncomfortable level. A line graph was drawn, extrapolated to identify the point of intercept, which is the threshold of octave masking. Results: Results reveal that 17 ears did not have a linear growth but had a 10 to 20 dB gap after a particular maskee level. The intercept point of the initial two extreme points was relatively more than the intercept point of the extreme points at higher intensities. Conclusion: Results from the present study have thrown light on the fact that TOM can be used as a test to measure the frequency selectivity along with the tests of psychophysical tuning curves, notched noise method, non-simultaneous masking, and other non-peripheral masking phenomena. Keywords: Threshold of octave masking; active mechanism; passive mechanism; nonlinearity;frequency selectivity; psychophysical tuning curves  


Author(s):  
Prapto Nugroho ◽  
Ivan Muhammad Ihsan Izetbegovic ◽  
Wahyu Dewanto

This paper presents a design and prototyping of a Low-Noise Amplifier (LNA) for Wireless Regional Area Network (WRAN) operating in TV broadcast bands between 54 MHz – 88 MHz. The LNA design was then implemented by using discrete components. Components values was obtained by utilized DC analysis according to specifications which follows the Institute of Electrical and Electronics Engineering (IEEE) 802.22 standard on WRAN technical specifications. Simulation with 88 MHz produced S11 = -5.72 dB, S12 = -41.57 dB, S21 = 15.07 dB, S22 = -4.76 dB, Noise Figure (NF) = 3.9 dB, Input Third Order Intercept Point (IIP3) = 2.21 dBm, and power consumption of 45.39 mW. Experiments results on 88 MHz showed S11 = -6.13 dB and S21 = 0.74 dB.


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