Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals

2003 ◽  
Vol 433-436 ◽  
pp. 337-340 ◽  
Author(s):  
Matthias Bickermann ◽  
Roland Weingärtner ◽  
Z.G. Herro ◽  
Dieter Hofmann ◽  
Ulrike Künecke ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Bulk Crystals ◽  
Boron Doped ◽  
P Type

Magneto-Optical Characterization of the Nitrogen-Related Impurities in p-Type ZnSe Epilayers

2000 ◽  
Vol 180 (1) ◽  
pp. 195-199 ◽  
Author(s):  
L. Gravier ◽  
H. Makino ◽  
K. Arai ◽  
H. Sasaki ◽  
K. Kimura ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Related Impurities ◽  
P Type

Optical characterization of Ba0.5Sr0.5TiO3 material grown on a p-type silicon substrate (111) doped niobium oxide and chlorophyll

2020 ◽  
Vol 568 (1) ◽  
pp. 62-70
Author(s):  
Aep Setiawan ◽  
Endah Kinarya Palupi ◽  
Rofiqul Umam ◽  
Husin Alatas ◽  
Irzaman
Keyword(s):  
Silicon Substrate ◽  
Niobium Oxide ◽  
Optical Characterization ◽  
Type Silicon ◽  
P Type

Electrical and optical characterization of boron-doped (111) homoepitaxial diamond films

2005 ◽  
Vol 14 (11-12) ◽  
pp. 1964-1968 ◽  
Author(s):  
Sung-Gi Ri ◽  
Hiromitsu Kato ◽  
Masahiko Ogura ◽  
Hideyuki Watanabe ◽  
Toshiharu Makino ◽  
...  
Keyword(s):  
Diamond Films ◽  
Optical Characterization ◽  
Boron Doped

Electrical and Optical Characterization of Boron-doped Microcrystalline SiH Films Prepared by ECR-CVD for Solar Cell

2014 ◽  
Vol 60 (1) ◽  
pp. 557-563
Author(s):  
Y. L. Hsieh ◽  
T. T. Li ◽  
L. C. Hu ◽  
Y. H. Chu ◽  
C. C. Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Optical Characterization ◽  
Boron Doped

Optical characterization of magnetron sputtered p-type ZnO thin films codoped with Ga and As

2011 ◽  
Vol 209 (2) ◽  
pp. 294-296 ◽  
Author(s):  
Jang-Ho Park ◽  
Ho-Yeon Seo ◽  
Sang-Hun Jeong ◽  
Byung-Teak Lee
Keyword(s):  
Thin Films ◽  
Optical Characterization ◽  
Zno Thin Films ◽  
P Type

Mobility characterization of p-type and n-type strained sil-x-yGexcy/Si Epilayer hall devices

1998 ◽  
Vol 535 ◽  
Author(s):  
Jeff J. Petersoa ◽  
Charles E. Hunt ◽  
Stefan F. Zappe ◽  
Ernst Obeneier ◽  
Richard Westhoff ◽  
...  
Keyword(s):  
Doping Level ◽  
Doping Concentration ◽  
Impurity Scattering ◽  
Temperature Range ◽  
Boron Doped ◽  
Ionized Impurity Scattering ◽  
Van Der Pauw ◽  
P Type

AbstractMobilities in Si1-x-yGex Cy layers were measured using mesa etched Van der Pauw structures for alloy layers with 0 < x < 0.30 and 0 < y < 0.02 and doping levels of 1015 < N < 1018 cm-3. Mobilities in Si1-x-yGex Cy layers with x = 0.27 were found to approach Si mobilities for both μn and μp.While electron mobilities in phosphorous-doped SiGeC decrease with doping concentration, hole mobilities in boron-doped SiGeC increase with doping level, indicating ionized impurity scattering is not dominant for μp over the temperature range studied.

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