Diffusion Rates of Components in Metal-Silicides Depending on Atomic Number of Refractory Metal Component

2019 ◽  
Vol 21 ◽  
pp. 29-84
Author(s):  
Aloke Paul
Keyword(s):  
Atomic Number ◽  
Refractory Metal ◽  
Diffusion Coefficients ◽  
Annealing Temperature ◽  
Tracer Diffusion ◽  
Refractory Component ◽  
Metal Silicides ◽  
Antisite Defects ◽  
Diffusion Rates ◽  
Tracer Diffusion Coefficients

Interdiffusion studies conducted in group IVB, VB and VIB metal-silicon systems are discussed in detail to show a pattern in the change of diffusion coefficients with the change in atomic number of the refractory metal (M) component. MSi2and M5Si3phases are considered for these discussions. It is shown that integrated diffusion coefficients increase with the increase in atomic number of the refractory component when the data are plotted with respect to the melting point normalized annealing temperature. This indicates the increase in overall defect concentration facilitating the diffusion of components. This is found to be true in both the phases. Additionally, the estimated ratios of tracer diffusion coefficients indicate the change in concentration of antisite defects in certain manner with the change in atomic number of the refractory components.

Non-Stoichiometry and Cation Tracer Diffusion Studies in the Magnetite-UlvÖSpinel Solution, (Fe,Ti)3-δO4

1994 ◽  
Vol 369 ◽  
Author(s):  
Sanjeev Aggarwal ◽  
Rudiger Dieckmann
Keyword(s):  
Diffusion Coefficients ◽  
Tracer Diffusion ◽  
Oxygen Activity ◽  
Spinel Solid Solution ◽  
Low Oxygen ◽  
Cation Diffusion ◽  
Deviation From Stoichiometry ◽  
Diffusion Studies ◽  
Tracer Diffusion Coefficients ◽  
Point Defect Structure

AbstractCation diffusion in the spinel solid solution (Fe1-xTix)3-δO4 (0≤ x ≤ 0.3) was investigated at 1200 ºC as a function of oxygen activity, aO2 and cationic composition, x. At different cationic compositions, cation tracer diffusion coefficients, D*Me of Me = Fe and Ti were measured as a function of oxygen activity. Plots of log DMe vs. loga0 show V-shaped curves, indicating that different types of point defects prevail at high anc low oxygen activities. Thermogravimetric experiments were conducted, using a high resolution microbalance, to determine the deviation from stoichiometry in (Fe1-xTix)3-δO4 at 1200 °C. δversus log aO2 curves are S-shaped. An analysis of the oxygen activity dependences of thecation diffusion coefficients and the deviation from stoichiometry with regardto the point defect structure suggests that at high oxygen activities cation vacancies are the predominant defects governing the deviation from stoichiometry and the diffusion ofcations. At low oxygen activities, and at small values of x, cation interstitials determine the deviation from stoichiometry, while they dominate for 0 ≤ x ≤ 0.3 inthe cation diffusion.

An Overview of the Interdiffusion Studies in Mo-Si and W-Si Systems

2014 ◽  
Vol 354 ◽  
pp. 79-83
Author(s):  
Soumitra Roy ◽  
Soma Prasad ◽  
Aloke Paul
Keyword(s):  
Crystal Structures ◽  
Atomic Number ◽  
Diffusion Coefficients ◽  
Relative Increase ◽  
The Other ◽  
Reactive Diffusion ◽  
Refractory Elements ◽  
Other Hand ◽  
Two Systems ◽  
Diffusion Rates

The growth of phases by reactive diffusion in Mo-Si and W-Si systems are compared. The crystal structures of MSi2 and M5Si3 phases (M = Mo, W) are similar in these two systems. However, the diffusion rates of the components change systematically with a change in the atomic number. Integrated diffusion coefficients in both phases increase with an increasing atomic number of refractory elements i.e. from Mo to W. On the other hand, the ratio of diffusivities of the components decreases. This indicates a relative increase in the diffusion rates of the metal components with increasing atomic number and a difference in defects concentrations in these two systems.

Oxygen diffusion in amorphous and partially crystalline gallium oxide

2019 ◽  
Vol 21 (8) ◽  
pp. 4268-4275 ◽  
Author(s):  
Alexandra von der Heiden ◽  
Manuel Bornhöfft ◽  
Joachim Mayer ◽  
Manfred Martin
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficients ◽  
Low Temperatures ◽  
Oxygen Diffusion ◽  
Gallium Oxide ◽  
Tracer Diffusion ◽  
Tof Sims ◽  
Tracer Diffusion Coefficients ◽  
Oxygen Tracer

We established a TTT diagram of crystallisation of gallium oxide. Determination of oxygen tracer diffusion coefficients by IEDP/ToF-SIMS allowed us to access the activation energy for amorphous GaO1.5 at low temperatures.

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