Total Ionizing Dose Effects on CMOS Image Sensors with Deep-Trench Isolation

2014 ◽  
Vol 605 ◽  
pp. 453-456
Author(s):  
Nayera Ahmed ◽  
Guo Neng Lu ◽  
François Roy
Keyword(s):  
Image Sensor ◽  
Parametric Modeling ◽  
Radiation Environment ◽  
Total Ionizing Dose ◽  
Deep Trench ◽  
Cmos Image Sensors ◽  
Trench Isolation ◽  
Before And After ◽  
Total Ionizing Dose Effects ◽  
Different Parts

We have investigated Total Ionizing Dose (TID) effects on a 1.4μm-pitch, Deep-Trench Isolation (DTI) CMOS image sensor for its use in radiation environment. Our investigation includes characterization and TCAD simulations (with parametric modeling) of the image sensor before and after irradiation with 60Co gamma rays source for TID from 3 to 100 Krad. We have obtained agreements between measured results and simulated ones on degradations of the characteristics Quantum Efficiency (QE) and dark current (Idark). The agreements validate our modeling and simulation approach to evaluating these characteristics. It has been shown that TID causes evolution of interface states of different parts of the pixel, which are responsible for QE and Idark degradations. TID effects on different parts of the pixel can be identified and quantified.

scholarly journals Total Ionizing Dose Effects on a Delay-Based Physical Unclonable Function Implemented in FPGAs

Electronics ◽  
2018 ◽  
Vol 7 (9) ◽  
pp. 163 ◽  
Author(s):  
Honorio Martin ◽  
Pedro Martin-Holgado ◽  
Yolanda Morilla ◽  
Luis Entrena ◽  
Enrique San-Millan
Keyword(s):  
Low Cost ◽  
Ring Oscillator ◽  
Radiation Environment ◽  
Key Generation ◽  
Total Ionizing Dose ◽  
Space Applications ◽  
Physical Unclonable Functions ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

Physical Unclonable Functions (PUFs) are hardware security primitives that are increasingly being used for authentication and key generation in ICs and FPGAs. For space systems, they are a promising approach to meet the needs for secure communications at low cost. To this purpose, it is essential to determine if they are reliable in the space radiation environment. In this work we evaluate the Total Ionizing Dose effects on a delay-based PUF implemented in SRAM-FPGA, namely a Ring Oscillator PUF. Several major quality metrics have been used to analyze the evolution of the PUF response with the total ionizing dose. Experimental results demonstrate that total ionizing dose has a perceptible effect on the quality of the PUF response, but it could still be used for space applications by making some appropriate corrections.

MOS Capacitor Deep Trench Isolation for CMOS image sensors

2014 ◽  
Author(s):  
N. Ahmed ◽  
F. Roy ◽  
G-N. Lu ◽  
B. Mamdy ◽  
J-P. Carrere ◽  
...  
Keyword(s):  
Image Sensors ◽  
Mos Capacitor ◽  
Deep Trench ◽  
Cmos Image Sensors ◽  
Trench Isolation

scholarly journals Deep Trench Isolation and Inverted Pyramid Array Structures Used to Enhance Optical Efficiency of Photodiode in CMOS Image Sensor via Simulations

Sensors ◽  
2020 ◽  
Vol 20 (11) ◽  
pp. 3062
Author(s):  
Chang-Fu Han ◽  
Jiun-Ming Chiou ◽  
Jen-Fin Lin
Keyword(s):  
Near Infrared ◽  
Wavelength Region ◽  
Image Sensor ◽  
Optical Efficiency ◽  
Growth Ratio ◽  
Deep Trench ◽  
Inverted Pyramid ◽  
Cmos Sensor ◽  
Trench Isolation ◽  
Color Pixel

The photodiode in the backside-illuminated CMOS sensor is modeled to analyze the optical performances in a range of wavelengths (300–1100 nm). The effects of changing in the deep trench isolation depth (DTI) and pitch size (d) of the inverted pyramid array (IPA) on the peak value (OEmax.) of optical efficiency (OE) and its wavelength region are identified first. Then, the growth ratio (GR) is defined for the OE change in these wavelength ranges to highlight the effectiveness of various DTI and d combinations on the OEs and evaluate the OE difference between the pixel arrays with and without the DTI + IPA structures. Increasing DTI can bring in monotonous OEmax. increases in the entire wavelength region. For a fixed DTI, the maximum OEmax. is formed as the flat plane (d = 0 nm) is chosen for the top surface of Si photodiode in the RGB pixels operating at the visible light wavelengths; whereas different nonzero value is needed to obtain the maximum OEmax. for the RGB pixels operating in the near-infrared (NIR) region. The optimum choice in d for each color pixel and DTI depth can elevate the maximum GR value in the NIR region up to 82.2%.

Total Ionizing Dose and Displacement-Damage Effects in Microelectronics

MRS Bulletin ◽  
2003 ◽  
Vol 28 (2) ◽  
pp. 136-140 ◽  
Author(s):  
Charles C. Foster
Keyword(s):  
Lattice Structure ◽  
Radiation Environment ◽  
Device Performance ◽  
Total Ionizing Dose ◽  
Displacement Damage ◽  
Microelectronic Devices ◽  
Dose Effects ◽  
Device Lifetime ◽  
Total Ionizing Dose Effects ◽  
Radiation Passing

AbstractWhen exposed to radiation, the function of microelectronic devices is not only degraded by single-event phenomena but by cumulative effects. Most of the energy lost by radiation passing through semiconductors is through ionization. Buildup of charge in gate oxide layers and of interface and border traps due to ionization result in semipermanent damage to the device. These effects are known as total ionizing dose effects. A fraction of the energy of the radiation passing through semiconductors is lost to displacement of atoms from their sites in the crystal lattice structure. The buildup of displacement damage with radiation exposure causes gradual but permanent changes in device performance and limits device lifetime in a radiation environment. Displacement damage will be discussed in the context of non-ionizing energy loss.

scholarly journals Electrical Characterization of the Backside Interface on BSI Global Shutter Pixels with Tungsten-Shield Test Structures on CDTI Process

Sensors ◽  
2020 ◽  
Vol 20 (1) ◽  
pp. 287
Author(s):  
Célestin Doyen ◽  
Stéphane Ricq ◽  
Pierre Magnan ◽  
Olivier Marcelot ◽  
Marios Barlas ◽  
...  
Keyword(s):  
Dark Current ◽  
Electrical Characterization ◽  
Image Sensors ◽  
Density Of State ◽  
Deep Trench ◽  
Cmos Image Sensors ◽  
Trench Isolation ◽  
Key Factor

A new methodology is presented using well known electrical characterization techniques on dedicated single devices in order to investigate backside interface contribution to the measured pixel dark current in BSI CMOS image sensors technologies. Extractions of interface states and charges within the dielectric densities are achieved. The results show that, in our case, the density of state is not directly the source of dark current excursions. The quality of the passivation of the backside interface appears to be the key factor. Thanks to the presented new test structures, it has been demonstrated that the backside interface contribution to dark current can be investigated separately from other sources of dark current, such as the frontside interface, DTI (deep trench isolation), etc.

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