Electrical characteristics of silicon differential photoreceivers

The volt-ampere curve of silicon differential photodiodes were measured. It was found that the current-voltage curve of the photodiodes of the main and additional channels had a similar shape, without revealing a significant dependence on the implantation dose of the additional channel. The main parameters of the equivalent circuits of photodiodes are determined. In the reverse branch, the dominant impact was exerted by the surface leakage conductivity with a differential resistance of about 10 GΩ. Measurements from minus 60 °C to 60 °C showed that when using amplifiers with an input impedance of about 103 Ω, differential photoreceivers can be successfully used as selective short-wavelength and two-color ones.

XXIII Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 11-14 марта 2019 г. Pежимы колебаний в одномерной цепочке джозефсоновских контактов с нелокальной запаздывающей связью

We performed the numerical investigation of the one-dimensional series Josephson junction array with electromagnetic coupling and taking into account the delay. In general case of nonzero delay the equations for fast and slow phases have been obtained in the high-frequency (HF) approximation. The regimes of oscillations of the junction array have been studied at the different position on the current-voltage characteristic (IVC), including on its reverse branch. The same investigation has been performed for the systems of equations without delay of interaction and for the arbitrary bias current. Several stationary regimes of oscillations have been observed: synchronous oscillations, regime of traveling wave, regime of partial transition of junctions to the superconducting state and also chimera states.

Integrated technologies and the problem of creation of large-area silicone carbide devices for high-power converters

We consider limitations typical for semiconductor devices of up-to-date converter equipment based on silicon and silicone technologies. The reasons for processing complexities in creating the hardware components of heavy-current devices based on wide-band-gap semiconductors are analyzed. Possible approach to production of large area SiC-diodes and thyristors is formulated, which at post-processing stage allows performing modification of their voltage-current characteristics (VCC) and increasing in its non-linearity coefficient. Based on the concept of integrated power devices containing mesa-elements with VCC with random parameters, the possibility of sequential automated exclusion of those single “non-standard” micro-devices to adversely impact on general voltage-current characteristics of an array is considered. Algorithm is briefly described, and computer modelling of transformation of the reverse branch of integrated VCC occurring in the course of such modification is provided, which made it possible to establish relationship between the typical probability distributions of impurity (including in the presence of dislocations) and certain features of final VCC.