scholarly journals Electrical characteristics of silicon differential photoreceivers

2021 ◽  
Vol 2052 (1) ◽  
pp. 012014
Author(s):  
V V Gavrushko ◽  
A S Ionov ◽  
O R Kadriev ◽  
V A Lastkin
Keyword(s):  
Differential Resistance ◽  
Implantation Dose ◽  
Electrical Characteristics ◽  
Similar Shape ◽  
Voltage Curve ◽  
Current Voltage ◽  
Reverse Branch ◽  
Current Voltage Curve ◽  
Surface Leakage ◽  
Additional Channel

Abstract The volt-ampere curve of silicon differential photodiodes were measured. It was found that the current-voltage curve of the photodiodes of the main and additional channels had a similar shape, without revealing a significant dependence on the implantation dose of the additional channel. The main parameters of the equivalent circuits of photodiodes are determined. In the reverse branch, the dominant impact was exerted by the surface leakage conductivity with a differential resistance of about 10 GΩ. Measurements from minus 60 °C to 60 °C showed that when using amplifiers with an input impedance of about 103 Ω, differential photoreceivers can be successfully used as selective short-wavelength and two-color ones.

Electrical Characteristics and Microstructures of (Gd, Dy)-Doped Bi4Ti3O12 Ceramics

2008 ◽  
Vol 368-372 ◽  
pp. 88-90
Author(s):  
Y.H. Cai ◽  
X.A. Mei ◽  
Min Chen ◽  
K.L. Su ◽  
W.K. An ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Ohmic Behavior ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Bi3.25Dy0.75Ti3O12 (BDT) and Bi3.25Gd0.75Ti3O12 (BGT) ceramics were investigated. The current-voltage curve of the BGT sample exhibits a negative differential resistance behavior, whereas that of the BDT sample exhibits a simple ohmic behavior. The impedance spectrum of the BDT and BGT samples indicate that both consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Both BDT and BGT samples exhibit randomly oriented and plate-like morphology.

Electrical Characteristics and Microstructures of Pr6O11-Doped Bi4Ti3O12 Ceramics

2012 ◽  
Vol 512-515 ◽  
pp. 1313-1316
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
R.F. Liu ◽  
Chong Qing Huang ◽  
J. Liu
Keyword(s):  
Electrical Properties ◽  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Pr6O11-doped bismuth titanates (BixPryTi3O12, BPT) ceramics prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Pr-doped samples exhibit negative differential resistance behavior. The conducting filamentary model has been used to explain the negative differential resistance phenomenon in Pr-doped bismuth titanates. The impedance spectrum indicates that Pr-doped sample consists of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Pr-doped samples exhibit randomly oriented and plate-like morphology.

Electrical Characteristics and Microstructures of Gd-Doped Bi4Ti3O12 Ceramics

2011 ◽  
Vol 412 ◽  
pp. 314-317
Author(s):  
J. Liu ◽  
Min Chen ◽  
X.A. Mei ◽  
Y.H. Sun ◽  
Chong Qing Huang
Keyword(s):  
Electrical Properties ◽  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Gd-doped bismuth titanates Bi4-xGdxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Gd-doped sample exhibits a negative differential resistance behavior. The conducting filamentary model has been used to explain the negative differential resistance phenomenon in Gd-doped bismuth titanates. The impedance spectrum of Gd sample indicates that both consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12and the distribution of every element is uniform. Gd-doped sample exhibites randomly oriented and plate-like morphology.

Electrical Characteristics and Microstructures of Gd-Doped Bi4Ti3O12 Ceramics

2007 ◽  
Vol 336-338 ◽  
pp. 149-151
Author(s):  
X.B. Liu ◽  
Y.H. Sun ◽  
Min Chen ◽  
Chong Qing Huang ◽  
J. Liu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Negative Differential Resistance ◽  
Impedance Spectrum ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Gd-doped bismuth titanates (Bi3.25Gd0.75Ti3O12, BGT) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of the BGT ceramic exhibits a negative differential resistance behavior. The impedance spectrum indicates that the sample consists of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 (BIT) and the distribution of every element is uniform. The BGT sample exhibits randomly oriented and plate-like morphology.

Electrical Characteristics and Impedance Spectra of Gd2O3-Doped Bi4Ti3O12 Ceramics

2012 ◽  
Vol 624 ◽  
pp. 182-185 ◽  
Author(s):  
X.B. Liu ◽  
X.A. Mei ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Bismuth Titanate ◽  
Impedance Spectrum ◽  
Layered Perovskite ◽  
Impedance Spectra ◽  
Electrical Characteristics ◽  
Ohmic Behavior ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Gd2O3-bismuth titanate (Bi4-xGdxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Gd-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Gd-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Gd-doped sample exhibit randomly oriented and plate-like morphology.

Electrical Characteristics and Microstructures of Dy-Doped Bi4Ti3O12 Ceramics

2011 ◽  
Vol 412 ◽  
pp. 322-325
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
R.F. Liu ◽  
Y.H. Sun ◽  
J. Liu
Keyword(s):  
Electrical Properties ◽  
Bismuth Titanate ◽  
Impedance Spectrum ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Ohmic Behavior ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Layered Perovskite Structure

The electrical properties of Dy-bismuth titanate (Bi4-xDyxTi3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Dy-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Dy-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12and the distribution of every element is uniform. Dy-doped sample exhibit randomly oriented and plate-like morphology.

scholarly journals Obtaining memristor elements based on non-noble materials

2018 ◽  
Vol 143 ◽  
pp. 03009
Author(s):  
Pavel Troyan ◽  
Yury Sakharov ◽  
Ekaterina Zhidik
Keyword(s):  
Differential Resistance ◽  
Metal Electrodes ◽  
Type Region ◽  
Electrically Assisted ◽  
Voltage Curve ◽  
Current Voltage ◽  
Vacuum Forming ◽  
Current Voltage Curve ◽  
Voltammetric Methods ◽  
Vacuum Deposition Method

This study is aimed at creating memristor elements based on TiO2/TiOx layers with electrodes that do not contain noble and rare-earth metals, by vacuum deposition method. The characteristics of these elements analyzed by voltammetric methods show that the appearance of an N-type region of negative differential resistance on the current–voltage curve can be caused only by metal electrodes whose vacuum work function exceeds that of TiO2. The appearance of the N-type region on the current–voltage curve of a memristor element is possible only after electrically assisted vacuum forming. Mo–TiO2/TiOx–Ni/Cu structures, for which the ILR/IHR ratio reaches two orders of magnitude at a voltage of less than 4 V, have the most stable parameters.

ATP-activated chloride channel inhibited by an antibody to P glycoprotein

1994 ◽  
Vol 267 (4) ◽  
pp. C1095-C1102 ◽  
Author(s):  
J. J. Zhang ◽  
T. J. Jacob
Keyword(s):  
Single Channel ◽  
Disulfonic Acid ◽  
Fiber Cells ◽  
Cl Channel ◽  
P Glycoprotein ◽  
Voltage Curve ◽  
Current Voltage ◽  
Single Channel Activity ◽  
Current Voltage Curve

In this report, we present the characteristics of a Cl- channel found in lens fiber cells. The single channel has a conductance of 17 pS, a linear current-voltage curve, is activated by ATP or strong depolarization and is blocked by verapamil, quinidine, 4,4'-diisothiocyanostilbene-2,2'-disulfonic acid, 5-nitro-2-(3- phenylpropylamino)benzoate, dideoxyforskolin, and tamoxifen. These properties are similar to those reported for a volume-activated Cl- channel associated with the multidrug resistance (MDR) gene product, P glycoprotein (24). Confirming this connection, we demonstrate that our lens Cl- channel is inhibited by an antibody to P glycoprotein. The data we present here may, therefore, be the first characterization of the single channel activity of the Cl- channel associated with P glycoprotein.

Evidence of Hysteresis in a New p-i-n-i-p-i-n Amorphous Silicon Device

1997 ◽  
Vol 467 ◽  
Author(s):  
D. Caputo ◽  
G. De Cesare ◽  
F. Palma
Keyword(s):  
Charge Trapping ◽  
Bistable Behavior ◽  
Novel Device ◽  
Voltage Curve ◽  
Current Voltage ◽  
Recombination Processes ◽  
Current Voltage Curve ◽  
Numerical Device ◽  
Silicon Device

ABSTRACTA novel device based on a-Si:H p+-i-n−-i-p−-i-n+ structure, showing a hysteresis in its current-voltage curve is reported. A numerical device model allows to investigate in detail the fundamental role of the two lightly doped n− and p− layers, where charge trapping determines the bistable behavior of the device. The ON condition is mantained until the ambipolar charge injection overcomes the fixed charge. The transition OFF-ON starts when, increasing the applied voltage, one of the two lightly doped layers becomes completely depleted. The transition ON-OFF is, instead, mainly dependent on the recombination processes occurring in the central doped layers. Devices with hysteresis around 2 V and tum-on voltage around 12 are presented.

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