Pinched Hysteresis Scaling in Hybrid-Doped BaTiO3

2009 ◽  
Vol 421-422 ◽  
pp. 263-266
Author(s):  
Sukrit Sucharitakul ◽  
Sasiporn Prasertpalichat ◽  
Rattikorn Yimnirun ◽  
Yongyut Laosiritaworn

In order to investigate the mechanism of hybrid doped ferroelectric, BaTiO3 sample was prepared via conventional mixed-oxide method. The sample was then subjected to doping process with Fe3+ as acceptor dopant and Nb5+ as donor dopant. With varied concentration of acceptor dopant from 0.5 to 1 %M at fixed 1%M of donor, hysteresis property was obtained via Sawyer-Tower circuit. The hysteresis property of the sample was observed to vary over time by influence of ageing effect. By numerical scaling, the stretched exponential decay behavior of the system was obtained to gain the better insight of ageing mechanism of hybrid doped ferroelectric. With stretched exponential fitting, stretching parameter of lower doped Nb5+ were observed lower than that of equivalently doped Nb5+.

1998 ◽  
Vol 105 (9) ◽  
pp. 571-575 ◽  
Author(s):  
K. Suzuki ◽  
G. Bley ◽  
U. Neukirch ◽  
J. Gutowski ◽  
N. Takojima ◽  
...  

1999 ◽  
Vol 166 (1-6) ◽  
pp. 189-198 ◽  
Author(s):  
Eugene G Novikov ◽  
Arie van Hoek ◽  
Antonie J.W.G Visser ◽  
Johannes W Hofstraat

2006 ◽  
Vol 432 (1-3) ◽  
pp. 371-374 ◽  
Author(s):  
Ophir Flomenbom ◽  
Johan Hofkens ◽  
Kelly Velonia ◽  
Frans C. de Schryver ◽  
Alan E. Rowan ◽  
...  

2018 ◽  
Vol 140 (9) ◽  
Author(s):  
Cornelis P. L. Paul ◽  
Kaj S. Emanuel ◽  
Idsart Kingma ◽  
Albert J. van der Veen ◽  
Roderick M. Holewijn ◽  
...  

Intervertebral disk (IVD) degeneration is commonly described by loss of height and hydration. However, in the first stage of IVD degeneration, this loss has not yet occurred. In the current study, we use an ex vivo degeneration model to analyze the changes in IVDs mechanical behavior in the first phase of degeneration. We characterize these changes by stretched-exponential fitting, and suggest the fitted parameters as markers for early degeneration. Enzymatic degeneration of healthy lumbar caprine IVDs was induced by injecting 100 μL of Chondroïtinase ABC (Cabc) into the nucleus. A no-intervention and phosphate buffered saline (PBS) injected group were used as controls. IVDs were cultured in a bioreactor for 20 days under diurnal, simulated-physiological loading (SPL) conditions. Disk deformation was continuously monitored. Changes in disk height recovery behavior were quantified using stretched-exponential fitting. Disk height, histological sections, and water- and glycosaminoglycan (GAG)-content measurements were used as gold standards for the degenerative state. Cabc injection caused significant GAG loss from the nucleus and had detrimental effects on poro-elastic mechanical properties of the IVDs. These were progressive over time, with a propensity toward more linear recovery behavior. On histological sections, both PBS and Cabc injected IVDs showed moderate degeneration. A small GAG loss yields changes in IVD recovery behavior, which can be quantified with stretched-exponential fitting. Parameters changed significantly compared to control. Studies on disk degeneration and biomaterial engineering for degenerative disk disease (DDD) could benefit from focusing on IVD biomechanical behavior rather than height and water-content, as a marker for early disk degeneration.


1994 ◽  
Vol 358 ◽  
Author(s):  
G. Mauckner ◽  
J. Hamann ◽  
W. Rebitzer ◽  
T. Baier ◽  
K. Thonke ◽  
...  

ABSTRACTThe photoluminescence (PL) infrared (IR)-band of p-doped porous Si (PS) films is studied by steady-state and time-resolved PL and by photoluminescence excitation (PLE) in detail. In analogy to the S-band in the visible the IR-band shifts to higher energies with reduced average nanocrystal size. The IR- and S-bands are very different in their decay behavior and in their recombination lifetimes. The temperature-dependent PL intensity shows non-exponential decay with lifetime distributions in the nsec-µsec range in contrast to the stretched exponential decay shape of the S-band corresponding to lifetime distributions in the μsec -msec range. The origin of the IR-band is likely related to radiative recombination at deep defects in Si nanocrystals with quantum-upshifted band gaps.


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