Ferroelectric Property and Microstructures of La-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 114-117
Author(s):  
X.A. Mei ◽  
Rui Fang Liu ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
La Doped

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 20μC/cm2 and 85KV/cm , respectively.

Large Remanent Polarization of Pm2O3-Doped Bi4Ti3O12 Films

2013 ◽  
Vol 591 ◽  
pp. 104-107
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
C.Q. Huang
Keyword(s):  
Remanent Polarization ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics

Pm-doped bismuth titanate (Pm4-xLaxTi3O12: BPT) and pure Bi4Ti3O12(BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25, 1.0, and 1.25, the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75, the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Fims with x=0.75 were above 40μC/cm2 and 60KV/cm , respectively.

Large Remanent Polarization of Bi4Ti3O12 Films by Ho3+ Substitution

2013 ◽  
Vol 833 ◽  
pp. 29-32
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
C.Q. Huang
Keyword(s):  
Remanent Polarization ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics

Ho-doped bismuth titanate (Bi4-xHoxTi3O12: BHT) and pure Bi4Ti3O12(BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25, 1.0, and 1.25, the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75, the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BHT Fims with x=0.75 were above 30μC/cm2 and 60KV/cm , respectively.

Electrical Characterization and Microstructures of La-Doped Bi4Ti3O12 Thin Films

2011 ◽  
Vol 412 ◽  
pp. 318-321
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
R.F. Liu ◽  
Y.H. Sun ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
La Doping ◽  
Si Substrates ◽  
Lower Temperature ◽  
La Doped

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. La-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675°C to lower temperature and a improvement in dielectric property. The experimental results indicated that La doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BLT film with x=0.75 were 20 μC/cm2 and 82kV/cm, respectively.

Electrical Characterization and Microstructures of Y2O3-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 591 ◽  
pp. 208-211
Author(s):  
Min Chen ◽  
J. Liu ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature ◽  
Curie Temperature Tc

Y2O3-doped bismuth titanate (Bi4-xYxTi3O12: BYT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Y-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675 °C to lower temperature and a improvement in dielectric property. The experimental results indicated that Y doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BYT film with x=0.75 were 28 μC/cm2 and 65 kV/cm, respectively.

Preparation and Electrical Characteristics of Bi4-xYbxTi3O12 Ceramics

2013 ◽  
Vol 591 ◽  
pp. 212-215 ◽  
Author(s):  
Chong Qing Huang ◽  
J. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics ◽  
Large Leakage Current

The electrical properties of Yb-doped bismuth titanate,Bi4-xYbxTi3O12 (BYbT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BYbT ceramic with x=0.75 were above 16μC/cm2 and 75KV/cm , respectively.

Current-Voltage and Ferroelectric Characteristics of Er2O3-Doped Bi4Ti3O12 Ceramics

2012 ◽  
Vol 624 ◽  
pp. 162-165
Author(s):  
C.Q. Huang ◽  
X.B. Liu ◽  
X.A. Mei ◽  
J. Liu
Keyword(s):  
Negative Differential Resistance ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics ◽  
Large Leakage Current

The electrical properties of Er2O3-doped bismuth titanate，Bi4-xErxTi3O12 (BET) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-E hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.6 and 0.8 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BET ceramic with x=0.8 were above 20μC/cm2 and 65KV/cm , respectively.

Electrical Characteristics and Microstructures of Eu2O3-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 177 ◽  
pp. 197-200
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
K.L. Su ◽  
A.H. Cai ◽  
J. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Electrical Characteristics ◽  
Si Substrates ◽  
Ferroelectric Hysteresis

Eu2O3-doped bismuth titanate (Bi1-xEuxTi3O12: BET) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BET films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with x=0.0 , 0.25, 1.0 and 1.25, I-E characteristics exhibited negative differential resistance behaviors and their ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with x=0.5 and 0.75, I-E characteristics were simple ohmic behaviors and their ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization (Pr) and coercive field (Ec) of the BET Film with x=0.75 were above 30μC/cm2 and 85KV/cm , respectively.

Electrical Characterization and Microstructures of Ce-Doped Bi4Ti3O12 Thin Films

2011 ◽  
Vol 492 ◽  
pp. 222-225
Author(s):  
J. Liu ◽  
M. Chen ◽  
X.A. Mei ◽  
Y.H. Sun ◽  
Chong Qing Huang
Keyword(s):  
Thin Films ◽  
Bismuth Titanate ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature

Tb-doped bismuth titanate (Bi4-xCexTi3O12: BCT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Ce-doping into BIT caused a large shift of the Curie temperature (TC) from 675°C to lower temperature and a improvement in dielectric property. The experimental results indicated that Ce doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BCT film with x = 0.75 were 23 μC/cm2 and 80 kV/cm, respectively.

Electrical Characterization and Microstructures of Tb-Doped Bi4Ti3O12 Thin Films

2008 ◽  
Vol 368-372 ◽  
pp. 82-84
Author(s):  
Y.H. Sun ◽  
Min Chen ◽  
W.K. An ◽  
A.H. Cai ◽  
J. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature ◽  
Curie Temperature Tc

Tb-doped bismuth titanate (BixTbyTi3O12: BTT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well-developed rod-like grains with random orientation. Tb doping into BIT caused a large shift of the Curie temperature (TC) from 675°C to lower temperature. The experimental results indicated that Tb doping into BIT result in a remarkable improvement in dielectric property.

Electrical Characterization and Microstructures of Bi4-xDyxTi3O12 Ceramics

2014 ◽  
Vol 633 ◽  
pp. 366-369
Author(s):  
Chong Qing Huang ◽  
X.A. Mei ◽  
M. Chen ◽  
B. Li
Keyword(s):  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Electrical Characterization ◽  
Differential Resistance ◽  
Layered Perovskite ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics ◽  
Large Leakage Current

The electrical properties of Dy-doped bismuth titanate,Bi4-xDyxTi3O12(BDT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr) and coercive field (Ec) of the BDT ceramic with x=0.75 were above 16μC/cm2and 75KV/cm , respectively.

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