Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2559-2561 ◽  
Author(s):  
Naoto Horiguchi ◽  
Toshiro Futatsugi ◽  
Yoshiaki Nakata ◽  
Naoki Yokoyama ◽  
Tanaya Mankad ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Infrared Photodetector ◽  
Quantum Dot Infrared Photodetector ◽  
Self Assembled

Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded in Modulation-Doped GaAs Quantum Wells

1999 ◽  
Vol 607 ◽  
Author(s):  
Seung-Woong Lee ◽  
Kazuhiko Hirakawa ◽  
Yozo Shimada
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
High Mobility ◽  
Normal Incidence ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Operation Temperature ◽  
Long Lifetime ◽  
Quantum Dot Infrared Photodetector ◽  
Self Assembled

AbstractWe have designed and fabricated a quantum dot infrared photodetector which utilizes lateral transport of photoexcited carriers in the modulation-doped A1GaAs/GaAs two-dimensional (2D) channels. A broad photocurrent signal has been observed in the photon energy range of 100–300 meV due to bound-to-continuum intersubband absorption of normal incidence radiation in the self-assembled InAs quantum dots. A peak responsivity was as high as 2.3 A/W. The high responsivity is realized mainly by a high mobility and a long lifetime of photoexcited carriers in the modulation-doped 2D channels. Furthermore, we found that this device has high operation temperature and very high photoconductive gain.

Advance of Ge/Si Quantum Dot Infrared Photodetector

2013 ◽  
Vol 873 ◽  
pp. 799-808
Author(s):  
Peng He ◽  
Chong Wang ◽  
Jie Yang ◽  
Yu Yang
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Optical Communication ◽  
Thermal Imaging ◽  
Structure Optimization ◽  
Future Trends ◽  
Infrared Photodetector ◽  
Advantages And Disadvantages ◽  
Si Quantum Dot ◽  
Quantum Dot Infrared Photodetector

The generation of quantum dots (QDs), the advantages and disadvantages of quantum dot infrared photodetector (QDIP) are briefly reviewed. Typical techniques for fabricating ordered Ge/Si QDs, the application of Ge/Si QDIP in optical communication and thermal imaging and the structure optimization are described. Finally, the key problems for improving the properties of Ge/Si QDs and Ge/Si QDIP, future trends and prospects are discussed.

High-performance 30-period quantum-dot infrared photodetector

2005 ◽  
Vol 23 (3) ◽  
pp. 1129 ◽  
Author(s):  
Shu-Ting Chou ◽  
Shih-Yen Lin ◽  
Ru-Shang Hsiao ◽  
Jim-Yong Chi ◽  
Jyh-Shyang Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Infrared Photodetector ◽  
Quantum Dot Infrared Photodetector

A LWIR quantum dot infrared photodetector working at 298K

2010 ◽  
Author(s):  
Jarrod Vaillancourt ◽  
Puminun Vasinajindakaw ◽  
Wen Hong ◽  
Xuejun Lu ◽  
Xifeng Qian ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetector ◽  
Quantum Dot Infrared Photodetector

Bias-selectable tricolor tunneling quantum dot infrared photodetector for atmospheric windows

2008 ◽  
Vol 92 (11) ◽  
pp. 111104 ◽  
Author(s):  
G. Ariyawansa ◽  
V. Apalkov ◽  
A. G. U. Perera ◽  
S. G. Matsik ◽  
G. Huang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetector ◽  
Quantum Dot Infrared Photodetector ◽  
Atmospheric Windows
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