Research of the PZT Polarization for Deformable Mirror

2014 ◽  
Vol 609-610 ◽  
pp. 1331-1335
Author(s):  
Jun Jie Chen ◽  
Ying Liu ◽  
Jian Qiang Ma ◽  
Ji Cong Deng ◽  
Bao Qing Li ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Lead Zirconate ◽  
Deformable Mirror ◽  
Pzt Film ◽  
Zirconate Titanate

This paper demonstrates that the deformation of the piezoelectric deformable mirror (DM) is proportional to the transverse piezoelectric coefficient of the lead zirconate titanate (PZT) by the theoretical analysis. The optimal polarization conditions were obtained by experiments to optimize the performance of the DM. After the optimal polarization, the transverse piezoelectric coefficient of the PZT film increases from 350 pm/V to 431 pm/V, which will improve the deformation of the DM.

Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Property ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

Enhanced Spontaneous Polarization of Dysprosium-substituted Lead Zirconate Titanate Thin Films by a Chemical Solution Deposition Method

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Uchida ◽  
Hiroshi Nakaki ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Spontaneous Polarization ◽  
Chemical Solution Deposition ◽  
Lead Zirconate ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Pzt Films

ABSTRACTInfluences of the B-site substitution using Dy3+ ion on the crystal structure and ferroelectric properties of lead zirconate titanate (PZT) films were investigated. Dy3+-substituted PZT films with nominal chemical compositions of Pb1.00Dyx (Zr0.40Ti0.60)1-(3x/4)O3 (x = 0 ∼ 0.06) were fabricated by a chemical solution deposition (CSD). Polycrystalline PZT films with preferential orientation of (111)PZT were obtained on (111)Pt/TiO2/SiO2/(100)Si substrates, while epitaxially-grown (111)PZT films were fabricated on (111)SrRuO3//(111)Pt//(100)YSZ//(100)Si substrate. Ratio of PZT lattice parameters (c/a), which corresponds to its crystal anisotropy, was enhanced by the Dy3+-substitution with x = 0.02. Spontaneous polarization (Ps) of Dy3+-substituted PZT film (x = 0.02) along polar [001] axis of PZT lattice was estimated from saturation polarization (Psat) value of the epitaxially-grown (111)PZT film on (111)SrRuO3//(111)Pt//(100)YSZ//(100)Si to be 84 μC/cm2 that was significantly larger than that of non-substituted PZT (= 71 μC/cm2). We concluded that the enhancement of Ps value could be achieved by the Dy3+-substitution that promoted the crystal anisotropy of PZT lattice.

The Role of the Lead Zirconate Titanate (PZT)-Pt Interface in the Anomalous Phase Transformation Kinetics in Sputtered Pzt Thin Film Capacitors at Sub-2000 Å Thicknesses

1991 ◽  
Vol 243 ◽  
Author(s):  
Vinay Chikarmane ◽  
Jiyoung Kim ◽  
C. Sudhama ◽  
Jack Lee ◽  
Al Tasch ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Transformation ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Initial Increase ◽  
Transformation Kinetics ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Phase Transformation Kinetics ◽  
Pzt Thin Film

AbstractThe Pt-Lead Zirconate Titanate (PZT) thin film interface plays a key role in determining the electrical properties and phase transformation kinetics of Pt-PZT-Pt thin film capacitor structures. The results of the electrical and material properties of PZT (65/35) films that vary in thickness between 500 Å to 4000 Å deposited by DC-magnetron sputtering under identical deposition conditions, and subjected to the same post-deposition thermal processing conditions shows that the Pt-PZT interface dominates thin film properties at low thicknesses (≦ 2000 Å). The charge storage density (Qc') and maximum polarization (Pmax) shows an anomalous variation with thickness, showing an initial increase followed by a drastic decrease as the film thickness is scaled down to 500Å. Significant interdiffusion at the PZT film-Pt electrode retards the pyrochlore-to-perovskite phase transformation nucleation and growth rate in PZT films of thickness 2000Å and lower. Gate polarity dependence of the time-tobreakdown and the degradation field is observed for all PZT film thicknesses (including 4000Å). This indicates that the ferroelectric film-electrode interface has an important role to play in determining the electrical reliability properties even in the 4000Å thick PZT film, although Qc' and Pmax are not adversely affected at these thicknesses.

Effect of Polarization on the Microstructure and Piezoelectric Properties of PZT-Cement Composites

2008 ◽  
Vol 55-57 ◽  
pp. 381-384 ◽  
Author(s):  
Arnon Chaipanich ◽  
Nittaya Jaitanong
Keyword(s):  
Portland Cement ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Piezoelectric Properties ◽  
Lead Zirconate ◽  
Cement Composites ◽  
Poling Field ◽  
Polarization Condition ◽  
Zirconate Titanate ◽  
The Ideal

Lead zirconate titanate (PZT)-Portland cement (PC) composites were produced and successfully poled at different poling field and time. The effect of polarization on the microstructure and piezoelectric properties were then investigated. It was found that, at a fixed poling field up to 2 kV/mm, the piezoelectric coefficient (d33) was found to increase with poling time. The optimum poling time was found at 45 minutes where d33 value is 42 pC/N. The optimum and most practical poling field found for the composite was at 2 kV/mm. Lower poling field would give the composite lower piezoelectricity and poling field that is too high would result to breakdown of samples. Therefore, from these results, a poling field of 2 kV/mm at 45 minutes would be the ideal polarization condition used in poling PZT-PC composites.

Electrical Properties of Lead Zinc Niobate - Lead Zirconate Titanate Thick Films Formed by Aerosol Deposition Process

2007 ◽  
Vol 124-126 ◽  
pp. 169-172 ◽  
Author(s):  
Jong Jin Choi ◽  
Joo Hee Jang ◽  
Dong Soo Park ◽  
Byung Dong Hahn ◽  
Woon Ha Yoon ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Thick Films ◽  
Aerosol Deposition ◽  
Lead Zirconate ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Aerosol Deposition Method ◽  
Lead Zinc Niobate ◽  
Lead Zinc

Lead zinc niobate (PZN) added lead zirconate titanate (PZT) thick films with thickness of 5~10 μm were fabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0, 20 and 40 %. The as deposited film had fairly dense microstructure without any crack, and showed only a perovskite single phase formed with nano-sized grains. The as-deposited films on silicon were annealed at temperatures of 700oC, and the films deposited on sapphire were annealed at 900oC in the electrical furnace. The effects of PZN addition on the microstructural evolution were observed using FE-SEM and HR-TEM, and dielectric and ferroelectric properties of the films were characterized using impedance analyzer and Sawyer-Tower circuit, respectively. The PZN added PZT film showed poor electrical properties than pure PZT film when the films were coated on silicon substrate and annealed at 700oC, on the other hand, the PZN added PZT film showed higher remanent polarization and dielectric constant values then pure PZT film when the films were coated on sapphire and annealed at 900oC. The ferroelectric and dielectric characteristics of 20% PZN added PZT films annealed at 900oC were comparable with the values obtained from bulk ceramic specimen with same composition sintered at 1200oC.

Processing and Piezoelectric Properties of Mod Pzt Films and Pzt/Polymer Composite Coatings

1996 ◽  
Vol 433 ◽  
Author(s):  
J.S. Wright ◽  
L.F. Francis
Keyword(s):  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Composite Coatings ◽  
Lead Zirconate ◽  
Ion Milling ◽  
Ceramic Phase ◽  
Pzt Film ◽  
Water Films ◽  
Dielectric Constant And Loss ◽  
Pzt Films

AbstractLead zirconate titanate, Pb(Zr0.53Ti0.47)O3 (PZT), coatings were prepared using a metallorganic decomposition (MOD) route with lead and titanium acetates and zirconium acetylacetonate in acetic acid and water. Films with thickness of 0.66 μm were prepared on (100) Si with a layered bottom electrode (Pt/Ti/TiO2/SiO2). Dielectric constant and loss were 1100 and 0.04 (1 kHz), respectively, and remnant polarization and coercive field were 30 μC/cm2 and 40 kV/cm. Piezoelectric coefficient (d33) of the PZT film, measured with a singlebeam laser interferometer, was 41 pm/V. Standard micromachining techniques were used to etch the PZT to form discrete PZT posts for preparation of the ceramic phase for composite coatings with a 1–3 connectivity. SEM was used to determine the dense and etched film microstructure. Preliminary ion milling results, used to etch the PZT, are also presented.

Fabrication of Lead Zirconate Titanate Thin Films by Inkjet Printing

2013 ◽  
Vol 582 ◽  
pp. 7-10
Author(s):  
Akira Shimofuku ◽  
Osamu Machida ◽  
Atsushi Takeuchi ◽  
Yoshikazu Akiyama ◽  
Eiichi Ohta
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Inkjet Printing ◽  
Chemical Solution Deposition ◽  
Electrical Characteristic ◽  
Lead Zirconate ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Pzt Film ◽  
Zirconate Titanate

In this study, a finely patterned lead zirconate titanate (PZT) film is fabricated by a combination of inkjet printing (IJP), chemical solution deposition (CSD), and surface energy controlling technology. The PZT film, which can be used as an actuator, has enough thickness after iterating the set of surface treatment, inkjet deposition, and baking. We confirmed the electrical characteristic of this film and drop ejection from inkjet head using it.

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