Mobility characterization of p-type and n-type strained sil-x-yGexcy/Si Epilayer hall devices

1998 ◽  
Vol 535 ◽  
Author(s):  
Jeff J. Petersoa ◽  
Charles E. Hunt ◽  
Stefan F. Zappe ◽  
Ernst Obeneier ◽  
Richard Westhoff ◽  
...  
Keyword(s):  
Doping Level ◽  
Doping Concentration ◽  
Impurity Scattering ◽  
Temperature Range ◽  
Boron Doped ◽  
Ionized Impurity Scattering ◽  
Van Der Pauw ◽  
P Type

AbstractMobilities in Si1-x-yGex Cy layers were measured using mesa etched Van der Pauw structures for alloy layers with 0 < x < 0.30 and 0 < y < 0.02 and doping levels of 1015 < N < 1018 cm-3. Mobilities in Si1-x-yGex Cy layers with x = 0.27 were found to approach Si mobilities for both μn and μp.While electron mobilities in phosphorous-doped SiGeC decrease with doping concentration, hole mobilities in boron-doped SiGeC increase with doping level, indicating ionized impurity scattering is not dominant for μp over the temperature range studied.

Concentration-Dependent Photoluminescence and Raman of p-Type GaAs Grown in a Metallic-Arsenic-Based-MOCVD System

2008 ◽  
Vol 587-588 ◽  
pp. 283-287
Author(s):  
J. Díaz-Reyes ◽  
Miguel Galvan-Arellano ◽  
R. Peña-Sierra
Keyword(s):  
Hole Concentration ◽  
Radiative Transitions ◽  
Growth Atmosphere ◽  
Scattering Spectra ◽  
Van Der Pauw ◽  
High Concentrations ◽  
Raman Scattering Spectra ◽  
P Type ◽  
Photoluminescence Response

This work presents the optical and structural characterization of p-type GaAs epilayers. The gallium precursor was the organometallic compound trimethylgallium (TMG). The influence of the doping in the optical and structural properties of the GaAs layers has been studied by photoluminescence (PL) and Raman dispersion measurements. The range of analyzed hole concentration was from 1017 to 1019 cm-3 as measured by the Hall-van der Pauw method. For carrying out doping p-type, it was necessary to modify the hydrogen activity in the growth atmosphere with the control of a H2+N2 mixture, which was used like transporting gas. The photoluminescence response and Raman dispersion of the layers are strongly dependence of the growth temperature, which were investigated based on the hole concentration. The PL response of the layers shows two radiative transitions, band-to-band and band-to-C-acceptor at low hole concentration and disappears at high concentrations. Raman scattering spectra show LO mode at 270 cm-1 for low doped samples and a LO-like mode at 290 cm-1 produced by the phonon-holeplasmon coupling for high doped samples.

Diffusion of Gold into Heavily Boron-Doped Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
H. Bracht ◽  
A. Rodriguez Schachtrup
Keyword(s):  
Doping Level ◽  
Hole Concentration ◽  
Effective Diffusion ◽  
Boron Doped ◽  
Enthalpy Difference ◽  
Background Doping ◽  
B Doping ◽  
P Type ◽  
Level Effect ◽  
Positively Charged

ABSTRACTDiffusion of Au into dislocation-free and highly dislocated Si with high B-background doping levels has been investigated with the aid of neutron activation analysis in conjunction with mechanical sectioning. The high B-doping level causes extrinsic conditions, i.e., the hole concentration exceeds the intrinsic carrier concentration even at diffusion temperatures between 900°C and 1100°C. All profiles are accurately described on the basis of the kick-out diffusion model and a mechanism which takes into account segregation of Au at dislocations. Our analysis provides solubility data of Au in Si and effective diffusion coefficients related to interstitial Au and Si self-interstitials I. The dependence of these quantities on the B-background doping level is well described by the Fermi-level effect. This analysis supports singly positively charged states in p-type Si of Au on interstitial (Aui) and substitutional (Aus) sites and of Si self-interstitials. Successful fitting of additionally requires an acceptor level of Aus. The electrical properties deduced for Aui, Aus and I are summarized in Table 2. Au profiles in highly dislocated Si obtained especially after diffusion at 900° C give evidence of Au trapped at dislocations. From our preliminary experimental results we determine an enthalpy difference of 2.7 eV between Au on substitutional sites and Au captured at dislocations.

Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals

2003 ◽  
Vol 433-436 ◽  
pp. 337-340 ◽  
Author(s):  
Matthias Bickermann ◽  
Roland Weingärtner ◽  
Z.G. Herro ◽  
Dieter Hofmann ◽  
Ulrike Künecke ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Bulk Crystals ◽  
Boron Doped ◽  
P Type

Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD

2014 ◽  
Vol 64 (3) ◽  
pp. 443-450
Author(s):  
Yeon-Ho Kil ◽  
Hyeon Deok Yang ◽  
Jong-Han Yang ◽  
Sukill Kang ◽  
Tae Soo Jeong ◽  
...  
Keyword(s):  
Concentration Dependence ◽  
Doping Concentration ◽  
Boron Doped ◽  
P Type

Nanoscale Characterization of Active Doping Concentration in Boron-Doped Individual Si Nanocrystals

2018 ◽  
Vol 215 (23) ◽  
pp. 1800531 ◽  
Author(s):  
Jie Xu ◽  
Dongke Li ◽  
Deyuan Chen ◽  
Wei Li ◽  
Jun Xu
Keyword(s):  
Doping Concentration ◽  
Boron Doped ◽  
Si Nanocrystals ◽  
Nanoscale Characterization

Ionized impurity scattering in heavily doped p-type InSb thin films

1979 ◽  
Vol 60 (2) ◽  
pp. 249-255 ◽  
Author(s):  
K.V. Krishna ◽  
P.C. Mathur ◽  
A.L. Dawar ◽  
O.P. Taneja
Keyword(s):  
Thin Films ◽  
Impurity Scattering ◽  
Ionized Impurity Scattering ◽  
Insb Thin Films ◽  
Heavily Doped ◽  
P Type

GROWTH AND CHARACTERIZATION OF Hg1−xCdxTe ON CdTe SUBSTRATES, PREPARED BY ORGANOMETALLIC EPITAXY

1985 ◽  
Vol 56 ◽  
Author(s):  
I. B. Bhat ◽  
S. K. Ghandhi
Keyword(s):  
Temperature Range ◽  
Horizontal Reactor ◽  
P Type ◽  
Specular Surfaces ◽  
Organometallic Epitaxy

AbstractHgl−xCdxTe layers have been grown on CdTe substrates using dimethylcadmium, diethyltelluride and mercury in a horizontal reactor. Details of conditions for growth of these layers are presented in this paper. Specular surfaces of Hg1−x CdxTe with × ≥ 0.15 were obtained on (100) 3°, → (110) oriented CdTe substrates. Both n-type and p-type layers could be obtained. The mobility of these layers was measured over the temperature range of 10 K to 300 K. The mobility of n-type Hg.81 Cd.19Te layers, measured at 2.1 kG, was 3.0 × 105 cm2/V-sec at 60 K, falling to 2 × 105 cm2/V-sec at 10 K. P-type layers were also grown, and are described in this paper.

Electron Holography of Semiconductor Junctions

1998 ◽  
Vol 4 (S2) ◽  
pp. 642-643
Author(s):  
M. R. McCartney ◽  
Jing Li
Keyword(s):  
Semiconductor Device ◽  
Quantitative Character ◽  
Electron Holography ◽  
Two Dimensional ◽  
Boron Doped ◽  
Strong Candidate ◽  
Voltage Contrast ◽  
P Type ◽  
Imaging Conditions

TEM has not traditionally contributed to characterization of semiconductor junctions, except for some intriguing results by Perovic, Hull and Alvis where highly doped layers gave contrast under very specific sample preparation and imaging conditions. Since electron holography is sensitive to the phase of the electron wavefront that has passed through the sample, it has the potential to provide voltage contrast. In principle, given its inherent two-dimensional and quantitative character, electron holography is a strong candidate for analysis of semiconductor device junctions.The sample for the work reported here was one of a group of test specimens fabricated at IBM for a dopant metrology round-robin comparison to evaluate various profiling methods. The substrate was <100> p-type silicon, boron-doped at 11-25 Ω-cm-1. The test structure was fabricated using low- temperature epitaxial growth and consisted of an abrupt p-n junction, formed by abutting 1020cm-3 doped regions of boron and phosphorus

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