Sintering of Ba1-XSrXTiO3 Powders Prepared Using KOH-KNO3 Molten Salt Method

2009 ◽  
Vol 421-422 ◽  
pp. 235-238 ◽  
Author(s):  
Tomohiko Kishiki ◽  
Masashi Higuchi ◽  
Takashi Asaka ◽  
Yasuo Azuma ◽  
Keiichi Katayama
Keyword(s):  
Electrical Properties ◽  
Molten Salt ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Molten Salts ◽  
Sintering Behavior ◽  
Molten Salt Method ◽  
Barium Strontium ◽  
Perovskite Type ◽  
Perovskite Type Structure

Barium strontium titanate (BST), which has a typical perovskite-type structure, shows excellent electrical properties. BST powders were synthesized by heating mixtures of commercial reagents with an excess of TiO2 in molten salts of KOH and KNO3, and the sintering behavior of the resulting powders was evaluated. The sample with the highest density of 95% was obtained by sintering of the BST powders.

Structural and Electrical Properties of Nanocrystalline Diamond based Barium Strontium Titanate Varactors

2008 ◽  
Vol 377 (1) ◽  
pp. 75-85 ◽  
Author(s):  
Venkataramanan Gurumurthy ◽  
Sathyaharish Jeedigunta ◽  
Sam Baylis ◽  
Priscila Spagnol ◽  
John Bumgarner ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Nanocrystalline Diamond ◽  
Barium Strontium ◽  
Structural And Electrical Properties

Microstructure and electrical properties of Mn-doped barium strontium titanate thin films prepared on copper foils

2010 ◽  
Vol 256 (22) ◽  
pp. 6531-6535 ◽  
Author(s):  
Yanhua Fan ◽  
Shuhui Yu ◽  
Rong Sun ◽  
Lei Li ◽  
Yansheng Yin ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Copper Foils ◽  
Barium Strontium ◽  
Mn Doped

Model for interface formation and the resulting electrical properties for barium–strontium–titanate films on silicon

2003 ◽  
Vol 93 (7) ◽  
pp. 3866-3872 ◽  
Author(s):  
A. H. Mueller ◽  
N. A. Suvorova ◽  
E. A. Irene ◽  
O. Auciello ◽  
J. A. Schultz
Keyword(s):  
Electrical Properties ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Interface Formation ◽  
Barium Strontium

Structures and electrical properties of barium strontium titanate thin films grown by multi-ion-beam reactive sputtering technique

1995 ◽  
Vol 10 (3) ◽  
pp. 708-726 ◽  
Author(s):  
C-J. Peng ◽  
S.B. Krupanidhi
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Strontium Titanate ◽  
Electric Fields ◽  
Barium Strontium Titanate ◽  
Elevated Temperatures ◽  
Ion Beam ◽  
Type I ◽  
Type Ii ◽  
Barium Strontium

The structure and electrical properties of multi-ion beam reactive sputter (MIBERS) deposited barium strontium titanate (BST) films were characterized in terms of Ba/Sr ratio, substrate temperature, annealing temperature and time, film thickness, doping concentration, and secondary low-energy oxygen ion bombardment. Films deposited onto unheated substrates, followed by annealing at 700 °C showed lower dielectric constant (<200), compared to a dielectric constant of about 560 for those deposited at elevated temperatures, probably due to reduced voids. Two types of microstructures (type I and type II) were observed depending on the incipient phase of the as-grown films, which also led to two types of time domain dielectric response, Curie-von Schweidler and Debye type, respectively. The current-voltage (I-V) characteristics of type II films doped with high donor concentration showed a bulk space-charge-limited conduction (SCLC) with discrete shallow traps embedded in a trap-distributed background at high electric fields. The I-V characteristics of bombarded films deposited at higher substrate temperatures showed promising results of lower leakage currents and trap densities.

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