Ferroelectric and Piezoelectric Properties of Bi4Ti3O12 Single Crystals Grown by Top-Seeded Solution Growth Method at High Oxygen Pressure
Keyword(s):
High-performance single crystals of ferroelectric Bi4Ti3O12 (BiT) have been successfully obtained via the top-seeded solution growth under high oxygen pressure (Po2) atmosphere. Crystals grown at 960°C at a Po2 of 0.9 MPa exhibited a well-saturated hysteresis loop with a remanent polarization of 48 mC/cm2 and a coercive field of 29 kV/cm. The results of piezoresponse force microscopy indicate that polarization switching is accomplished throughout the BiT crystals obtained. Electric-field-induced strain measurements along the a axis yield a piezoelectric constant d11* of 37 pm/V for BiT.
2010 ◽
Vol 49
(9)
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pp. 09MD09
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2010 ◽
Vol 49
(9)
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pp. 09MC06
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1997 ◽
Vol 282-287
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pp. 457-458
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1997 ◽
Vol 177
(3-4)
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pp. 211-216
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