Deep Level Transient Spectroscopy: Defect Characterization in Semiconductor Devices
Keyword(s):
AbstractThe use of deep-level transient spectroscopy for electronic defect characterization in semiconductors is reviewed with emphasis on the underlying principles and concepts.
2000 ◽
Vol 183-185
◽
pp. 1-24
1984 ◽
Vol 33
(4)
◽
pp. 259-263
◽