Use of OSL and TL of Electronic Components of Portable Devices for Retrospective Accident Dosimetry

Growing apprehensions of radiological accidents and terroristic attacks have intensified research efforts to find materials with appropriate radiation sensitivity that are carried close to human body, are ubiquitously available and which can be used as fortuitous dosimeters in rapid determination of doses of individuals after radiation exposure. In this respect, thermoluminescence (TL) and optically stimulated luminescence (OSL) of chip cards and electronic components of personal objects have been recently evaluated by researchers in several countries. OSL and TL signal of chip cards is attributed to SiO2 grains contained in the epoxy layers used for controlling the thixotropic properties whereas the radiation induced signal in electronic components (resistors, resonators, capacitors, ICs, antenna switches, etc.) of personal objects (mobile phones, USB flash drive, MP3 players, etc.) is attributed to the ceramic contents, especially to Al2O3 based substrates.

Download Full-text

DENTAL ENAMEL EPR DOSIMETRY: COMPARATIVE TESTING OF THE SPECTRA PROCESSING METHODS FOR DETERMINATION OF RADIATION-INDUCED SIGNAL AMPLITUDE

Health Physics ◽

10.1097/hp.0000348462.29306.59 ◽

2010 ◽

Vol 98 (2) ◽

pp. 345-351 ◽

Cited By ~ 13

Author(s):

A I. Ivannikov ◽

D Sanin ◽

M Nalapko ◽

V F. Skvortsov ◽

V F. Stepanenko ◽

...

Keyword(s):

Dental Enamel ◽

Signal Amplitude ◽

Comparative Testing ◽

Processing Methods ◽

Epr Dosimetry ◽

Radiation Induced ◽

Spectra Processing ◽

Induced Signal

Download Full-text

Radiation-Induced-Defects Localization in Single-Mode Optical Fibers

Materials Science Forum ◽

10.4028/www.scientific.net/msf.480-481.329 ◽

2005 ◽

Vol 480-481 ◽

pp. 329-332 ◽

Cited By ~ 1

Author(s):

Sylvain Girard ◽

A. Boukenter ◽

Y. Ouerdane ◽

J.-P. Meunier

Keyword(s):

Optical Fibers ◽

Single Mode ◽

Wavelength Dependence ◽

Radiation Sensitivity ◽

Color Centers ◽

Strong Interactions ◽

Radiation Induced ◽

Different Color ◽

Induced Defects

We studied the defects at the origins of the permanent radiation-induced attenuation in four g-rays irradiated single-mode germanosilicate optical fibers (~1 MeV; 1.2 kGy; 0.3 Gy/s) in the spectral range 400 - 1700 nm. We determined the wavelength dependence of the following cladding codopant influences: germanium (0.3 %), phosphorus (0.3 %), fluorine (0.3 %) on the germanosilicate (13 %) fiber radiation responses. We identified some of the different color centers produced by g-rays and we evaluated their localization in the fiber cross-section through the determination of the radial distribution of the radiation-induced absorption at 633 nm. We also evidenced the strong interactions between these three codopants. In particular, our results showed that the properties of the phosphorus-related color centers, which mainly determine the fiber infrared radiation sensitivity, are strongly influenced by the germanium- and fluorine-codoping.

Download Full-text

Thermoluminescence of electronic components from mobile phones for determination of accident doses

Radiation Measurements ◽

10.1016/j.radmeas.2017.07.002 ◽

2017 ◽

Vol 104 ◽

pp. 13-21 ◽

Cited By ~ 5

Author(s):

Janet Ayobami Ademola ◽

Clemens Woda

Keyword(s):

Mobile Phones ◽

Electronic Components

Download Full-text

Weak Beam Imaging and Diffraction Studies of Stacking Faults in Silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100092918 ◽

1976 ◽

Vol 34 ◽

pp. 590-591

Author(s):

T. Y. Tan ◽

W. K. Tice

Keyword(s):

Fast Neutron ◽

Rapid Determination ◽

Stacking Faults ◽

Imaging Method ◽

Large Reduction ◽

Dislocation Loops ◽

Fringe Spacing ◽

Weak Beam ◽

Kinematical Theory

In studying ion implanted semiconductors and fast neutron irradiated metals, the need for characterizing small dislocation loops having diameters of a few hundred angstrom units usually arises. The weak beam imaging method is a powerful technique for analyzing these loops. Because of the large reduction in stacking fault (SF) fringe spacing at large sg, this method allows for a rapid determination of whether the loop is faulted, and, hence, whether it is a perfect or a Frank partial loop. This method was first used by Bicknell to image small faulted loops in boron implanted silicon. He explained the fringe spacing by kinematical theory, i.e., ≃l/(Sg) in the fault fringe in depth oscillation. The fault image contrast formation mechanism is, however, really more complicated.

Download Full-text