Residual Stresses in Tungsten Lines: Analysis of Experimental- (Micro-Raman Spectroscopy, Xrd) and Numerical Results

1995 ◽  
Vol 391 ◽  
Author(s):  
I. De Wolf ◽  
H.E. Maes ◽  
J. Moffet ◽  
M. Ignat
Keyword(s):  
Raman Spectroscopy ◽  
Residual Stresses ◽  
Theoretical Models ◽  
Numerical Results ◽  
Analytical Modelling ◽  
Experimental Techniques ◽  
Force Model ◽  
Micro Raman Spectroscopy ◽  
Stress Components ◽  
Edge Force

AbstractMicro-Raman spectroscopy, XRD, and analytical modelling are used to study stresses in and surrounding tungsten lines of different widths and spacing. The stress in the lines and in the adjacent substrate is calculated using a concentrated- and a distributed edge force model. Both models are adapted such that the substrate-stress components can also be calculated for an array of lines. The results from XRD and micro-Raman spectroscopy and the results from the distributed edge force model are in agreement. The combination of data from the two experimental techniques is shown to give some important feed-back to the theoretical models.

Variation of Local Mechanical Stress During the Different Processing Steps of Ic-Isolation: a Micro-Raman Spectroscopy Study

1993 ◽  
Vol 308 ◽  
Author(s):  
Ingrid De Wolf ◽  
Herman E. Maes ◽  
Hans Norström
Keyword(s):  
Raman Spectroscopy ◽  
Integrated Circuits ◽  
Mechanical Stress ◽  
Local Variation ◽  
Micro Raman Spectroscopy ◽  
Induced Stress ◽  
Last Stage ◽  
Edge Force ◽  
Field Oxide ◽  
Processing Steps

ABSTRACTLocal mechanical stress introduced in the silicon substrate during the successive steps of poly-buffered local isolation of MOS integrated circuits is studied with micro-Raman spectroscopy. It is shown that the magnitude and the local variation of the stress is highly affected by the different processing steps. After deposition of the nitride mask, the stress can be described as caused by an edge-force. Field oxidation reduces the mask-induced stress but introduces thermal stress from the field oxide. Also the formation of the bird's beak gives rise to additional local tensile stress, especially at the tip of the bird's beak. Removal of the nitride mask results in a partial relaxation: the stress caused by the bird's beak relaxes. In this last stage of the isolation process, the stress image is mostly determined by the field oxide.

scholarly journals Super-Resolution Raman Spectroscopy by Digital Image Processing

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Motohiro Tomita ◽  
Hiroki Hashiguchi ◽  
Takuya Yamaguchi ◽  
Munehisa Takei ◽  
Daisuke Kosemura ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Spatial Resolution ◽  
Numerical Aperture ◽  
Super Resolution ◽  
Force Model ◽  
Stress Distributions ◽  
Si Substrate ◽  
Resolution Method ◽  
Strained Si ◽  
Edge Force

We demonstrate the results of a strain (stress) evaluation obtained from Raman spectroscopy measurements with the super-resolution method (the so-called super-resolution Raman spectroscopy) for a Si substrate with a patterned SiN film (serving as a strained Si sample). To improve the spatial resolution of Raman spectroscopy, we used the super-resolution method and a high-numerical-aperture immersion lens. Additionally, we estimated the spatial resolution by an edge force model (EFM) calculation. One- and two-dimensional stress distributions in the Si substrate with the patterned SiN film were obtained by super-resolution Raman spectroscopy. The results from both super-resolution Raman spectroscopy and the EFM calculation were compared and were found to correlate well. The best spatial resolution, 70 nm, was achieved by super-resolution Raman measurements with an oil immersion lens. We conclude that super-resolution Raman spectroscopy is a useful method for evaluating stress in miniaturized state-of-the-art transistors, and we believe that the super-resolution method will soon be a requisite technique.

Phase and Mechanical Stress in and Surrounding Tisi2 and Cosi2 Lines Studied by Micro-Raman Spectroscopy

1996 ◽  
Vol 427 ◽  
Author(s):  
I. De Wolf ◽  
D. J. Howard ◽  
K. Maex ◽  
H. E. Maes
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Line Width ◽  
Silicon Substrate ◽  
Local Information ◽  
Stress Model ◽  
Micro Raman Spectroscopy ◽  
Stress Components ◽  
Line Spacing ◽  
Simple Stress

AbstractThe local mechanical stress induced in a silicon substrate by silicide lines (CoSi2, CoSi, C49 and C54 TiSi2) with different thicknesses, widths and spacings is studied using micro-Raman spectroscopy. The results show that the stress becomes larger with increasing line thickness and decreasing line spacing. For the different silicides, the stress increases according to: CoSi < CoSi2 < C49 TiSi2 < C54 TiSi2. By fitting a simple stress model to the Raman data, quantitative values for the stress components can be determined. The dependence of the TiSi2 phase on thickness and line width is studied for the same samples. These studies show that micro-Raman spectroscopy can provide local information (μm resolution) on the TiSi2 phase.

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