Advance of Ge/Si Quantum Dot Infrared Photodetector
Keyword(s):
The generation of quantum dots (QDs), the advantages and disadvantages of quantum dot infrared photodetector (QDIP) are briefly reviewed. Typical techniques for fabricating ordered Ge/Si QDs, the application of Ge/Si QDIP in optical communication and thermal imaging and the structure optimization are described. Finally, the key problems for improving the properties of Ge/Si QDs and Ge/Si QDIP, future trends and prospects are discussed.
1999 ◽
Vol 38
(Part 1, No. 4B)
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pp. 2559-2561
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Keyword(s):
Keyword(s):
2006 ◽
2002 ◽
Vol 20
(3)
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pp. 1185
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2005 ◽
Vol 23
(3)
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pp. 1129
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Keyword(s):
2016 ◽
Vol 28
(4)
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pp. 441-444
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