5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology

2020 ◽  
Author(s):  
HyunChul Kim ◽  
Jongeun Park ◽  
Insung Joe ◽  
Doowon Kwon ◽  
Joo Hyoung Kim ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Deep Trench ◽  
Trench Isolation

Total Ionizing Dose Effects on CMOS Image Sensors with Deep-Trench Isolation

2014 ◽  
Vol 605 ◽  
pp. 453-456
Author(s):  
Nayera Ahmed ◽  
Guo Neng Lu ◽  
François Roy
Keyword(s):  
Image Sensor ◽  
Parametric Modeling ◽  
Radiation Environment ◽  
Total Ionizing Dose ◽  
Deep Trench ◽  
Cmos Image Sensors ◽  
Trench Isolation ◽  
Before And After ◽  
Total Ionizing Dose Effects ◽  
Different Parts

We have investigated Total Ionizing Dose (TID) effects on a 1.4μm-pitch, Deep-Trench Isolation (DTI) CMOS image sensor for its use in radiation environment. Our investigation includes characterization and TCAD simulations (with parametric modeling) of the image sensor before and after irradiation with 60Co gamma rays source for TID from 3 to 100 Krad. We have obtained agreements between measured results and simulated ones on degradations of the characteristics Quantum Efficiency (QE) and dark current (Idark). The agreements validate our modeling and simulation approach to evaluating these characteristics. It has been shown that TID causes evolution of interface states of different parts of the pixel, which are responsible for QE and Idark degradations. TID effects on different parts of the pixel can be identified and quantified.

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