Fabrication and Residual Stresses of Aluminum Nitride Ceramics Sintered at High-Pressure

2009 ◽  
Vol 79-82 ◽  
pp. 2215-2218
Author(s):  
Xiao Lei Li ◽  
Shang Sheng Li ◽  
Hong An Ma ◽  
Xiao Peng Jia
Keyword(s):  
Raman Spectroscopy ◽  
High Pressure ◽  
Residual Stresses ◽  
Aluminum Nitride ◽  
Compression Stress ◽  
Sintering Additives ◽  
Micro Raman Spectroscopy ◽  
Sintering Time ◽  
Nitride Ceramics ◽  
Residual Compression

High-density AlN ceramics were fabricated without sintering additives at high pressure (5.0 GPa) and temperature (1300-1700 °C). The sintered bodies were characterized by XRD and micro-Raman spectroscopy (MRS). The values of residual stresses due to the distortion of the AlN lattice were assessed using the Micro-Raman Spectroscopy (MRS). Residual compression stress of the AlN ceramics sintered at 5.0 GPa and 1700 °C for 125 min is -2.0 GPa. The residual compression stress increased according to the extension of the sintering time.

Effect of High Pressure Annealing on Microstructure and Thermal Conductivity of Aluminum Nitride Ceramics

2010 ◽  
Vol 25 (5) ◽  
pp. 537-540 ◽  
Author(s):  
Xiao-Lei LI ◽  
De-You LI ◽  
Li-Ying WANG ◽  
Shang=Sheng LI ◽  
Tai-Chao SU ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Pressure ◽  
Aluminum Nitride ◽  
Nitride Ceramics

Residual Stresses in Tungsten Lines: Analysis of Experimental- (Micro-Raman Spectroscopy, Xrd) and Numerical Results

1995 ◽  
Vol 391 ◽  
Author(s):  
I. De Wolf ◽  
H.E. Maes ◽  
J. Moffet ◽  
M. Ignat
Keyword(s):  
Raman Spectroscopy ◽  
Residual Stresses ◽  
Theoretical Models ◽  
Numerical Results ◽  
Analytical Modelling ◽  
Experimental Techniques ◽  
Force Model ◽  
Micro Raman Spectroscopy ◽  
Stress Components ◽  
Edge Force

AbstractMicro-Raman spectroscopy, XRD, and analytical modelling are used to study stresses in and surrounding tungsten lines of different widths and spacing. The stress in the lines and in the adjacent substrate is calculated using a concentrated- and a distributed edge force model. Both models are adapted such that the substrate-stress components can also be calculated for an array of lines. The results from XRD and micro-Raman spectroscopy and the results from the distributed edge force model are in agreement. The combination of data from the two experimental techniques is shown to give some important feed-back to the theoretical models.

scholarly journals Corrosion Resistance of Aluminum Nitride as Semiconductor Equipment Parts Studied by Micro-Raman Spectroscopy

2003 ◽  
Vol 111 (1300) ◽  
pp. 935-938 ◽  
Author(s):  
Hirotaka FUJIMORI ◽  
Yoji TAMURA ◽  
Akira HARITA ◽  
Koji IOKU ◽  
Masato KAKIHANA ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Corrosion Resistance ◽  
Aluminum Nitride ◽  
Micro Raman Spectroscopy

The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films

1999 ◽  
Vol 595 ◽  
Author(s):  
M. Kuball ◽  
J.M. Hayes ◽  
T. Suski ◽  
J. Jun ◽  
H.H. Tan ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Pressure ◽  
Surface Layer ◽  
High Temperature ◽  
Structural Quality ◽  
High Temperature Annealing ◽  
Micro Raman Spectroscopy ◽  
High Pressure High Temperature ◽  
Different Temperatures ◽  
Ion Implanted

AbstractWe have investigated the high-pressure high-temperature annealing of Mg/P-implanted GaN films using visible and ultraviolet (UV) micro-Raman spectroscopy. The results illustrate the use of Raman spectroscopy to monitor processing of GaN where fast feedback is required. The structural quality and the stress in ion-implanted GaN films was monitored in a 40nm-thin surface layer of the sample as well as averaged over the sample layer thickness. We find the nearly full recovery of the crystalline quality of ion-implanted GaN films after annealing at 1400-1500°C under nitrogen overpressures of 1.5GPa. No significant degradation effects occurred in the GaN surface layer during the annealing. The high nitrogen overpressures proved very effective in preventing the nitrogen out-diffusion from the GaN surface. Stress introduced during the annealing was monitored. Raman spectra of ion-implanted GaN films were investigated at different temperatures and excitation wavelengths to study the GaN phonon density of states.

scholarly journals Preliminary data for melt inclusions in garnet porphyroblasts from Ograzhden metapelites, SW Bulgaria

2020 ◽  
Vol 81 (3) ◽  
pp. 84-86
Author(s):  
Lyubomira Macheva
Keyword(s):  
Raman Spectroscopy ◽  
High Pressure ◽  
Melt Inclusions ◽  
High Grade ◽  
Crystal Shape ◽  
Garnet Porphyroblasts ◽  
High Pressure Metamorphism ◽  
Micro Raman Spectroscopy ◽  
Negative Crystal ◽  
Crystallographic Orientations

Micro-inclusions in garnet porphyroblasts from high-grade Ograzhden metapelites, SW Bulgaria, have been studied by SEM and micro-Raman Spectroscopy. Micro-inclusions are presented by single grains with facetted outlines parallel to rational crystallographic orientations of the host garnet or by multiphase aggregates with negative crystal shape. Many of studied micro-inclusions can be formed by the presence of melt. The morphology of some of them suggests formation under high pressure metamorphism.

scholarly journals The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High Temperature Annealing of Ion-Implanted GaN Films

2000 ◽  
Vol 5 (S1) ◽  
pp. 740-746
Author(s):  
M. Kuball ◽  
J.M. Hayes ◽  
T. Suski ◽  
J. Jun ◽  
H.H. Tan ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Pressure ◽  
Surface Layer ◽  
High Temperature ◽  
Structural Quality ◽  
High Temperature Annealing ◽  
Micro Raman Spectroscopy ◽  
High Pressure High Temperature ◽  
Different Temperatures ◽  
Ion Implanted

We have investigated the high-pressure high-temperature annealing of Mg/P-implanted GaN films using visible and ultraviolet (UV) micro-Raman spectroscopy. The results illustrate the use of Raman spectroscopy to monitor processing of GaN where fast feedback is required. The structural quality and the stress in ion-implanted GaN films was monitored in a 40nm-thin surface layer of the sample as well as averaged over the sample layer thickness. We find the nearly full recovery of the crystalline quality of ion-implanted GaN films after annealing at 1400-1500°C under nitrogen overpressures of 1.5GPa. No significant degradation effects occurred in the GaN surface layer during the annealing. The high nitrogen overpressures proved very effective in preventing the nitrogen out-diffusion from the GaN surface. Stress introduced during the annealing was monitored. Raman spectra of ion-implanted GaN films were investigated at different temperatures and excitation wavelengths to study the GaN phonon density of states.

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