Low rate deep level transient spectroscopy - a powerful tool for defect characterization in wide bandgap semiconductors

2014 ◽  
Vol 92 ◽  
pp. 40-46 ◽  
Author(s):  
Florian Schmidt ◽  
Holger von Wenckstern ◽  
Otwin Breitenstein ◽  
Rainer Pickenhain ◽  
Marius Grundmann
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Wide Bandgap ◽  
Defect Characterization ◽  
Wide Bandgap Semiconductors ◽  
Bandgap Semiconductors ◽  
Transient Spectroscopy ◽  
Low Rate

Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors

2004 ◽  
Vol 85 (3) ◽  
pp. 413-415 ◽  
Author(s):  
H. Fujioka ◽  
T. Sekiya ◽  
Y. Kuzuoka ◽  
M. Oshima ◽  
H. Usuda ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect Characterization ◽  
Transient Spectroscopy

Deep Level Transient Spectroscopy: Defect Characterization in Semiconductor Devices

1986 ◽  
Vol 69 ◽  
Author(s):  
N. M. Johnson
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Semiconductor Devices ◽  
Defect Characterization ◽  
Electronic Defect ◽  
Transient Spectroscopy

AbstractThe use of deep-level transient spectroscopy for electronic defect characterization in semiconductors is reviewed with emphasis on the underlying principles and concepts.

Deep level transient spectroscopy investigation of ultra-wide bandgap (2̄01) and (001) β-Ga2O3

2020 ◽  
Vol 128 (20) ◽  
pp. 205701
Author(s):  
Jossue Montes ◽  
Cameron Kopas ◽  
Hong Chen ◽  
Xuanqi Huang ◽  
Tsung-han Yang ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Wide Bandgap ◽  
Transient Spectroscopy

Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices

2018 ◽  
Vol 47 (9) ◽  
pp. 4980-4986 ◽  
Author(s):  
L. J. Brillson ◽  
G. M. Foster ◽  
J. Cox ◽  
W. T. Ruane ◽  
A. B. Jarjour ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Defect Characterization ◽  
Wide Bandgap Semiconductors ◽  
Bandgap Semiconductors ◽  
And Control

Charge-Based Deep Level Transient Spectroscopy of Semiconducting and Insulating Materials

2001 ◽  
Vol 699 ◽  
Author(s):  
V.I. Polyakov ◽  
A.I. Rukovishnokov ◽  
N.M. Rossukanyi ◽  
B. Druz
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Polycrystalline Diamond ◽  
Wide Bandgap ◽  
Insulating Materials ◽  
Si Substrates ◽  
Boron Doped ◽  
Trapping Centers ◽  
Transient Spectroscopy ◽  
Rate Window

AbstractThe opportunity of the charge-based deep level transient spectroscopy (Q-DLTS) for study of the structures based on wide bandgap semiconducting and insulating materials such as diamond and Al2O3 was demonstrated. Using our isothermal Q-DLTS method with rate window (tm)scanning we obtained information about concentration, activation energy and capture cross-section of the native and extrinsic electrical active defects - trapping centers (TC) in slightly boron-doped polycrystalline diamond, diamond single-crystal and in the structures Al2O3 film on NiFe and Si substrates. In comparison with widely used capacitance-based deep level transient spectroscopy, Q-DLTS gives one possibility to investigate the structures in which a capacitance does not depend on the charge state of the surface and bulk traps.

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