Recent Advances in Defect Characterization in 6H-SiC Using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy

2000 ◽  
Vol 183-185 ◽  
pp. 1-24
Author(s):  
C.C. Ling ◽  
C.D. Beling ◽  
M. Gong ◽  
X.D. Chen ◽  
S. Fung
Keyword(s):  
Positron Annihilation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Positron Annihilation Spectroscopy ◽  
Defect Characterization ◽  
Recent Advances ◽  
Transient Spectroscopy

Point Defects in Gallium Arsenide Characterized by Positron Annihilation Spectroscopy and Deep Level Transient Spectroscopy

1994 ◽  
Vol 373 ◽  
Author(s):  
R. Mih ◽  
R. Gronsky
Keyword(s):  
Gallium Arsenide ◽  
Positron Annihilation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Czochralski Method ◽  
Positron Annihilation Spectroscopy ◽  
Crystallographic Data ◽  
Electrical Measurements ◽  
Vacancy Defects ◽  
Transient Spectroscopy

AbstractPositron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. We present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot- Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data.

Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors

2004 ◽  
Vol 85 (3) ◽  
pp. 413-415 ◽  
Author(s):  
H. Fujioka ◽  
T. Sekiya ◽  
Y. Kuzuoka ◽  
M. Oshima ◽  
H. Usuda ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect Characterization ◽  
Transient Spectroscopy

Vacancies and deep levels in electron-irradiated 6HSiC epilayers studied by positron annihilation and deep level transient spectroscopy

2001 ◽  
Vol 90 (7) ◽  
pp. 3377-3382 ◽  
Author(s):  
A. Kawasuso ◽  
F. Redmann ◽  
R. Krause-Rehberg ◽  
T. Frank ◽  
M. Weidner ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

Deep Level Transient Spectroscopy: Defect Characterization in Semiconductor Devices

1986 ◽  
Vol 69 ◽  
Author(s):  
N. M. Johnson
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Semiconductor Devices ◽  
Defect Characterization ◽  
Electronic Defect ◽  
Transient Spectroscopy

AbstractThe use of deep-level transient spectroscopy for electronic defect characterization in semiconductors is reviewed with emphasis on the underlying principles and concepts.

Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

2002 ◽  
Vol 389-393 ◽  
pp. 489-492 ◽  
Author(s):  
Atsuo Kawasuso ◽  
Michael Weidner ◽  
F. Redmann ◽  
Thomas Frank ◽  
Reinhard Krause-Rehberg ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects
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